Inventor

BAUDRANT ANNIE

FR3 patents

⚠️ This page may combine multiple inventors who share the name “BAUDRANT ANNIE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

EFCIS

2 patents

US4593454AJun 10, 1986

Process for manufacturing an integrated circuit with tantalum silicide connections utilizing self-aligned oxidation

EFCIS61 citations94

US4780429AOct 25, 1988

Method of fabrication of MOS transistors having electrodes of metallic silicide

EFCIS49 citations89

FABRICATION DE CIRCUITS INTEGR

1 patent

US4714951ADec 22, 1987

Integrated circuit device which includes a continous layer which consists of conducting portions which are of a silicide of a refractory metal and insulating portions which are of an oxide of the metal

FABRICATION DE CIRCUITS INTEGR21 citations77