P

Inventor

SAITO KEISHI

JP60 patents
⚠️ This page may combine multiple inventors who share the name “SAITO KEISHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CANON KK

46 patents
US7453065B2Nov 18, 2008

Sensor and image pickup device

CANON KK3,985 citations99
US5093704AMar 3, 1992

Semiconductor device having a semiconductor region in which a band gap being continuously graded

CANON KK297 citations99
US7733015B2Jun 8, 2010

Organic electroluminescent display device having a planarizing layer and manufacturing method thereof

CANON KK76 citations98
US5421909AJun 6, 1995

Photovoltaic conversion device

CANON KK115 citations97
US6153823ANov 28, 2000

Photoelectric conversion element having a surface member or a protection member and building material using the same

CANON KK65 citations96
US5599403AFeb 4, 1997

Semiconductor device containing microcrystalline germanium & method for producing the same

CANON KK66 citations96
US5456762AOct 10, 1995

Photoelectric conversion elements

CANON KK65 citations96
US5401330AMar 28, 1995

Photovoltaic element

CANON KK78 citations96
US4689093AAug 25, 1987

Process for the preparation of photoelectromotive force member

CANON KK60 citations96
US5656098AAug 12, 1997

Photovoltaic conversion device and method for producing same

CANON KK93 citations95
US7663116B2Feb 16, 2010

Sensor and image pickup device

CANON KK22 citations93
US7535010B2May 19, 2009

Sensor and image pickup device

CANON KK26 citations93
US7001460B2Feb 21, 2006

Semiconductor element and its manufacturing method

CANON KK13 citations93
US6635899B2Oct 21, 2003

Semiconductor element having microcrystalline grains and manufacturing method thereof

CANON KK26 citations93
US6379994B1Apr 30, 2002

Method for manufacturing photovoltaic element

CANON KK29 citations93
US6362020B1Mar 26, 2002

Process of forming deposited film, process of producing semiconductor element substrate, and process of producing photovoltaic element

CANON KK19 citations93
US6331474B1Dec 18, 2001

Defect compensation method for semiconductor element

CANON KK26 citations93
US6303945B1Oct 16, 2001

Semiconductor element having microcrystalline semiconductor material

CANON KK24 citations93
US6107116AAug 22, 2000

Method for producing a photovoltaic element with zno layer having increasing fluorine content in layer thickness direction

CANON KK34 citations93
US6054024AApr 25, 2000

Apparatus for forming transparent conductive film by sputtering and method therefor

CANON KK34 citations93
US5849108ADec 15, 1998

Photovoltaic element with zno layer having increasing fluorine content in layer thickness direction

CANON KK24 citations93
US5824566AOct 20, 1998

Method of producing a photovoltaic device

CANON KK52 citations93
US5676765AOct 14, 1997

Pin junction photovoltaic device having a multi-layered I-type semiconductor layer with a specific non-single crystal I-type layer formed by a microwave plasma CVD process

CANON KK40 citations93
US5342452AAug 30, 1994

Photovoltaic device

CANON KK20 citations93
US4788120ANov 29, 1988

Light receiving member for use in electrophotography having an amorphous silicon layer

CANON KK27 citations93
US4702934AOct 27, 1987

Electrophotographic photosensitive member, process and apparatus for the preparation thereof

CANON KK31 citations93
US5439533AAug 8, 1995

Photovoltaic device, method of producing the same and generating system using the same

CANON KK22 citations92
US5429685AJul 4, 1995

Photoelectric conversion element and power generation system using the same

CANON KK34 citations92
US5371380ADec 6, 1994

Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1×10.sup.(19) (cm-3) or less

CANON KK23 citations92
US5284525AFeb 8, 1994

Solar cell

CANON KK21 citations92
US5281541AJan 25, 1994

Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method

CANON KK23 citations92
US4898798AFeb 6, 1990

Photosensitive member having a light receiving layer comprising a carbonic film for use in electrophotography

CANON KK36 citations92
US6483021B2Nov 19, 2002

Stacked photovoltaic element

CANON KK15 citations84
US5418680AMay 23, 1995

Apparatus for repairing an electrically short-circuited semiconductor device

CANON KK16 citations82
US5563075AOct 8, 1996

Forming a non-monocrystalline silicone semiconductor having pin junction including laminated intrinsic layers

CANON KK15 citations74
US5563425AOct 8, 1996

Photoelectrical conversion device and generating system using the same

CANON KK12 citations74
US5510631AApr 23, 1996

Non-monocrystalline silicon carbide semiconductor and semiconductor device employing the same

CANON KK10 citations74
US5362684ANov 8, 1994

Non-monocrystalline silicon carbide semiconductor, process of production thereof, and semiconductor device employing the same

CANON KK13 citations74
US4940642AJul 10, 1990

Electrophotographic light receiving member having polycrystalline silicon charge injection inhibition layer prepared by chemical reaction of excited precursors and A-SI:C:H surface layer

CANON KK7 citations74
US4892800AJan 9, 1990

Photosensitive member having a photoconductive layer comprising a carbonic film for use in electrophotography

CANON KK9 citations74
US4887134ADec 12, 1989

Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded

CANON KK6 citations74
US4845001AJul 4, 1989

Light receiving member for use in electrophotography with a surface layer comprising non-single-crystal material containing tetrahedrally bonded boron nitride

CANON KK10 citations74
US4803093AFeb 7, 1989

Process for preparing a functional deposited film

CANON KK18 citations74
US4798167AJan 17, 1989

Apparatus for preparing a photoelectromotive force member having a concentric triplicate conduit for generating active species and precursor

CANON KK8 citations74
US4795691AJan 3, 1989

Layered amorphous silicon photoconductor with surface layer having specific refractive index properties

CANON KK19 citations74
US10561396B2Feb 18, 2020

Ultrasonic probe, and photoacoustic-ultrasonic system and inspection object imaging apparatus including the ultrasonic probe

CANON KK1 citations73

PIONEER ELECTRONIC CORP

2 patents

SAITO KEISHI

1 patent

SOMEDA YASUHIRO

1 patent

Showing the top 50 of 60 patents by PatentIndex Score.