Inventor
MIWA HIROYUKI
JP37 patents
⚠️ This page may combine multiple inventors who share the name “MIWA HIROYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SONY CORP
36 patentsUS5583065ADec 10, 1996
Method of making a MOS semiconductor device
SONY CORP135 citations98
US5391503AFeb 21, 1995
Method of forming a stacked semiconductor device wherein semiconductor layers and insulating films are sequentially stacked and forming openings through such films and etchings using one of the insulating films as a mask
SONY CORP59 citations95
US5643806AJul 1, 1997
Manufacturing method for making bipolar device
SONY CORP23 citations92
US5629217AMay 13, 1997
Method and apparatus for SOI transistor
SONY CORP20 citations92
US5622887AApr 22, 1997
Process for fabricating BiCMOS devices including passive devices
SONY CORP18 citations92
US5541124AJul 30, 1996
Method for making bipolar transistor having double polysilicon structure
SONY CORP39 citations92
US5416031AMay 16, 1995
Method of producing Bi-CMOS transistors
SONY CORP22 citations92
US5414291AMay 9, 1995
Semiconductor device and process for fabricating the same
SONY CORP20 citations92
US5324672AJun 28, 1994
Manufacturing method for bipolar transistor
SONY CORP21 citations92
US5232861AAug 3, 1993
Method of manufacturing semiconductor device including a bipolar transistor
SONY CORP28 citations92
US5187554AFeb 16, 1993
Bipolar transistor
SONY CORP25 citations92
US5352624AOct 4, 1994
SOI type semiconductor device and manufacturing method therefor
SONY CORP28 citations91
US5163178ANov 10, 1992
Semiconductor device having enhanced impurity concentration profile
SONY CORP47 citations90
US6043552AMar 28, 2000
Semiconductor device and method of manufacturing the semiconductor device
SONY CORP18 citations84
US5872381AFeb 16, 1999
Semiconductor device and its manufacturing method
SONY CORP15 citations82
US5666001ASep 9, 1997
Transistor wherein the base area is covered with an insulating layer which is overlaid with a conductive film that might be polysilicon crystal or aluminum
SONY CORP17 citations82
US5580797ADec 3, 1996
Method of making SOI Transistor
SONY CORP15 citations82
US5548156AAug 20, 1996
Method and apparatus for SOI transistor
SONY CORP13 citations82
US6265276B1Jul 24, 2001
Structure and fabrication of bipolar transistor
SONY CORP6 citations74
US6159784ADec 12, 2000
Method of producing semiconductor device
SONY CORP7 citations74
US6043554AMar 28, 2000
Bipolar transistor and its manufacturing method
SONY CORP15 citations74
US5955775ASep 21, 1999
Structure of complementary bipolar transistors
SONY CORP11 citations74
US5786258AJul 28, 1998
Method of making an SOI transistor
SONY CORP10 citations74
US5352617AOct 4, 1994
Method for manufacturing Bi-CMOS transistor devices
SONY CORP17 citations74
US6005284ADec 21, 1999
Semiconductor device and its manufacturing method
SONY CORP10 citations73
US5641692AJun 24, 1997
Method for producing a Bi-MOS device
SONY CORP13 citations73
US4980748ADec 25, 1990
Semiconductor device made with a trenching process
SONY CORP12 citations72
US6323075B1Nov 27, 2001
Method of fabricating semiconductor device
SONY CORP3 citations63
US5824589AOct 20, 1998
Method for forming bipolar transistor having a reduced base transit time
SONY CORP2 citations63
US5783472AJul 21, 1998
Method of making an SOI transistor
SONY CORP3 citations63
US5629219AMay 13, 1997
Method for making a complementary bipolar transistor
SONY CORP4 citations63
US6344384B2Feb 5, 2002
Method of production of semiconductor device
SONY CORP5 citations62
US6136634AOct 24, 2000
Method of manufacturing semiconductor resistors
SONY CORP3 citations62
US5856228AJan 5, 1999
Manufacturing method for making bipolar device having double polysilicon structure
SONY CORP4 citations62
US6808999B2Oct 26, 2004
Method of making a bipolar transistor having a reduced base transit time
SONY CORP1 citations52
US6548873B2Apr 15, 2003
Semiconductor device and manufacturing method of the same
SONY CORP0 citations52