P

Inventor

DOSAKA KATSUMI

JP123 patents
⚠️ This page may combine multiple inventors who share the name “DOSAKA KATSUMI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

47 patents
US5774409AJun 30, 1998

Multi-bank dRAM suitable for integration with processor on common semiconductor chip

MITSUBISHI ELECTRIC CORP120 citations99
US5278789AJan 11, 1994

Semiconductor memory device with improved buffer for generating internal write designating signal and operating method thereof

MITSUBISHI ELECTRIC CORP152 citations99
US6452859B1Sep 17, 2002

Dynamic semiconductor memory device superior in refresh characteristics

MITSUBISHI ELECTRIC CORP122 citations98
US5777942AJul 7, 1998

Semiconductor memory device including dynamic type memory and static type memory formed on the common chip and an operating method thereof

MITSUBISHI ELECTRIC CORP107 citations98
US5974493AOct 26, 1999

Microcomputer with processor bus having smaller width than memory bus

MITSUBISHI ELECTRIC CORP118 citations97
US6400625B2Jun 4, 2002

Semiconductor integrated circuit device capable of performing operational test for contained memory core at operating frequency higher than that of memory tester

MITSUBISHI ELECTRIC CORP66 citations96
US6233195B1May 15, 2001

Multi-bank DRAM suitable for integration with processor on common semiconductor chip

MITSUBISHI ELECTRIC CORP47 citations96
US6170036B1Jan 2, 2001

Semiconductor memory device and data transfer circuit for transferring data between a DRAM and a SRAM

MITSUBISHI ELECTRIC CORP37 citations96
US5940342AAug 17, 1999

Multi-bank DRAM suitable for integration with processor on common semiconductor chip

MITSUBISHI ELECTRIC CORP61 citations96
US5835448ANov 10, 1998

Clock synchronous semiconductor memory device for determining an operation mode

MITSUBISHI ELECTRIC CORP48 citations96
US5751655AMay 12, 1998

Synchronous type semiconductor memory device having internal operation timings determined by count values of an internal counter

MITSUBISHI ELECTRIC CORP75 citations96
US5726947AMar 10, 1998

Synchronous semiconductor memory device suitable for graphic data processing

MITSUBISHI ELECTRIC CORP58 citations96
US5708622AJan 13, 1998

Clock synchronous semiconductor memory device

MITSUBISHI ELECTRIC CORP53 citations96
US5652723AJul 29, 1997

Semiconductor memory device

MITSUBISHI ELECTRIC CORP51 citations96
US5603009AFeb 11, 1997

Semiconductor memory device including a data transfer circuit for transferring data between a DRAM and an SRAM

MITSUBISHI ELECTRIC CORP40 citations96
US5559750ASep 24, 1996

Semiconductor memory device

MITSUBISHI ELECTRIC CORP28 citations96
US5544121AAug 6, 1996

Semiconductor memory device

MITSUBISHI ELECTRIC CORP33 citations96
US5521878AMay 28, 1996

Clock synchronous semiconductor memory device

MITSUBISHI ELECTRIC CORP85 citations96
US4961007AOct 2, 1990

Substrate bias potential generator of a semiconductor integrated circuit device and a generating method therefor

MITSUBISHI ELECTRIC CORP101 citations96
US4961167AOct 2, 1990

Substrate bias generator in a dynamic random access memory with auto/self refresh functions and a method of generating a substrate bias therein

MITSUBISHI ELECTRIC CORP61 citations96
US4954992ASep 4, 1990

Random access memory having separate read out and write in bus lines for reduced access time and operating method therefor

MITSUBISHI ELECTRIC CORP73 citations96
US4943960AJul 24, 1990

Self-refreshing of dynamic random access memory device and operating method therefor

