P

Inventor

LONG WEI

US67 patents
⚠️ This page may combine multiple inventors who share the name “LONG WEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

22 patents
US6225669B1May 1, 2001

Non-uniform gate/dielectric field effect transistor

ADVANCED MICRO DEVICES INC136 citations97
US6437404B1Aug 20, 2002

Semiconductor-on-insulator transistor with recessed source and drain

ADVANCED MICRO DEVICES INC64 citations96
US6790750B1Sep 14, 2004

Semiconductor-on-insulator body-source contact and method

ADVANCED MICRO DEVICES INC17 citations93
US6608352B1Aug 19, 2003

Determination of thermal resistance for field effect transistor formed in SOI technology

ADVANCED MICRO DEVICES INC33 citations93
US6441434B1Aug 27, 2002

Semiconductor-on-insulator body-source contact and method

ADVANCED MICRO DEVICES INC26 citations93
US6420770B1Jul 16, 2002

STI (Shallow Trench Isolation) structures for minimizing leakage current through drain and source silicides

ADVANCED MICRO DEVICES INC24 citations93
US6417556B1Jul 9, 2002

High K dielectric de-coupling capacitor embedded in backend interconnect

ADVANCED MICRO DEVICES INC25 citations93
US6274420B1Aug 14, 2001

Sti (shallow trench isolation) structures for minimizing leakage current through drain and source silicides

ADVANCED MICRO DEVICES INC18 citations93
US6255219B1Jul 3, 2001

Method for fabricating high-performance submicron MOSFET with lateral asymmetric channel

ADVANCED MICRO DEVICES INC24 citations93
US6168999B1Jan 2, 2001

Method for fabricating high-performance submicron mosfet with lateral asymmetric channel and a lightly doped drain

ADVANCED MICRO DEVICES INC43 citations93
US6153534ANov 28, 2000

Method for fabricating a dual material gate of a short channel field effect transistor

ADVANCED MICRO DEVICES INC31 citations93
US6069485AMay 30, 2000

C-V method to extract lateral channel doping profiles of MOSFETs

ADVANCED MICRO DEVICES INC26 citations93
US6391767B1May 21, 2002

Dual silicide process to reduce gate resistance

ADVANCED MICRO DEVICES INC35 citations92
US6166558ADec 26, 2000

Method for measuring gate length and drain/source gate overlap

ADVANCED MICRO DEVICES INC20 citations92
US6744101B2Jun 1, 2004

Non-uniform gate/dielectric field effect transistor

ADVANCED MICRO DEVICES INC38 citations91
US6306710B1Oct 23, 2001

Fabrication of a gate structures having a longer length toward the top for formation of a rectangular shaped spacer

ADVANCED MICRO DEVICES INC16 citations84
US6525381B1Feb 25, 2003

Semiconductor-on-insulator body-source contact using shallow-doped source, and method

ADVANCED MICRO DEVICES INC10 citations74
US6423604B1Jul 23, 2002

Determination of thermal resistance for field effect transistor formed in SOI technology

ADVANCED MICRO DEVICES INC12 citations74
US6373103B1Apr 16, 2002

Semiconductor-on-insulator body-source contact using additional drain-side spacer, and method

ADVANCED MICRO DEVICES INC12 citations74
US6323099B1Nov 27, 2001

High k interconnect de-coupling capacitor with damascene process

ADVANCED MICRO DEVICES INC12 citations74
US6275972B1Aug 14, 2001

Method for accurate channel-length extraction in MOSFETs

ADVANCED MICRO DEVICES INC12 citations74
US6169302B1Jan 2, 2001

Determination of parasitic capacitance between the gate and drain/source local interconnect of a field effect transistor

ADVANCED MICRO DEVICES INC10 citations74

SHENZHEN GOODIX TECH CO LTD

8 patents

SKYWORKS SOLUTIONS INC

4 patents

BETTA PHARMACEUTICALS CO LTD

4 patents

KANG XINSHAN

2 patents

WANG YINXIANG

2 patents

CITRIX SYSTEMS INC

2 patents

TELENAV INC

2 patents

HU SHAOJING

1 patent

LONG WEI

1 patent

SHENZHEN GOODIX TECHOLOGY CO LTD

1 patent

BETA PHARMA INC

1 patent

Showing the top 50 of 67 patents by PatentIndex Score.