Inventor
AKARVARDAR KEREM
TW18 patents
⚠️ This page may combine multiple inventors who share the name “AKARVARDAR KEREM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
10 patentsUS11581039B2Feb 14, 2023
Methods of controlling PCRAM devices in single-level-cell (SLC) and multi-level-cell (MLC) modes and a controller for performing the same methods
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations85
US11942146B2Mar 26, 2024
Methods of controlling PCRAM devices in single-level-cell (SLC) and multi-level-cell (MLC) modes and a controller for performing the same methods
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11238906B2Feb 1, 2022
Series of parallel sensing operations for multi-level cells
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US12437195B2Oct 7, 2025
Systems and methods for pipelined heterogeneous dataflow for artificial intelligence accelerators
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12272420B2Apr 8, 2025
Series of parallel sensing operations for multi-level cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12144268B2Nov 12, 2024
Semiconductor structure and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11735235B2Aug 22, 2023
Series of parallel sensing operations for multi-level cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11901004B2Feb 13, 2024
Memory array, memory structure and operation method of memory array
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12469535B2Nov 11, 2025
Multilevel non-volatile memory device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12210756B2Jan 28, 2025
Memory system, operating method and controller
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
MASZARA WITOLD P
2 patentsGLOBALFOUNDRIES INC
2 patentsUS8853019B1Oct 7, 2014
Methods of forming a semiconductor device with a nanowire channel structure by performing an anneal process
GLOBALFOUNDRIES INC7 citations83
US9614058B2Apr 4, 2017
Methods of forming low defect replacement fins for a FinFET semiconductor device and the resulting devices
GLOBALFOUNDRIES INC1 citations51