P

Inventor

TSAI WEN-JER

TW122 patents
⚠️ This page may combine multiple inventors who share the name “TSAI WEN-JER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MACRONIX INT CO LTD

43 patents
US6690601B2Feb 10, 2004

Nonvolatile semiconductor memory cell with electron-trapping erase state and methods for operating the same

MACRONIX INT CO LTD162 citations99
US6320786B1Nov 20, 2001

Method of controlling multi-state NROM

MACRONIX INT CO LTD431 citations99
US7236394B2Jun 26, 2007

Transistor-free random access memory

MACRONIX INT CO LTD61 citations98
US7187590B2Mar 6, 2007

Method and system for self-convergent erase in charge trapping memory cells

MACRONIX INT CO LTD95 citations98
US7158411B2Jan 2, 2007

Integrated code and data flash memory

MACRONIX INT CO LTD116 citations98
US6657894B2Dec 2, 2003

Apparatus and method for programming virtual ground nonvolatile memory cell array without disturbing adjacent cells

MACRONIX INT CO LTD108 citations98
US6996011B2Feb 7, 2006

NAND-type non-volatile memory cell and method for operating same

MACRONIX INT CO LTD62 citations96
US6829175B2Dec 7, 2004

Erasing method for non-volatile memory

MACRONIX INT CO LTD47 citations96
US6721204B1Apr 13, 2004

Memory erase method and device with optimal data retention for nonvolatile memory

MACRONIX INT CO LTD66 citations96
US6646924B1Nov 11, 2003

Non-volatile memory and operating method thereof

MACRONIX INT CO LTD64 citations96
US6614694B1Sep 2, 2003

Erase scheme for non-volatile memory

MACRONIX INT CO LTD67 citations96
US6215697B1Apr 10, 2001

Multi-level memory cell device and method for self-converged programming

MACRONIX INT CO LTD118 citations96
US6444523B1Sep 3, 2002

Method for fabricating a memory device with a floating gate

MACRONIX INT CO LTD63 citations95
US7035147B2Apr 25, 2006

Overerase protection of memory cells for nonvolatile memory

MACRONIX INT CO LTD22 citations93
US7272043B2Sep 18, 2007

Operation methods for a non-volatile memory cell in an array

MACRONIX INT CO LTD24 citations92
US7180123B2Feb 20, 2007

Method for programming programmable eraseless memory

MACRONIX INT CO LTD19 citations92
US7133317B2Nov 7, 2006

Method and apparatus for programming nonvolatile memory

MACRONIX INT CO LTD28 citations92
US7974127B2Jul 5, 2011

Operation methods for memory cell and array for reducing punch through leakage

MACRONIX INT CO LTD17 citations90
US10741262B2Aug 11, 2020

NAND flash operating techniques mitigating program disturbance

MACRONIX INT CO LTD11 citations85
US9830992B1Nov 28, 2017

Operation method of non-volatile memory cell and applications thereof

MACRONIX INT CO LTD10 citations84
US8755232B2Jun 17, 2014

Hot carrier programming in NAND flash

MACRONIX INT CO LTD6 citations84
US7514742B2Apr 7, 2009

Recessed shallow trench isolation

MACRONIX INT CO LTD11 citations84
US7397701B2Jul 8, 2008

Method and apparatus for operating a string of charge trapping memory cells

MACRONIX INT CO LTD16 citations84
US7283389B2Oct 16, 2007

Gated diode nonvolatile memory cell array

MACRONIX INT CO LTD12 citations84
US7132350B2Nov 7, 2006

Method for manufacturing a programmable eraseless memory

MACRONIX INT CO LTD13 citations84
US7057938B2Jun 6, 2006

Nonvolatile memory cell and operating method

MACRONIX INT CO LTD14 citations84
US6914819B2Jul 5, 2005

Non-volatile flash memory

MACRONIX INT CO LTD14 citations84
US6649971B1Nov 18, 2003

Nitride read-only memory cell for improving second-bit effect and method for making thereof

MACRONIX INT CO LTD18 citations84
US7269062B2Sep 11, 2007

Gated diode nonvolatile memory cell

MACRONIX INT CO LTD18 citations82
US7474558B2Jan 6, 2009

Gated diode nonvolatile memory cell array

MACRONIX INT CO LTD5 citations74
US7224619B2May 29, 2007

Method and apparatus for protection from over-erasing nonvolatile memory cells

MACRONIX INT CO LTD7 citations74
US7031196B2Apr 18, 2006

Nonvolatile semiconductor memory and operating method of the memory

MACRONIX INT CO LTD9 citations74
US6181604B1Jan 30, 2001

Method for fast programming of EPROMS and multi-level flash EPROMS

MACRONIX INT CO LTD14 citations74
US11037632B1Jun 15, 2021

Multi-tier 3D memory and erase method thereof

MACRONIX INT CO LTD3 citations73
US7864594B2Jan 4, 2011

Memory apparatus and method thereof for operating memory

MACRONIX INT CO LTD6 citations73
US7419868B2Sep 2, 2008

Gated diode nonvolatile memory process

MACRONIX INT CO LTD7 citations73
US11062759B1Jul 13, 2021

Memory device and programming method thereof

MACRONIX INT CO LTD3 citations72
US9373629B1Jun 21, 2016

Memory device and method for fabricating the same

MACRONIX INT CO LTD3 citations72
US8976581B2Mar 10, 2015

Non-volatile memory capable of programming cells by hot carrier injection based on a threshold voltage of a control cell

MACRONIX INT CO LTD5 citations72
US6445614B1Sep 3, 2002

Accelerated testing method and circuit for non-volatile memory

MACRONIX INT CO LTD10 citations72
US11641744B2May 2, 2023

Method for fabricating memory device

MACRONIX INT CO LTD0 citations63
US11289502B2Mar 29, 2022

Memory device and method for fabricating the same

MACRONIX INT CO LTD0 citations63
US7804152B2Sep 28, 2010

Recessed shallow trench isolation

MACRONIX INT CO LTD5 citations63

HUANG JYUN-SIANG

3 patents

TSAI PING-HUNG

1 patent

SHIN JIUH CORP

1 patent

CHONG LIT-HO

1 patent

TSAI WEN-JER

1 patent

Showing the top 50 of 122 patents by PatentIndex Score.