P

Inventor

Singh Sahil Preet

TW37 patents

Patents

37 patents
US11309000B2Apr 19, 2022

Systems and methods for controlling power management operations in a memory device

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10734066B2Aug 4, 2020

Static random access memory with write assist circuit

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9922700B2Mar 20, 2018

Memory read stability enhancement with short segmented bit line architecture

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9911473B1Mar 6, 2018

Circuit with self-adjust pre-charged global data line

TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US10991423B2Apr 27, 2021

Flying and twisted bit line architecture for dual-port static random-access memory (DP SRAM)

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations82
US11763863B2Sep 19, 2023

Systems and methods for controlling power management operations in a memory device

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US12165739B2Dec 10, 2024

Systems and methods for controlling power management operations in a memory device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11423978B2Aug 23, 2022

Write assist for a memory device and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11361818B2Jun 14, 2022

Memory device with global and local latches

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10971220B2Apr 6, 2021

Write assist for a memory device and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10535658B2Jan 14, 2020

Memory device with reduced-resistance interconnect

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10529415B2Jan 7, 2020

Write assist for a memory device and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10510403B2Dec 17, 2019

Memory read stability enhancement with short segmented bit line architecture

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10319435B2Jun 11, 2019

Write assist for a memory device and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10153038B2Dec 11, 2018

Memory read stability enhancement with short segmented bit line architecture

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10134737B2Nov 20, 2018

Memory device with reduced-resistance interconnect

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10510401B2Dec 17, 2019

Semiconductor memory device using shared data line for read/write operation

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10790015B2Sep 29, 2020

Flying and twisted bit line architecture for dual-port static random-access memory (DP SRAM)

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US9928899B2Mar 27, 2018

Flying and twisted bit line architecture for dual-port static random-access memory (DP SRAM)

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12217792B2Feb 4, 2025

Memory circuit and method of operating same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12586635B2Mar 24, 2026

Static random access memory with write assist circuit

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12512150B2Dec 30, 2025

Memory device with global and local latches

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12272427B2Apr 8, 2025

Semiconductor device including first and second clock generators

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12074156B2Aug 27, 2024

Memory array circuit and method of manufacturing same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11948627B2Apr 2, 2024

Static random access memory with write assist circuit

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11922998B2Mar 5, 2024

Memory device with global and local latches

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11830544B2Nov 28, 2023

Write assist for a memory device and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11423977B2Aug 23, 2022

Static random access memory with write assist circuit

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11145655B2Oct 12, 2021

Memory device with reduced-resistance interconnect

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11120868B2Sep 14, 2021

Semiconductor memory device using shared data line for read/write operation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10964683B2Mar 30, 2021

Memory array circuit and method of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10157666B2Dec 18, 2018

Flying and twisted bit line architecture for dual-port static random-access memory (DP SRAM)

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10854282B2Dec 1, 2020

Memory read stability enhancement with short segmented bit line architecture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10832765B2Nov 10, 2020

Variation tolerant read assist circuit for SRAM

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10127951B2Nov 13, 2018

Memory device with reduced-resistance interconnect

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US10037796B2Jul 31, 2018

Generating a collapsed VDD using a write-assist column to decrease a write voltage

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US10490267B2Nov 26, 2019

Flying and twisted bit line architecture for dual-port static random-access memory (DP SRAM)

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51