Inventor
NARDI FEDERICO
US30 patents
⚠️ This page may combine multiple inventors who share the name “NARDI FEDERICO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTERMOLECULAR INC
17 patentsUS9178000B1Nov 3, 2015
Resistive random access memory cells having shared electrodes with transistor devices
INTERMOLECULAR INC22 citations91
US9246094B2Jan 26, 2016
Stacked bi-layer as the low power switchable RRAM
INTERMOLECULAR INC8 citations84
US9246087B1Jan 26, 2016
Electron barrier height controlled interfaces of resistive switching layers in resistive random access memory cells
INTERMOLECULAR INC15 citations84
US9246091B1Jan 26, 2016
ReRAM cells with diffusion-resistant metal silicon oxide layers
INTERMOLECULAR INC14 citations84
US9224951B1Dec 29, 2015
Current-limiting electrodes
INTERMOLECULAR INC11 citations84
US9018037B1Apr 28, 2015
Vertical oxide-oxide interface for forming-free, low power and low variability RRAM devices
INTERMOLECULAR INC14 citations84
US9680092B2Jun 13, 2017
Current selectors formed using single stack structures
INTERMOLECULAR INC2 citations73
US9620205B2Apr 11, 2017
All around electrode for novel 3D RRAM applications
INTERMOLECULAR INC2 citations73
US9047940B2Jun 2, 2015
Resistive random access memory cells having variable switching characteristics
INTERMOLECULAR INC5 citations73
US8866118B2Oct 21, 2014
Morphology control of ultra-thin MeOx layer
INTERMOLECULAR INC4 citations73
US9000819B1Apr 7, 2015
Resistive switching schmitt triggers and comparators
INTERMOLECULAR INC2 citations63
US9786368B2Oct 10, 2017
Two stage forming of resistive random access memory cells
INTERMOLECULAR INC1 citations52
US9178140B2Nov 3, 2015
Morphology control of ultra-thin MeOx layer
INTERMOLECULAR INC0 citations52
US9054634B1Jun 9, 2015
Voltage controlling assemblies including variable resistance devices
INTERMOLECULAR INC1 citations52
US9012879B2Apr 21, 2015
Morphology control of ultra-thin MeOx layer
INTERMOLECULAR INC0 citations52
US8872152B2Oct 28, 2014
IL-free MIM stack for clean RRAM devices
INTERMOLECULAR INC0 citations52
US9245649B2Jan 26, 2016
Resistive switching sample and hold
INTERMOLECULAR INC0 citations40
SANDISK TECHNOLOGIES LLC
10 patentsUS10262730B1Apr 16, 2019
Multi-state and confined phase change memory with vertical cross-point structure
SANDISK TECHNOLOGIES LLC25 citations94
US10050194B1Aug 14, 2018
Resistive memory device including a lateral air gap around a memory element and method of making thereof
SANDISK TECHNOLOGIES LLC31 citations93
US10147876B1Dec 4, 2018
Phase change memory electrode with multiple thermal interfaces
SANDISK TECHNOLOGIES LLC23 citations92
US10374014B2Aug 6, 2019
Multi-state phase change memory device with vertical cross-point structure
SANDISK TECHNOLOGIES LLC4 citations84
US11101326B2Aug 24, 2021
Methods of forming a phase change memory with vertical cross-point structure
SANDISK TECHNOLOGIES LLC1 citations73
US10290348B1May 14, 2019
Write-once read-many amorphous chalcogenide-based memory
SANDISK TECHNOLOGIES LLC4 citations73
US10943952B2Mar 9, 2021
Threshold switch for memory
SANDISK TECHNOLOGIES LLC6 citations72
US11361829B2Jun 14, 2022
In-storage logic for hardware accelerators
SANDISK TECHNOLOGIES LLC0 citations62
US11088206B2Aug 10, 2021
Methods of forming a phase change memory with vertical cross-point structure
SANDISK TECHNOLOGIES LLC0 citations62
US11397790B2Jul 26, 2022
Vector matrix multiplication with 3D NAND
SANDISK TECHNOLOGIES LLC0 citations52
APPLIED MATERIALS INC
3 patentsUS11948630B2Apr 2, 2024
Two-terminal one-time programmable fuses for memory cells
APPLIED MATERIALS INC1 citations62
US11790989B2Oct 17, 2023
Soft reset for multi-level programming of memory cells in non-von neumann architectures
APPLIED MATERIALS INC0 citations61
US11017856B1May 25, 2021
Soft reset for multi-level programming of memory cells in non-Von Neumann architectures
APPLIED MATERIALS INC1 citations61