P

Inventor

TSAI YAN-MING

TW25 patents
⚠️ This page may combine multiple inventors who share the name “TSAI YAN-MING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

23 patents
US11348839B2May 31, 2022

Method of manufacturing semiconductor devices with multiple silicide regions

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9812451B2Nov 7, 2017

Field effect transistor contact with reduced contact resistance

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10535748B2Jan 14, 2020

Method of forming a contact with a silicide region

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US10515963B2Dec 24, 2019

Field effect transistor contact with reduced contact resistance

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10269799B2Apr 23, 2019

Field effect transistor contact with reduced contact resistance

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9520327B2Dec 13, 2016

Methods of forming low resistance contacts

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US12328890B2Jun 10, 2025

Contact with a silicide region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12218012B2Feb 4, 2025

Method of manufacturing semiconductor devices with multiple silicide regions

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12166078B2Dec 10, 2024

Contact structure for semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12107086B2Oct 1, 2024

Field effect transistor contact with reduced contact resistance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12046510B2Jul 23, 2024

Conductive feature formation and structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11810826B2Nov 7, 2023

Semiconductor devices with stacked silicide regions

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11411094B2Aug 9, 2022

Contact with a silicide region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11335774B2May 17, 2022

Contact structure for semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11289482B2Mar 29, 2022

Field effect transistor contact with reduced contact resistance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11177172B2Nov 16, 2021

Semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11081563B2Aug 3, 2021

Formation of silicide contacts in semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11031286B2Jun 8, 2021

Conductive feature formation and structure

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12439625B2Oct 7, 2025

Semiconductor device structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12432977B2Sep 30, 2025

Semiconductor device and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12087642B2Sep 10, 2024

Selective dual silicide formation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US11676868B2Jun 13, 2023

Selective dual silicide formation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US10483164B2Nov 19, 2019

Semiconductor structure and method for manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

TAIWAN SEMICONDUCTOR MFG

2 patents