Inventor
Singh Sahil Preet
TW37 patents
Patents
37 patentsUS11309000B2Apr 19, 2022
Systems and methods for controlling power management operations in a memory device
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10734066B2Aug 4, 2020
Static random access memory with write assist circuit
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9922700B2Mar 20, 2018
Memory read stability enhancement with short segmented bit line architecture
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9911473B1Mar 6, 2018
Circuit with self-adjust pre-charged global data line
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US10991423B2Apr 27, 2021
Flying and twisted bit line architecture for dual-port static random-access memory (DP SRAM)
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations82
US11763863B2Sep 19, 2023
Systems and methods for controlling power management operations in a memory device
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations75
US12165739B2Dec 10, 2024
Systems and methods for controlling power management operations in a memory device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11423978B2Aug 23, 2022
Write assist for a memory device and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11361818B2Jun 14, 2022
Memory device with global and local latches
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10971220B2Apr 6, 2021
Write assist for a memory device and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10535658B2Jan 14, 2020
Memory device with reduced-resistance interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10529415B2Jan 7, 2020
Write assist for a memory device and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10510403B2Dec 17, 2019
Memory read stability enhancement with short segmented bit line architecture
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10319435B2Jun 11, 2019
Write assist for a memory device and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10153038B2Dec 11, 2018
Memory read stability enhancement with short segmented bit line architecture
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10134737B2Nov 20, 2018
Memory device with reduced-resistance interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10510401B2Dec 17, 2019
Semiconductor memory device using shared data line for read/write operation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10790015B2Sep 29, 2020
Flying and twisted bit line architecture for dual-port static random-access memory (DP SRAM)
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US9928899B2Mar 27, 2018
Flying and twisted bit line architecture for dual-port static random-access memory (DP SRAM)
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12217792B2Feb 4, 2025
Memory circuit and method of operating same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12586635B2Mar 24, 2026
Static random access memory with write assist circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12512150B2Dec 30, 2025
Memory device with global and local latches
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12272427B2Apr 8, 2025
Semiconductor device including first and second clock generators
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12074156B2Aug 27, 2024
Memory array circuit and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11948627B2Apr 2, 2024
Static random access memory with write assist circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11922998B2Mar 5, 2024
Memory device with global and local latches
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11830544B2Nov 28, 2023
Write assist for a memory device and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11423977B2Aug 23, 2022
Static random access memory with write assist circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11145655B2Oct 12, 2021
Memory device with reduced-resistance interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11120868B2Sep 14, 2021
Semiconductor memory device using shared data line for read/write operation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10964683B2Mar 30, 2021
Memory array circuit and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10157666B2Dec 18, 2018
Flying and twisted bit line architecture for dual-port static random-access memory (DP SRAM)
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10854282B2Dec 1, 2020
Memory read stability enhancement with short segmented bit line architecture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10832765B2Nov 10, 2020
Variation tolerant read assist circuit for SRAM
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10127951B2Nov 13, 2018
Memory device with reduced-resistance interconnect
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US10037796B2Jul 31, 2018
Generating a collapsed VDD using a write-assist column to decrease a write voltage
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US10490267B2Nov 26, 2019
Flying and twisted bit line architecture for dual-port static random-access memory (DP SRAM)
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51