Inventor
CHENG YA-YI
TW14 patents
Patents
14 patentsUS10847411B2Nov 24, 2020
Conductive feature formation and structure
TAIWAN SEMICONDUCTOR MFG CO LTD12 citations84
US10535748B2Jan 14, 2020
Method of forming a contact with a silicide region
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US10475702B2Nov 12, 2019
Conductive feature formation and structure using bottom-up filling deposition
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12328890B2Jun 10, 2025
Contact with a silicide region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11411094B2Aug 9, 2022
Contact with a silicide region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12482705B2Nov 25, 2025
Conductive feature formation and structure using bottom-up filling deposition
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12417945B2Sep 16, 2025
Contact features of semiconductor device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11532503B2Dec 20, 2022
Conductive feature structure including a blocking region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12538776B2Jan 27, 2026
Methods for selectively removing material
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12308292B2May 20, 2025
Methods of forming semiconductor device structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12237218B2Feb 25, 2025
Method of fabricating contact structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12272600B2Apr 8, 2025
Contact features of semiconductor device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US10943823B2Mar 9, 2021
Conductive feature formation and structure using bottom-up filling deposition
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US10804140B2Oct 13, 2020
Interconnect formation and structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51