Inventor
MIKAGI KAORU
JP26 patents
⚠️ This page may combine multiple inventors who share the name “MIKAGI KAORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
21 patentsUS5595937AJan 21, 1997
Method for fabricating semiconductor device with interconnections buried in trenches
NEC CORP140 citations98
US5899720AMay 4, 1999
Process of fabricating salicide structure from high-purity reproducible cobalt layer without sacrifice of leakage current and breakdown voltage of P-N junction
NEC CORP85 citations96
US7793818B2Sep 14, 2010
Semiconductor device, manufacturing method and apparatus for the same
NEC CORP15 citations92
US7611041B2Nov 3, 2009
Semiconductor device, manufacturing method and apparatus for the same
NEC CORP19 citations92
US7282432B2Oct 16, 2007
Semiconductor device, manufacturing method and apparatus for the same
NEC CORP16 citations92
US6969915B2Nov 29, 2005
Semiconductor device, manufacturing method and apparatus for the same
NEC CORP26 citations92
US6383911B2May 7, 2002
Semiconductor device and method for making the same
NEC CORP17 citations92
US6284662B1Sep 4, 2001
Method of forming a cobalt silicide layer by use of a TEOS through oxide film for ion-implantation process
NEC CORP19 citations92
US6274923B1Aug 14, 2001
Semiconductor device and method for making the same
NEC CORP30 citations92
US6232227B1May 15, 2001
Method for making semiconductor device
NEC CORP30 citations92
US6153507ANov 28, 2000
Method of fabricating semiconductor device providing effective resistance against metal layer oxidation and diffusion
NEC CORP38 citations92
US6107096AAug 22, 2000
Method of fabricating a salicide-structured MOS semiconductor device having a cobalt disilicied film
NEC CORP21 citations92
US5539256AJul 23, 1996
Semiconductor device having an interconnection of a laminate structure and a method for manufacturing the same
NEC CORP42 citations92
US5502005AMar 26, 1996
Production method of semiconductor device having a wiring layer containing gold
NEC CORP23 citations92
US6274932B1Aug 14, 2001
Semiconductor device having metal interconnection comprising metal silicide and four conductive layers
NEC CORP15 citations84
US6413807B1Jul 2, 2002
Semiconductor device having silicide films on a gate electrode and a diffusion layer and manufacturing method thereof
NEC CORP13 citations74
US5751067AMay 12, 1998
Compact semiconductor device having excellent electrical characteristics and long time reliability
NEC CORP12 citations74
US6114765ASep 5, 2000
C49-structured tungsten-containing titanium salicide structure and method of forming the same
NEC CORP9 citations73
US6069045AMay 30, 2000
Method of forming C49-structure tungsten-containing titanium salicide structure
NEC CORP5 citations73
US5880505AMar 9, 1999
C49-structured tungsten-containing titanium salicide structure
NEC CORP11 citations73
US6548421B1Apr 15, 2003
Method for forming a refractory-metal-silicide layer in a semiconductor device
NEC CORP4 citations62
NEC ELECTRONICS CORP
5 patentsUS6566254B1May 20, 2003
Method for forming a silicide film on gate electrodes and diffusion layers of MOS transistors
NEC ELECTRONICS CORP21 citations92
US7170172B2Jan 30, 2007
Semiconductor device having a roughened surface
NEC ELECTRONICS CORP14 citations83
US7560372B2Jul 14, 2009
Process for making a semiconductor device having a roughened surface
NEC ELECTRONICS CORP5 citations73
US6989328B2Jan 24, 2006
Method of manufacturing semiconductor device having damascene interconnection
NEC ELECTRONICS CORP2 citations62
US6569766B1May 27, 2003
Method for forming a silicide of metal with a high melting point in a semiconductor device
NEC ELECTRONICS CORP5 citations62