Inventor
CHEN YEN-HSING
TW24 patents
⚠️ This page may combine multiple inventors who share the name “CHEN YEN-HSING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
22 patentsUS11508818B2Nov 22, 2022
Semiconductor device with strain relaxed layer
UNITED MICROELECTRONICS CORP2 citations72
US10366991B1Jul 30, 2019
Semiconductor device and manufacturing method thereof
UNITED MICROELECTRONICS CORP2 citations72
US9680022B1Jun 13, 2017
Semiconductor device having silicon-germanium layer on fin and method for manufacturing the same
UNITED MICROELECTRONICS CORP2 citations72
US9373705B1Jun 21, 2016
Manufacturing method of a fin-shaped field effect transistor and a device thereof
UNITED MICROELECTRONICS CORP3 citations72
US12224339B2Feb 11, 2025
High electron mobility transistor
UNITED MICROELECTRONICS CORP0 citations62
US12205905B2Jan 21, 2025
Semiconductor structure
UNITED MICROELECTRONICS CORP0 citations62
US12159930B2Dec 3, 2024
High electron mobility transistor and method of forming the same
UNITED MICROELECTRONICS CORP0 citations62
US12046640B2Jul 23, 2024
Semiconductor device with strain relaxed layer
UNITED MICROELECTRONICS CORP0 citations62
US12046639B2Jul 23, 2024
Semiconductor device with strain relaxed layer
UNITED MICROELECTRONICS CORP0 citations62
US11955519B2Apr 9, 2024
Semiconductor device with strain relaxed layer
UNITED MICROELECTRONICS CORP0 citations62
US11695067B2Jul 4, 2023
High electron mobility transistor and fabrication method thereof
UNITED MICROELECTRONICS CORP0 citations62
US11664426B2May 30, 2023
Semiconductor device with strain relaxed layer
UNITED MICROELECTRONICS CORP0 citations62
US11616135B2Mar 28, 2023
High electron mobility transistor and method of forming the same
UNITED MICROELECTRONICS CORP0 citations62
US11563088B2Jan 24, 2023
Semiconductor device with strain relaxed layer
UNITED MICROELECTRONICS CORP0 citations62
US11557666B2Jan 17, 2023
High electron mobility transistor and fabrication method thereof
UNITED MICROELECTRONICS CORP0 citations62
US11355626B2Jun 7, 2022
High electron mobility transistor
UNITED MICROELECTRONICS CORP0 citations62
US11257939B2Feb 22, 2022
High electron mobility transistor
UNITED MICROELECTRONICS CORP1 citations62
US12369371B2Jul 22, 2025
High electron mobility transistor and method for fabricating the same
UNITED MICROELECTRONICS CORP1 citations59
US9899498B2Feb 20, 2018
Semiconductor device having silicon-germanium layer on fin and method for manufacturing the same
UNITED MICROELECTRONICS CORP1 citations51
US9660086B2May 23, 2017
Fin-shaped field effect transistor
UNITED MICROELECTRONICS CORP0 citations51
US10644131B2May 5, 2020
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations47
US10388756B2Aug 20, 2019
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations47