P

Inventor

LAI WEI-HAN

TW55 patents
⚠️ This page may combine multiple inventors who share the name “LAI WEI-HAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

47 patents
US9921480B2Mar 20, 2018

Extreme ultraviolet photoresist

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9459536B1Oct 4, 2016

Negative tone developer composition for extreme ultraviolet lithography

TAIWAN SEMICONDUCTOR MFG CO LTD14 citations84
US9581908B2Feb 28, 2017

Photoresist and method

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US11935757B2Mar 19, 2024

Method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11422465B2Aug 23, 2022

Extreme ultraviolet photoresist with high-efficiency electron transfer

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11269256B2Mar 8, 2022

Underlayer material for photoresist

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11106138B2Aug 31, 2021

Lithography process and material for negative tone development

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10698317B2Jun 30, 2020

Underlayer material for photoresist

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10520813B2Dec 31, 2019

Extreme ultraviolet photoresist with high-efficiency electron transfer

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10163648B2Dec 25, 2018

Method of semiconductor device fabrication having application of material with cross-linkable component

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10163632B2Dec 25, 2018

Material composition and process for substrate modification

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10095113B2Oct 9, 2018

Photoresist and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10056256B2Aug 21, 2018

Method of priming photoresist before application of a shrink material in a lithography process

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9958779B2May 1, 2018

Photoresist additive for outgassing reduction and out-of-band radiation absorption

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US11955336B2Apr 9, 2024

Method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11728161B2Aug 15, 2023

Spin on carbon composition and method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11476108B2Oct 18, 2022

Spin on carbon composition and method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10365561B2Jul 30, 2019

Photoresist and method

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US9488913B2Nov 8, 2016

Photoresist having decreased outgassing

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12300507B2May 13, 2025

Method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12191147B2Jan 7, 2025

Coating composition for photolithography

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12189296B2Jan 7, 2025

Lithography process and material for negative tone development

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11809080B2Nov 7, 2023

Extreme ultraviolet photoresist with high-efficiency electron transfer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11796918B2Oct 24, 2023

Underlayer material for photoresist

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11626293B2Apr 11, 2023

Method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11295961B2Apr 5, 2022

Method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11143963B2Oct 12, 2021

Negative tone developer for extreme ultraviolet lithography

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11073763B2Jul 27, 2021

Photoresist and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11003076B2May 11, 2021

Extreme ultraviolet photoresist and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12347683B2Jul 1, 2025

Method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12189287B2Jan 7, 2025

Photoresist composition and method of forming photoresist pattern

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12148610B2Nov 19, 2024

Spin on carbon composition and method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12074027B2Aug 27, 2024

Underlayer of multilayer structure and methods of use thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11714355B2Aug 1, 2023

Photoresist composition and method of forming photoresist pattern

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11550220B2Jan 10, 2023

Negative tone photoresist for EUV lithography

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12578641B2Mar 17, 2026

Photoresist and method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12476107B2Nov 18, 2025

Method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12504693B2Dec 23, 2025

Photoresist composition and method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12134690B2Nov 5, 2024

Photoresist composition and method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10802402B2Oct 13, 2020

Material composition and process for substrate modification

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10520820B2Dec 31, 2019

Negative tone developer for extreme ultraviolet lithography

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10401728B2Sep 3, 2019

Extreme ultraviolet photoresist and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10042252B2Aug 7, 2018

Extreme ultraviolet photoresist and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9810990B2Nov 7, 2017

Chemical treatment for lithography improvement in a negative tone development process

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12566374B2Mar 3, 2026

Photoresist composition and method of manufacturing semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10514603B2Dec 24, 2019

Photoresist and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10312108B2Jun 4, 2019

Method for forming semiconductor structure using modified resist layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

ACOUSTICSHEEP LLC

1 patent

ADVANCED SEMICONDUCTOR ENG

1 patent

TAIWAN SEMICONDUCTOR MFG

1 patent

Showing the top 50 of 55 patents by PatentIndex Score.