Inventor
KADOKURA HIDEKIMI
JP32 patents
⚠️ This page may combine multiple inventors who share the name “KADOKURA HIDEKIMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SUMITOMO CHEMICAL CO
16 patentsUS4882143ANov 21, 1989
Lamina and a cosmetic comprising the same
SUMITOMO CHEMICAL CO17 citations82
US4584243AApr 22, 1986
Abrasive, production thereof and use thereof in magnetic recording medium
SUMITOMO CHEMICAL CO18 citations82
US4797500AJan 10, 1989
Purification of organometallic compounds
SUMITOMO CHEMICAL CO21 citations79
US5458669AOct 17, 1995
Process for purification of gallium material
SUMITOMO CHEMICAL CO13 citations74
US4740423AApr 26, 1988
Abrasive, production thereof and use thereof in magnetic recording medium
SUMITOMO CHEMICAL CO9 citations74
US4671993AJun 9, 1987
Magnetic recording medium
SUMITOMO CHEMICAL CO14 citations74
US5066530ANov 19, 1991
Lamina and a cosmetic comprising the same
SUMITOMO CHEMICAL CO9 citations73
US4650895AMar 17, 1987
Process for producing high purity metallic compound
SUMITOMO CHEMICAL CO10 citations73
US4704266ANov 3, 1987
Method for producing lithium aluminate powders
SUMITOMO CHEMICAL CO16 citations72
US5002750AMar 26, 1991
Process for producing alumina-based fiber
SUMITOMO CHEMICAL CO10 citations67
US4961889AOct 9, 1990
Process for producing inorganic fiber
SUMITOMO CHEMICAL CO8 citations63
US4498931AFeb 12, 1985
Pigmented aluminum oxide powder and method of producing the same
SUMITOMO CHEMICAL CO5 citations63
US4906762AMar 6, 1990
Process for producing trialkylarsenic compound
SUMITOMO CHEMICAL CO3 citations60
US4495121AJan 22, 1985
Process for producing inorganic fiber
SUMITOMO CHEMICAL CO5 citations60
US5012156AApr 30, 1991
Dispersion-type electroluminescence device
SUMITOMO CHEMICAL CO3 citations59
US3954958AMay 4, 1976
Preparation of aluminum hydrate
SUMITOMO CHEMICAL CO5 citations55
KABUSHIKIKAISHA KOJUNDOKAGAKU
13 patentsUS6593484B2Jul 15, 2003
Tantalum tertiary amylimido tris (dimethylamide), a process for producing the same, a solution of starting material for mocvd using the same, and a method of forming a tantalum nitride film using the same
KABUSHIKIKAISHA KOJUNDOKAGAKU153 citations94
US6207232B1Mar 27, 2001
Process for producing bis(alkyl-cyclopentadienyl) ruthenium complexes and process for producing ruthenium-containing films by using the same
KABUSHIKIKAISHA KOJUNDOKAGAKU30 citations92
US6002036ADec 14, 1999
Process for producing bis(alkyl-cyclopentadienyl)ruthenium complexes and process for producing ruthenium-containing films by using the same
KABUSHIKIKAISHA KOJUNDOKAGAKU40 citations92
US7635441B2Dec 22, 2009
Raw material for forming a strontium-containing thin film and process for preparing the raw material
KABUSHIKIKAISHA KOJUNDOKAGAKU14 citations90
US6046345AApr 4, 2000
Barium strontium β-diketonates, processes for producing the same and processes for producing barium strontium-containing oxide dielectric films with the use of the same
KABUSHIKIKAISHA KOJUNDOKAGAKU32 citations90
US5929267AJul 27, 1999
Trimethyl(ethylcyclopentadienyl)platinum, process for producing the same and process for producing platinum-containing films with the use of the same
KABUSHIKIKAISHA KOJUNDOKAGAKU14 citations74
US6426425B2Jul 30, 2002
Process for purifying gallium alkoxide
KABUSHIKIKAISHA KOJUNDOKAGAKU9 citations73
US6469189B1Oct 22, 2002
Liquid double alkoxide of niobium or tantalum and alkaline earth metal, production method thereof, and production method of complex metal oxide dielectric using it
KABUSHIKIKAISHA KOJUNDOKAGAKU9 citations71
US6376692B1Apr 23, 2002
Zirconium alkoxytris (β-Diketonate), process for manufacturing the same, and liquid composition for formation of PZT film
KABUSHIKIKAISHA KOJUNDOKAGAKU6 citations71
US5919963AJul 6, 1999
Process for purifying niobium alkoxides and tantalum alkoxides
KABUSHIKIKAISHA KOJUNDOKAGAKU8 citations62
US6472547B1Oct 29, 2002
Process for producing bismuth tertiary amyloxide
KABUSHIKIKAISHA KOJUNDOKAGAKU3 citations59
US6872419B2Mar 29, 2005
Method or process for producing PZT films at low substrate temperatures by chemical vapor deposition
KABUSHIKIKAISHA KOJUNDOKAGAKU1 citations50
US6930177B2Aug 16, 2005
High-purity lanthanum isoproxide and a process for producing the same
KABUSHIKIKAISHA KOJUNDOKAGAKU1 citations49