Inventor
GOMI TAKAYUKI
JP30 patents
⚠️ This page may combine multiple inventors who share the name “GOMI TAKAYUKI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SONY CORP
29 patentsUS5912479AJun 15, 1999
Heterojunction bipolar semiconductor device
SONY CORP89 citations96
US5846867ADec 8, 1998
Method of producing Si-Ge base heterojunction bipolar device
SONY CORP66 citations96
US5391503AFeb 21, 1995
Method of forming a stacked semiconductor device wherein semiconductor layers and insulating films are sequentially stacked and forming openings through such films and etchings using one of the insulating films as a mask
SONY CORP59 citations95
US6977426B1Dec 20, 2005
Semiconductor device including high speed transistors and high voltage transistors disposed on a single substrate
SONY CORP18 citations92
US5885880AMar 23, 1999
Bipolar transistor device and method for manufacturing the same
SONY CORP17 citations92
US5643806AJul 1, 1997
Manufacturing method for making bipolar device
SONY CORP23 citations92
US5629217AMay 13, 1997
Method and apparatus for SOI transistor
SONY CORP20 citations92
US5622887AApr 22, 1997
Process for fabricating BiCMOS devices including passive devices
SONY CORP18 citations92
US5541124AJul 30, 1996
Method for making bipolar transistor having double polysilicon structure
SONY CORP39 citations92
US5414291AMay 9, 1995
Semiconductor device and process for fabricating the same
SONY CORP20 citations92
US5010026AApr 23, 1991
Process for making bipolar transistor
SONY CORP29 citations92
US5163178ANov 10, 1992
Semiconductor device having enhanced impurity concentration profile
SONY CORP47 citations90
US6008524ADec 28, 1999
Integrated injection logic semiconductor device
SONY CORP16 citations82
US5580797ADec 3, 1996
Method of making SOI Transistor
SONY CORP15 citations82
US5548156AAug 20, 1996
Method and apparatus for SOI transistor
SONY CORP13 citations82
US6222250B1Apr 24, 2001
Bipolar transistor device and method for manufacturing the same
SONY CORP13 citations74
US6034402AMar 7, 2000
Semiconductor device
SONY CORP8 citations74
US5976940ANov 2, 1999
Method of making plurality of bipolar transistors
SONY CORP11 citations74
US5861640AJan 19, 1999
Mesa bipolar transistor with sub base layer
SONY CORP16 citations74
US5858850AJan 12, 1999
Process of fabricating integrated heterojunction bipolar device and MIS capacitor
SONY CORP11 citations74
US5786258AJul 28, 1998
Method of making an SOI transistor
SONY CORP10 citations74
US5389561AFeb 14, 1995
Method for making SOI type bipolar transistor
SONY CORP18 citations74
US4994881AFeb 19, 1991
Bipolar transistor
SONY CORP12 citations74
US6596600B1Jul 22, 2003
Integrated injection logic semiconductor device and method of fabricating the same
SONY CORP2 citations63
US5915186AJun 22, 1999
Method of manufacturing heterojunction bipolar device having Si1-x Gex base
SONY CORP6 citations63
US5893743AApr 13, 1999
Process of fabricating semiconductor device
SONY CORP3 citations63
US5783472AJul 21, 1998
Method of making an SOI transistor
SONY CORP3 citations63
US5856228AJan 5, 1999
Manufacturing method for making bipolar device having double polysilicon structure
SONY CORP4 citations62
US5830799ANov 3, 1998
Method for forming embedded diffusion layers using an alignment mark
SONY CORP4 citations62