Inventor
CHIEN CHAO-HSIN
TW13 patents
Patents
13 patentsUS9496259B2Nov 15, 2016
FinFET semiconductor device having fins with stronger structural strength
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations83
US9837538B2Dec 5, 2017
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10971629B2Apr 6, 2021
Self-aligned unsymmetrical gate (SAUG) FinFET and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations64
US10453688B2Oct 22, 2019
Method of manufacturing a semiconductor device including a ternary alloy layer formed by a microwafe anneal process
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations64
US12588431B2Mar 24, 2026
Semiconductor device with two-dimensional materials and forming method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12027628B2Jul 2, 2024
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US11670720B2Jun 6, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations58
US12324183B2Jun 3, 2025
Self-aligned unsymmetrical gate (SAUG) FinFET and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations54
US9859276B2Jan 2, 2018
FinFET semiconductor device having fins with stronger structural strength
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations51
US10269966B2Apr 23, 2019
Semiconductor device including a fin structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9502502B2Nov 22, 2016
Semiconductor devices and methods of manufacture thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations50
US9590105B2Mar 7, 2017
Semiconductor device with metal alloy over fin, conductive layer over channel region of fin, and semiconductive layer over conductive layer and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations49
US12376346B2Jul 29, 2025
Method for fabricating integrated circuit device with two gate structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations39