Inventor
KIRSCH HOWARD C
US98 patents
⚠️ This page may combine multiple inventors who share the name “KIRSCH HOWARD C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MOTOROLA INC
19 patentsUS5212110AMay 18, 1993
Method for forming isolation regions in a semiconductor device
MOTOROLA INC123 citations98
US5739564AApr 14, 1998
Semiconductor device having a static-random-access memory cell
MOTOROLA INC114 citations96
US5543339AAug 6, 1996
Process for forming an electrically programmable read-only memory cell
MOTOROLA INC61 citations96
US5496756AMar 5, 1996
Method for forming a nonvolatile memory device
MOTOROLA INC117 citations96
US5416736AMay 16, 1995
Vertical field-effect transistor and a semiconductor memory cell having the transistor
MOTOROLA INC65 citations96
US5408130AApr 18, 1995
Interconnection structure for conductive layers
MOTOROLA INC86 citations96
US5364810ANov 15, 1994
Methods of forming a vertical field-effect transistor and a semiconductor memory cell
MOTOROLA INC83 citations96
US5286674AFeb 15, 1994
Method for forming a via structure and semiconductor device having the same
MOTOROLA INC86 citations96
US5272117ADec 21, 1993
Method for planarizing a layer of material
MOTOROLA INC94 citations96
US5266512ANov 30, 1993
Method for forming a nested surface capacitor
MOTOROLA INC103 citations96
US5262352ANov 16, 1993
Method for forming an interconnection structure for conductive layers
MOTOROLA INC92 citations96
US5488579AJan 30, 1996
Three-dimensionally integrated nonvolatile SRAM cell and process
MOTOROLA INC71 citations95
US5616941AApr 1, 1997
Electrically programmable read-only memory cell
MOTOROLA INC24 citations93
US5445107AAug 29, 1995
Semiconductor device and method of formation
MOTOROLA INC32 citations93
US5432731AJul 11, 1995
Ferroelectric memory cell and method of sensing and writing the polarization state thereof
MOTOROLA INC40 citations93
US5118639AJun 2, 1992
Process for the formation of elevated source and drain structures in a semiconductor device
MOTOROLA INC49 citations93
US5095347AMar 10, 1992
Plural transistor silicon on insulator structure with shared electrodes
MOTOROLA INC51 citations93
US5246537ASep 21, 1993
Method of forming recessed oxide isolation
MOTOROLA INC25 citations92
US5240558AAug 31, 1993
Method for forming a semiconductor device
MOTOROLA INC37 citations92
MICRON TECHNOLOGY INC
16 patentsUS6734482B1May 11, 2004
Trench buried bit line memory devices
MICRON TECHNOLOGY INC112 citations99
US6803826B2Oct 12, 2004
Delay-locked loop circuit and method using a ring oscillator and counter-based delay
MICRON TECHNOLOGY INC94 citations97
US7345937B2Mar 18, 2008
Open digit line array architecture for a memory array
MICRON TECHNOLOGY INC33 citations96
US6806137B2Oct 19, 2004
Trench buried bit line memory devices and methods thereof
MICRON TECHNOLOGY INC69 citations96
US6759911B2Jul 6, 2004
Delay-locked loop circuit and method using a ring oscillator and counter-based delay
MICRON TECHNOLOGY INC58 citations95
US7354812B2Apr 8, 2008
Multiple-depth STI trenches in integrated circuit fabrication
MICRON TECHNOLOGY INC29 citations93
US6924686B2Aug 2, 2005
Synchronous mirror delay (SMD) circuit and method including a counter and reduced size bi-directional delay line
MICRON TECHNOLOGY INC25 citations93
US6888769B2May 3, 2005
Method and circuit for reducing DRAM refresh power by reducing access transistor sub threshold leakage
MICRON TECHNOLOGY INC24 citations93
US6812799B2Nov 2, 2004
Synchronous mirror delay (SMD) circuit and method including a ring oscillator for timing coarse and fine delay intervals
MICRON TECHNOLOGY INC39 citations93
US6727740B2Apr 27, 2004
Synchronous mirror delay (SMD) circuit and method including a ring oscillator for timing coarse and fine delay intervals
MICRON TECHNOLOGY INC34 citations93
US6621316B1Sep 16, 2003
Synchronous mirror delay (SMD) circuit and method including a counter and reduced size bi-directional delay line
MICRON TECHNOLOGY INC24 citations93
US7898857B2Mar 1, 2011
Memory structure having volatile and non-volatile memory portions
MICRON TECHNOLOGY INC17 citations92
US7512025B2Mar 31, 2009
Open digit line array architecture for a memory array
MICRON TECHNOLOGY INC12 citations92
US7365384B2Apr 29, 2008
Trench buried bit line memory devices and methods thereof
MICRON TECHNOLOGY INC25 citations92
US7939394B2May 10, 2011
Multiple-depth STI trenches in integrated circuit fabrication
MICRON TECHNOLOGY INC9 citations84
US7200053B2Apr 3, 2007
Level shifter for low voltage operation
MICRON TECHNOLOGY INC11 citations84
VANGUARD INT SEMICONDUCT CORP
6 patentsUS6057573AMay 2, 2000
Design for high density memory with relaxed metal pitch
VANGUARD INT SEMICONDUCT CORP209 citations99
US5933725AAug 3, 1999
Word line resistance reduction method and design for high density memory with relaxed metal pitch
VANGUARD INT SEMICONDUCT CORP49 citations96
US5821142AOct 13, 1998
Method for forming a capacitor with a multiple pillar structure
VANGUARD INT SEMICONDUCT CORP35 citations93
US6091264AJul 18, 2000
Schmitt trigger input stage
VANGUARD INT SEMICONDUCT CORP23 citations92
US6320417B1Nov 20, 2001
Multiple-bit, current mode data bus
VANGUARD INT SEMICONDUCT CORP16 citations91
US5786709AJul 28, 1998
Integrated circuit output driver incorporating power distribution noise suppression circuitry
VANGUARD INT SEMICONDUCT CORP21 citations90
AT & T BELL LAB
2 patentsAMERICAN TELEPHONE & TELEGRAPH
2 patentsBELL TELEPHONE LABOR INC
1 patentTHOMSON COMPONENTS MOSTEK CORP
1 patentJUENGLING WERNER
1 patentKIM TAE H
1 patentKIM TAE
1 patentShowing the top 50 of 98 patents by PatentIndex Score.