Inventor

YANG TSUNG-MU

TW22 patents

⚠️ This page may combine multiple inventors who share the name “YANG TSUNG-MU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANG TSUNG-MU

UNITED MICROELECTRONICS CORP

Method for fabricating cap layer on an epitaxial layer

Semiconductor device with strain relaxed layer

High electron mobility transistor

Semiconductor structure

High electron mobility transistor and method of forming the same

Semiconductor device with strain relaxed layer

Semiconductor device with strain relaxed layer

Semiconductor device with strain relaxed layer

High electron mobility transistor and fabrication method thereof

Semiconductor device with strain relaxed layer

High electron mobility transistor and method of forming the same

Semiconductor device with strain relaxed layer

High electron mobility transistor and fabrication method thereof

High electron mobility transistor

High electron mobility transistor

Method for fabricating semiconductor device, and semiconductor device made thereby

High electron mobility transistor and method for fabricating the same

Semiconductor device having a cap layer with V-shape

Method of forming FinFET device

FinFET device and method of forming the same

Method for fabricating semiconductor device

ECHEM SOLUTIONS CORP

Masking layer formed by applying developable photosensitive resin compositions on panel structure