Inventor
LIN SHENG-HSUAN
TW45 patents
⚠️ This page may combine multiple inventors who share the name “LIN SHENG-HSUAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
41 patentsUS9831183B2Nov 28, 2017
Contact structure and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD493 citations98
US11348839B2May 31, 2022
Method of manufacturing semiconductor devices with multiple silicide regions
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9905670B2Feb 27, 2018
Bi-layer metal deposition in silicide formation
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9735050B2Aug 15, 2017
Composite contact plug structure and method of making same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10535748B2Jan 14, 2020
Method of forming a contact with a silicide region
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US11342225B2May 24, 2022
Barrier-free approach for forming contact plugs
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10504834B2Dec 10, 2019
Contact structure and the method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10276432B2Apr 30, 2019
Composite contact plug structure and method of making same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10079174B2Sep 18, 2018
Composite contact plug structure and method of making same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9984924B2May 29, 2018
Semiconductor device and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9966339B2May 8, 2018
Barrier structure for copper interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10756017B2Aug 25, 2020
Contact structure and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US11854874B2Dec 26, 2023
Metal contact structure and method of forming the same in a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US10985058B2Apr 20, 2021
Semiconductor device and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US9530736B2Dec 27, 2016
Semiconductor device and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12532721B2Jan 20, 2026
Barrier-free approach for forming contact plugs
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12328890B2Jun 10, 2025
Contact with a silicide region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218012B2Feb 4, 2025
Method of manufacturing semiconductor devices with multiple silicide regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12166078B2Dec 10, 2024
Contact structure for semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901229B2Feb 13, 2024
Barrier-free approach for forming contact plugs
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11810826B2Nov 7, 2023
Semiconductor devices with stacked silicide regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11411094B2Aug 9, 2022
Contact with a silicide region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11335774B2May 17, 2022
Contact structure for semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11195791B2Dec 7, 2021
Method for forming semiconductor contact structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12191199B2Jan 7, 2025
Contact metallization process
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US10964590B2Mar 30, 2021
Contact metallization process
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations60
US10825724B2Nov 3, 2020
Metal contact structure and method of forming the same in a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10504778B2Dec 10, 2019
Composite contact plug structure and method of making same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10269630B2Apr 23, 2019
Semiconductor device and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10263088B2Apr 16, 2019
Method for silicide formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10049925B2Aug 14, 2018
Metal-semiconductor contact structure with doped interlayer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10043885B2Aug 7, 2018
Bi-layer metal deposition in silicide formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9859390B2Jan 2, 2018
Method for silicide formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9666438B2May 30, 2017
Semiconductor device and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9620601B2Apr 11, 2017
Contact structures and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9466488B2Oct 11, 2016
Metal-semiconductor contact structure with doped interlayer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10269713B2Apr 23, 2019
Contact structure and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10163719B2Dec 25, 2018
Method of forming self-alignment contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US10050116B2Aug 14, 2018
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9818834B2Nov 14, 2017
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations50
US10840105B2Nov 17, 2020
Gate structure with insulating structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42
TAIWAN SEMICONDUCTOR MFG
4 patentsUS9230795B1Jan 5, 2016
Directional pre-clean in silicide and contact formation
TAIWAN SEMICONDUCTOR MFG24 citations94
US9368357B2Jun 14, 2016
Directional pre-clean in silicide and contact formation
TAIWAN SEMICONDUCTOR MFG4 citations73
US9076823B2Jul 7, 2015
Bi-layer metal deposition in silicide formation
TAIWAN SEMICONDUCTOR MFG4 citations73
US9397040B2Jul 19, 2016
Semiconductor device comprising metal plug having substantially convex bottom surface
TAIWAN SEMICONDUCTOR MFG0 citations52