Inventor
BOREL JOSEPH
FR21 patents
⚠️ This page may combine multiple inventors who share the name “BOREL JOSEPH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
COMMISSARIAT ENERGIE ATOMIQUE
12 patentsUS4054864AOct 18, 1977
Method and device for the storage of analog signals
COMMISSARIAT ENERGIE ATOMIQUE76 citations95
US4031529AJun 21, 1977
Thermal method for controlling the optical properties of a liquid crystal and devices for the application of said method
COMMISSARIAT ENERGIE ATOMIQUE36 citations92
US4036553AJul 19, 1977
Method of controlling an optical characteristic
COMMISSARIAT ENERGIE ATOMIQUE25 citations81
US3956624AMay 11, 1976
Method and device for the storage and multiplication of analog signals
COMMISSARIAT ENERGIE ATOMIQUE20 citations81
US3939556AFeb 24, 1976
Liquid crystal cell
COMMISSARIAT ENERGIE ATOMIQUE21 citations78
US4143266AMar 6, 1979
Method and device for detecting radiatons
COMMISSARIAT ENERGIE ATOMIQUE12 citations72
US4065847AJan 3, 1978
Method of fabrication of a charge-coupled device
COMMISSARIAT ENERGIE ATOMIQUE13 citations71
US4035665AJul 12, 1977
Charge-coupled device comprising semiconductors having different forbidden band widths
COMMISSARIAT ENERGIE ATOMIQUE7 citations71
US4019247AApr 26, 1977
Fabrication of a charge-coupled device
COMMISSARIAT ENERGIE ATOMIQUE7 citations71
US3995939ADec 7, 1976
Method for controlling an optical characteristic of a material and an analog imager for carrying out said method
COMMISSARIAT ENERGIE ATOMIQUE10 citations71
US4031380AJun 21, 1977
Method and device for the integration of analog signals
COMMISSARIAT ENERGIE ATOMIQUE2 citations61
US3936861AFeb 3, 1976
Charge-coupled device and method of fabrication of the device
COMMISSARIAT ENERGIE ATOMIQUE5 citations60
EFCIS
4 patentsUS4780429AOct 25, 1988
Method of fabrication of MOS transistors having electrodes of metallic silicide
EFCIS49 citations89
US5457338AOct 10, 1995
Process for manufacturing isolated semi conductor components in a semi conductor wafer
EFCIS11 citations73
US4679309AJul 14, 1987
Process for manufacturing isolated semi conductor components in a semi conductor wafer
EFCIS2 citations62
US4731318AMar 15, 1988
Integrated circuit comprising MOS transistors having electrodes of metallic silicide and a method of fabrication of said circuit
EFCIS5 citations60