Inventor

MITSUYU TSUNEO

JP23 patents

Patents

23 patents

US5492080AFeb 20, 1996

Crystal-growth method and semiconductor device production method using the crystal-growth method

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD91 citations96

US5341001AAug 23, 1994

Sulfide-selenide manganese-zinc mixed crystal photo semiconductor and laser diode

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD78 citations95

US6577386B2Jun 10, 2003

Method and apparatus for activating semiconductor impurities

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD16 citations92

US6255201B1Jul 3, 2001

Method and device for activating semiconductor impurities

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD23 citations92

US5339326AAug 16, 1994

Reflector for semiconductor laser end-face and method of manufacturing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD23 citations92

US5113473AMay 12, 1992

Nonlinear, optical thin-films and manufacturing method thereof

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD33 citations92

US5079594AJan 7, 1992

Nonlinear optical thin-film

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD23 citations92

US7313080B2Dec 25, 2007

Information recording medium and its production method, and optical information recording reproducing apparatus

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations84

US4735910AApr 5, 1988

In-situ doping of MBE grown II-VI compounds on a homo- or hetero-substrate

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD20 citations82

US4731172AMar 15, 1988

Method for sputtering multi-component thin-film

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD20 citations82

US4501987AFeb 26, 1985

Surface acoustic wave transducer using a split-finger electrode on a multi-layered substrate

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD20 citations82

US4276535AJun 30, 1981

Thermistor

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD27 citations82

US4354130AOct 12, 1982

Surface acoustic wave device using a multi-layer substrate including α2 O3, SiO and ZnO

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations74

US5817410AOct 6, 1998

Nonlinear optical composites using linear transparent substances and method for producing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD16 citations73

US5663974ASep 2, 1997

Semiconductor laser

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations73

US5464991ANov 7, 1995

Nonlinear optical materials and their manufacturing method

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations73

US5455431AOct 3, 1995

Nonlinear optical materials and their manufacturing method

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD5 citations73

US5215929AJun 1, 1993

Method of manufacturing pn-junction device II-VI compound semiconductor

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations72

US4458346AJul 3, 1984

Pickup stylus

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD9 citations71

US4236095ANov 25, 1980

Surface acoustic wave device comprising piezoelectric substrate having zinc oxide layer on α-alumina layer

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations63

US5599609AFeb 4, 1997

Nonlinear optical material and method of producing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations62

US5488234AJan 30, 1996

Semiconductor element having bivalent and VI group element and an insulating layer

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations58

US5396862AMar 14, 1995

Method of manufacturing a compound semiconductor

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1 citations51