P

Inventor

KADOKURA HIDEKIMI

JP32 patents
⚠️ This page may combine multiple inventors who share the name “KADOKURA HIDEKIMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUMITOMO CHEMICAL CO

16 patents
US4882143ANov 21, 1989

Lamina and a cosmetic comprising the same

SUMITOMO CHEMICAL CO17 citations82
US4584243AApr 22, 1986

Abrasive, production thereof and use thereof in magnetic recording medium

SUMITOMO CHEMICAL CO18 citations82
US4797500AJan 10, 1989

Purification of organometallic compounds

SUMITOMO CHEMICAL CO21 citations79
US5458669AOct 17, 1995

Process for purification of gallium material

SUMITOMO CHEMICAL CO13 citations74
US4740423AApr 26, 1988

Abrasive, production thereof and use thereof in magnetic recording medium

SUMITOMO CHEMICAL CO9 citations74
US4671993AJun 9, 1987

Magnetic recording medium

SUMITOMO CHEMICAL CO14 citations74
US5066530ANov 19, 1991

Lamina and a cosmetic comprising the same

SUMITOMO CHEMICAL CO9 citations73
US4650895AMar 17, 1987

Process for producing high purity metallic compound

SUMITOMO CHEMICAL CO10 citations73
US4704266ANov 3, 1987

Method for producing lithium aluminate powders

SUMITOMO CHEMICAL CO16 citations72
US5002750AMar 26, 1991

Process for producing alumina-based fiber

SUMITOMO CHEMICAL CO10 citations67
US4961889AOct 9, 1990

Process for producing inorganic fiber

SUMITOMO CHEMICAL CO8 citations63
US4498931AFeb 12, 1985

Pigmented aluminum oxide powder and method of producing the same

SUMITOMO CHEMICAL CO5 citations63
US4906762AMar 6, 1990

Process for producing trialkylarsenic compound

SUMITOMO CHEMICAL CO3 citations60
US4495121AJan 22, 1985

Process for producing inorganic fiber

SUMITOMO CHEMICAL CO5 citations60
US5012156AApr 30, 1991

Dispersion-type electroluminescence device

SUMITOMO CHEMICAL CO3 citations59
US3954958AMay 4, 1976

Preparation of aluminum hydrate

SUMITOMO CHEMICAL CO5 citations55

KABUSHIKIKAISHA KOJUNDOKAGAKU

13 patents
US6593484B2Jul 15, 2003

Tantalum tertiary amylimido tris (dimethylamide), a process for producing the same, a solution of starting material for mocvd using the same, and a method of forming a tantalum nitride film using the same

KABUSHIKIKAISHA KOJUNDOKAGAKU153 citations94
US6207232B1Mar 27, 2001

Process for producing bis(alkyl-cyclopentadienyl) ruthenium complexes and process for producing ruthenium-containing films by using the same

KABUSHIKIKAISHA KOJUNDOKAGAKU30 citations92
US6002036ADec 14, 1999

Process for producing bis(alkyl-cyclopentadienyl)ruthenium complexes and process for producing ruthenium-containing films by using the same

KABUSHIKIKAISHA KOJUNDOKAGAKU40 citations92
US7635441B2Dec 22, 2009

Raw material for forming a strontium-containing thin film and process for preparing the raw material

KABUSHIKIKAISHA KOJUNDOKAGAKU14 citations90
US6046345AApr 4, 2000

Barium strontium β-diketonates, processes for producing the same and processes for producing barium strontium-containing oxide dielectric films with the use of the same

KABUSHIKIKAISHA KOJUNDOKAGAKU32 citations90
US5929267AJul 27, 1999

Trimethyl(ethylcyclopentadienyl)platinum, process for producing the same and process for producing platinum-containing films with the use of the same

KABUSHIKIKAISHA KOJUNDOKAGAKU14 citations74
US6426425B2Jul 30, 2002

Process for purifying gallium alkoxide

KABUSHIKIKAISHA KOJUNDOKAGAKU9 citations73
US6469189B1Oct 22, 2002

Liquid double alkoxide of niobium or tantalum and alkaline earth metal, production method thereof, and production method of complex metal oxide dielectric using it

KABUSHIKIKAISHA KOJUNDOKAGAKU9 citations71
US6376692B1Apr 23, 2002

Zirconium alkoxytris (β-Diketonate), process for manufacturing the same, and liquid composition for formation of PZT film

KABUSHIKIKAISHA KOJUNDOKAGAKU6 citations71
US5919963AJul 6, 1999

Process for purifying niobium alkoxides and tantalum alkoxides

KABUSHIKIKAISHA KOJUNDOKAGAKU8 citations62
US6472547B1Oct 29, 2002

Process for producing bismuth tertiary amyloxide

KABUSHIKIKAISHA KOJUNDOKAGAKU3 citations59
US6872419B2Mar 29, 2005

Method or process for producing PZT films at low substrate temperatures by chemical vapor deposition

KABUSHIKIKAISHA KOJUNDOKAGAKU1 citations50
US6930177B2Aug 16, 2005

High-purity lanthanum isoproxide and a process for producing the same

KABUSHIKIKAISHA KOJUNDOKAGAKU1 citations49

MATSUSHITA ELECTRONICS CORP

1 patent

KADOKURA HIDEKIMI

1 patent

TOKYO ELECTRON LTD

1 patent