Inventor

CHOI JEONG-HYUK

KR64 patents

⚠️ This page may combine multiple inventors who share the name “CHOI JEONG-HYUK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHOI JEONG-HYUK

SAMSUNG ELECTRONICS CO LTD

Nonvolative semiconductor memory device with high impurity concentration under field oxide layer

Non-volatile memory device and method for operating and fabricating the same

Flash memory device

Method of programming NAND-type flash memory

Method for programming NAND-type flash memory device using bulk bias

Method for manufacturing nonvolatile memory device using self-aligned source process

Nonvolatile memory device and operating method thereof

Structure nonvolatile semiconductor memory cell array and method for fabricating same

Nonvolatile semiconductor memory device

Nonvolatile memory device having bulk bias contact structure in cell array region

Floating trap type nonvolatile memory device and method of fabricating the same

Method for fabricating flash memory device and flash memory device fabricated thereby

Nonvolatile memory device and method for manufacturing the same

Method for manufacturing NOR-type flash memory device

Methods of forming integrated circuits containing high and low voltage field effect transistors therein

Manufacturing method of nonvolatile memory

Nonvolatile integrated circuit memory devices having ground interconnect lattices with reduced lateral dimensions

Flash memory devices having a sloped trench isolation structure

Memory device and fabrication method thereof

Methods of forming nonvolatile integrated circuit memory devices having high capacitive coupling ratios

Integrated circuit memory devices having wide and narrow channel stop layers

Nonvolatile memory device and manufacturing method thereof

Non-volatile semiconductor memory device and method for manufacturing the same

Fuse element for a semiconductor memory device

Method of fabricating cell of flash memory device

Method for manufacturing nonvolatile semiconductor memory device

Method of making a non-volatile floating gate memory device with peripheral transistor

Floating trap type nonvolatile memory device and method of fabricating the same

Nonvolatile semiconductor integrated circuit devices and fabrication methods thereof

Nonviolatile memory device having improved threshold voltages in erasing and programming operations

Flash-type nonvolatile semiconductor memory devices for preventing overerasure

Nonvolatile memory devices having control electrodes configured to inhibit parasitic coupling capacitance

Semiconductor device and related fabrication method

Memory device and fabrication method thereof

Two-bit charge trap nonvolatile memory device and methods of operating and fabrication the same

Cells of nonvolatile memory device with high inter-layer dielectric constant

Nonvolatile memory device and method for manufacturing the same

Method for manufacturing CMOS devices having transistors with mutually different punch-through voltage characteristics

Structure nonvolatile semiconductor memory cell array and method for fabricating same

CMOS device and method for manufacturing the same

Circuit and method of erasing a nonvolatile semiconductor memory

Nonvolatile integrated circuit memory devices having ground interconnect lattices with reduced lateral dimensions

Nonvolatile memory device and manufacturing method thereof

High voltage transistor of semiconductor memory devices

Method for manufacturing nonvolatile memory device capable of preventing damage to side walls of stacked gate and active region

Semiconductor device including impurity regions having different cross-sectional shapes

Memory device and fabrication method thereof

Semiconductor memory devices and methods for forming the same

Method of fabricating cell of nonvolatile memory device with floating gate

SAMSUNG ELECTRIC

Integrated circuit fuse programming and reading circuits