Inventor
YEN CHENG-TYNG
TW33 patents
⚠️ This page may combine multiple inventors who share the name “YEN CHENG-TYNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HESTIA POWER INC
12 patentsUS9368650B1Jun 14, 2016
SiC junction barrier controlled schottky rectifier
HESTIA POWER INC21 citations92
US9246016B1Jan 26, 2016
Silicon carbide semiconductor device
HESTIA POWER INC11 citations83
US10483389B2Nov 19, 2019
Silicon carbide semiconductor device
HESTIA POWER INC6 citations72
US10418476B2Sep 17, 2019
Silicon carbide semiconductor device
HESTIA POWER INC3 citations72
US10020368B2Jul 10, 2018
Silicon carbide semiconductor element and manufacturing method thereof
HESTIA POWER INC2 citations71
US9761703B1Sep 12, 2017
Wide bandgap semiconductor device with adjustable voltage level
HESTIA POWER INC3 citations71
US9373713B2Jun 21, 2016
Silicon carbide semiconductor device and method of manufacture thereof
HESTIA POWER INC4 citations71
US10396774B2Aug 27, 2019
Intelligent power module operable to be driven by negative gate voltage
HESTIA POWER INC1 citations62
US9018640B1Apr 28, 2015
Silicon carbide power device equipped with termination structure
HESTIA POWER INC2 citations62
US11222971B2Jan 11, 2022
Silicon carbide semiconductor device integrating clamper circuit for clamping voltage
HESTIA POWER INC0 citations50
US10497777B2Dec 3, 2019
Semiconductor power device
HESTIA POWER INC0 citations41
US9685552B2Jun 20, 2017
Silicon carbide field effect transistor
HESTIA POWER INC0 citations40
IND TECH RES INST
8 patentsUS8841721B2Sep 23, 2014
Stepped trench MOSFET and method of fabricating the same
IND TECH RES INST16 citations84
US8766279B1Jul 1, 2014
SiC-based trench-type schottky device
IND TECH RES INST15 citations82
US8026562B2Sep 27, 2011
Magnetic memory element utilizing spin transfer switching
IND TECH RES INST5 citations73
US9625538B2Apr 18, 2017
Magnetic field sensors and sensing circuits
IND TECH RES INST3 citations72
US9209293B2Dec 8, 2015
Integrated device having MOSFET cell array embedded with barrier Schottky diode
IND TECH RES INST3 citations62
US8878327B2Nov 4, 2014
Schottky barrier device having a plurality of double-recessed trenches
IND TECH RES INST2 citations62
US7829964B2Nov 9, 2010
Magnetic memory element utilizing spin transfer switching
IND TECH RES INST5 citations62
US8956963B2Feb 17, 2015
Schottky barrier diode and fabricating method thereof
IND TECH RES INST1 citations48
Fast SiC Semiconductor Incorporated
8 patentsUS11018228B2May 25, 2021
Silicon carbide semiconductor device
Fast SiC Semiconductor Incorporated3 citations72
US11489521B2Nov 1, 2022
Power transistor module and controlling method thereof
Fast SiC Semiconductor Incorporated2 citations70
US11195922B2Dec 7, 2021
Silicon carbide semiconductor device
Fast SiC Semiconductor Incorporated1 citations61
US12261594B2Mar 25, 2025
Cascode diode circuit
Fast SiC Semiconductor Incorporated0 citations60
US11888056B2Jan 30, 2024
Silicon carbide MOS-gated semiconductor device
Fast SiC Semiconductor Incorporated0 citations51
US12495576B2Dec 9, 2025
Silicon carbide semiconductor device
Fast SiC Semiconductor Incorporated0 citations49
US12419089B2Sep 16, 2025
Silicon carbide semiconductor device
Fast SiC Semiconductor Incorporated0 citations49
US11190181B2Nov 30, 2021
Power transistor module and controlling method thereof
Fast SiC Semiconductor Incorporated0 citations49