Inventor
TSAI YAN-MING
TW25 patents
⚠️ This page may combine multiple inventors who share the name “TSAI YAN-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
23 patentsUS11348839B2May 31, 2022
Method of manufacturing semiconductor devices with multiple silicide regions
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9812451B2Nov 7, 2017
Field effect transistor contact with reduced contact resistance
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10535748B2Jan 14, 2020
Method of forming a contact with a silicide region
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US10515963B2Dec 24, 2019
Field effect transistor contact with reduced contact resistance
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10269799B2Apr 23, 2019
Field effect transistor contact with reduced contact resistance
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9520327B2Dec 13, 2016
Methods of forming low resistance contacts
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12328890B2Jun 10, 2025
Contact with a silicide region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218012B2Feb 4, 2025
Method of manufacturing semiconductor devices with multiple silicide regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12166078B2Dec 10, 2024
Contact structure for semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12107086B2Oct 1, 2024
Field effect transistor contact with reduced contact resistance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12046510B2Jul 23, 2024
Conductive feature formation and structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11810826B2Nov 7, 2023
Semiconductor devices with stacked silicide regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11411094B2Aug 9, 2022
Contact with a silicide region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11335774B2May 17, 2022
Contact structure for semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11289482B2Mar 29, 2022
Field effect transistor contact with reduced contact resistance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11177172B2Nov 16, 2021
Semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11081563B2Aug 3, 2021
Formation of silicide contacts in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11031286B2Jun 8, 2021
Conductive feature formation and structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12439625B2Oct 7, 2025
Semiconductor device structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12432977B2Sep 30, 2025
Semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12087642B2Sep 10, 2024
Selective dual silicide formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11676868B2Jun 13, 2023
Selective dual silicide formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US10483164B2Nov 19, 2019
Semiconductor structure and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52