Inventor

HONG JIAQI

CN2 patents

Patents

2 patents

US12581724B2Mar 17, 2026

Method for manufacturing source/drain epitaxial layer of FDSOI MOSFET

SHANGHAI HUALI INTEGRATED CIRCUIT CORP0 citations46

US12308232B2May 20, 2025

Epitaxial growth method for FDSOI hybrid region

SHANGHAI HUALI INTEGRATED CIRCUIT CORP0 citations46