Inventor
YEW TRI-RUNG
TW91 patents
⚠️ This page may combine multiple inventors who share the name “YEW TRI-RUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
49 patentsUS5801094ASep 1, 1998
Dual damascene process
UNITED MICROELECTRONICS CORP178 citations99
US6010931AJan 4, 2000
Planarization technique for DRAM cell capacitor electrode
UNITED MICROELECTRONICS CORP88 citations98
US6159845ADec 12, 2000
Method for manufacturing dielectric layer
UNITED MICROELECTRONICS CORP111 citations97
US6306722B1Oct 23, 2001
Method for fabricating shallow trench isolation structure
UNITED MICROELECTRONICS CORP53 citations96
US6265780B1Jul 24, 2001
Dual damascene structure for the wiring-line structures of multi-level interconnects in integrated circuit
UNITED MICROELECTRONICS CORP65 citations96
US6265313B1Jul 24, 2001
Method of manufacturing copper interconnect
UNITED MICROELECTRONICS CORP59 citations96
US6184142B1Feb 6, 2001
Process for low k organic dielectric film etch
UNITED MICROELECTRONICS CORP81 citations96
US6078492AJun 20, 2000
Structure of a capacitor in a semiconductor device having a self align contact window which has a slanted sidewall
UNITED MICROELECTRONICS CORP62 citations96
US5994181ANov 30, 1999
Method for forming a DRAM cell electrode
UNITED MICROELECTRONICS CORP57 citations96
US5990015ANov 23, 1999
Dual damascence process
UNITED MICROELECTRONICS CORP60 citations96
US5960299ASep 28, 1999
Method of fabricating a shallow-trench isolation structure in integrated circuit
UNITED MICROELECTRONICS CORP77 citations96
US5956598ASep 21, 1999
Method for fabricating a shallow-trench isolation structure with a rounded corner in integrated circuit
UNITED MICROELECTRONICS CORP63 citations96
US5753559AMay 19, 1998
Method for growing hemispherical grain silicon
UNITED MICROELECTRONICS CORP59 citations96
US6017817AJan 25, 2000
Method of fabricating dual damascene
UNITED MICROELECTRONICS CORP83 citations95
US5998251ADec 7, 1999
Process and structure for embedded DRAM
UNITED MICROELECTRONICS CORP68 citations95
US6291288B1Sep 18, 2001
Method of fabricating a thin and structurally-undefective dielectric structure for a storage capacitor in dynamic random-access memory
UNITED MICROELECTRONICS CORP26 citations93
US6191028B1Feb 20, 2001
Method of patterning dielectric
UNITED MICROELECTRONICS CORP30 citations93
US6159661ADec 12, 2000
Dual damascene process
UNITED MICROELECTRONICS CORP33 citations93
US6150251ANov 21, 2000
Method of fabricating gate
UNITED MICROELECTRONICS CORP25 citations93
US6146941ANov 14, 2000
Method for fabricating a capacitor in a semiconductor device
UNITED MICROELECTRONICS CORP21 citations93
US6133086AOct 17, 2000
Fabrication method of a tantalum pentoxide dielectric layer for a DRAM capacitor
UNITED MICROELECTRONICS CORP24 citations93
US6114200ASep 5, 2000
Method of fabricating a dynamic random access memory device
UNITED MICROELECTRONICS CORP32 citations93
US6084304AJul 4, 2000
Structure of metallization
UNITED MICROELECTRONICS CORP25 citations93
US6077769AJun 20, 2000
Method of fabricating a daul damascene structure
UNITED MICROELECTRONICS CORP46 citations93
US6069066AMay 30, 2000
Method of forming bonding pad
UNITED MICROELECTRONICS CORP23 citations93
US6060379AMay 9, 2000
Method of forming dual damascene structure
UNITED MICROELECTRONICS CORP19 citations93
US6027994AFeb 22, 2000
Method to fabricate a dual metal-damascene structure in a substrate
UNITED MICROELECTRONICS CORP28 citations93
US6025264AFeb 15, 2000
Fabricating method of a barrier layer
UNITED MICROELECTRONICS CORP32 citations93
US6001733ADec 14, 1999
Method of forming a dual damascene with dummy metal lines
UNITED MICROELECTRONICS CORP54 citations93
US5994183ANov 30, 1999
Method for forming charge storage structure
UNITED MICROELECTRONICS CORP49 citations93
US5930618AJul 27, 1999
Method of Making High-K Dielectrics for embedded DRAMS
UNITED MICROELECTRONICS CORP32 citations93
US6475865B1Nov 5, 2002
Method of fabricating semiconductor device
UNITED MICROELECTRONICS CORP36 citations92
US6254676B1Jul 3, 2001
Method for manufacturing metal oxide semiconductor transistor having raised source/drain
UNITED MICROELECTRONICS CORP28 citations92
US6251783B1Jun 26, 2001
Method of manufacturing shallow trench isolation
UNITED MICROELECTRONICS CORP20 citations92
US6235606B1May 22, 2001
Method of fabricating shallow trench isolation
UNITED MICROELECTRONICS CORP29 citations92
US6221712B1Apr 24, 2001
Method for fabricating gate oxide layer
UNITED MICROELECTRONICS CORP26 citations92
US6140192AOct 31, 2000
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP30 citations92
US6013579AJan 11, 2000
Self-aligned via process for preventing poison via formation
UNITED MICROELECTRONICS CORP20 citations92
US6001414ADec 14, 1999
Dual damascene processing method
UNITED MICROELECTRONICS CORP34 citations92
US6037206AMar 14, 2000
Method of fabricating a capacitor of a dynamic random access memory
UNITED MICROELECTRONICS CORP29 citations90
US6242334B1Jun 5, 2001
Multi-step spacer formation of semiconductor devices
UNITED MICROELECTRONICS CORP24 citations89
US6221746B1Apr 24, 2001
Method for forming a poly gate structure
UNITED MICROELECTRONICS CORP24 citations89
US10079277B2Sep 18, 2018
Method of fabricating metal-insulator-metal capacitor
UNITED MICROELECTRONICS CORP9 citations84
US6680248B2Jan 20, 2004
Method of forming dual damascene structure
UNITED MICROELECTRONICS CORP14 citations84
US6593223B1Jul 15, 2003
Method of forming dual damascene structure
UNITED MICROELECTRONICS CORP13 citations84
US6221744B1Apr 24, 2001
Method for forming a gate
UNITED MICROELECTRONICS CORP18 citations84
US6080660AJun 27, 2000
Via structure and method of manufacture
UNITED MICROELECTRONICS CORP16 citations84
US5981395ANov 9, 1999
Method of fabricating an unlanded metal via of multi-level interconnection
UNITED MICROELECTRONICS CORP19 citations84
US5976931ANov 2, 1999
Method for increasing capacitance
UNITED MICROELECTRONICS CORP15 citations82
(unassigned)
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