MITSUBISHI ELECTRIC CORP93 citations96
US4933907AJun 12, 1990

Dynamic random access memory device and operating method therefor

MITSUBISHI ELECTRIC CORP104 citations96
US4903268AFeb 20, 1990

Semiconductor memory device having on-chip error check and correction functions

MITSUBISHI ELECTRIC CORP59 citations96
US4837747AJun 6, 1989

Redundary circuit with a spare main decoder responsive to an address of a defective cell in a selected cell block

MITSUBISHI ELECTRIC CORP77 citations96
US4730320AMar 8, 1988

Semiconductor memory device

MITSUBISHI ELECTRIC CORP63 citations96
US4675850AJun 23, 1987

Semiconductor memory device

MITSUBISHI ELECTRIC CORP58 citations96
US6356484B2Mar 12, 2002

Semiconductor memory device

MITSUBISHI ELECTRIC CORP42 citations95
US6347063B1Feb 12, 2002

Semiconductor memory device including dynamic type memory and static type memory formed on the common chip and an operating method thereof

MITSUBISHI ELECTRIC CORP66 citations95
US6151269ANov 21, 2000

Semiconductor memory device including dynamic type memory and static type memory formed on the common chip and an operating method thereof

MITSUBISHI ELECTRIC CORP49 citations95
US6646944B2Nov 11, 2003

Semiconductor memory device

MITSUBISHI ELECTRIC CORP28 citations93
US6434661B1Aug 13, 2002

Synchronous semiconductor memory including register for storing data input and output mode information

MITSUBISHI ELECTRIC CORP19 citations93
US6378102B1Apr 23, 2002

Synchronous semiconductor memory device with multi-bank configuration

MITSUBISHI ELECTRIC CORP23 citations93
US6333873B1Dec 25, 2001

Semiconductor memory device with an internal voltage generating circuit

MITSUBISHI ELECTRIC CORP49 citations93
US6295238B1Sep 25, 2001

Semiconductor memory device having a circuit for fast operation

MITSUBISHI ELECTRIC CORP29 citations93
US6091659AJul 18, 2000

Synchronous semiconductor memory device with multi-bank configuration

MITSUBISHI ELECTRIC CORP36 citations93
US6008674ADec 28, 1999

Semiconductor integrated circuit device with adjustable high voltage detection circuit

MITSUBISHI ELECTRIC CORP46 citations93
US5956285ASep 21, 1999

Synchronous semiconductor memory device with multi-bank configuration

MITSUBISHI ELECTRIC CORP35 citations93
US5680363AOct 21, 1997

Semiconductor memory capable of transferring data at a high speed between an SRAM and a DRAM array

MITSUBISHI ELECTRIC CORP55 citations93
US5270977ADec 14, 1993

Dynamic random access memory device capable of performing test mode operation and method of operating such memory device

MITSUBISHI ELECTRIC CORP22 citations93
US5208778AMay 4, 1993

Dynamic-type semiconductor memory device operable in test mode and method of testing functions thereof

MITSUBISHI ELECTRIC CORP45 citations93
US5151614ASep 29, 1992

Circuit having charge compensation and an operation method of the same

MITSUBISHI ELECTRIC CORP46 citations93
US5010259AApr 23, 1991

Voltage boosting circuit and operating method thereof

MITSUBISHI ELECTRIC CORP40 citations93
US4907199AMar 6, 1990

Dynamic semiconductor memory device and method for controllig the precharge/refresh and access modes thereof

MITSUBISHI ELECTRIC CORP38 citations93
US4903238AFeb 20, 1990

Semiconductor memory device with improved immunity to supply voltage fluctuations

MITSUBISHI ELECTRIC CORP27 citations93
US4899313AFeb 6, 1990

Semiconductor memory device with an improved multi-bit test mode

MITSUBISHI ELECTRIC CORP28 citations93
US4896297AJan 23, 1990

Circuit for generating a boosted signal for a word line

MITSUBISHI ELECTRIC CORP35 citations93

RENESAS TECH CORP

2 patents

WATANABE NAOYA

1 patent

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