Inventor
SAITO KEISHI
JP60 patents
⚠️ This page may combine multiple inventors who share the name “SAITO KEISHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CANON KK
46 patentsUS7453065B2Nov 18, 2008
Sensor and image pickup device
CANON KK3,985 citations99
US5093704AMar 3, 1992
Semiconductor device having a semiconductor region in which a band gap being continuously graded
CANON KK297 citations99
US7733015B2Jun 8, 2010
Organic electroluminescent display device having a planarizing layer and manufacturing method thereof
CANON KK76 citations98
US5421909AJun 6, 1995
Photovoltaic conversion device
CANON KK115 citations97
US6153823ANov 28, 2000
Photoelectric conversion element having a surface member or a protection member and building material using the same
CANON KK65 citations96
US5599403AFeb 4, 1997
Semiconductor device containing microcrystalline germanium & method for producing the same
CANON KK66 citations96
US5456762AOct 10, 1995
Photoelectric conversion elements
CANON KK65 citations96
US5401330AMar 28, 1995
Photovoltaic element
CANON KK78 citations96
US4689093AAug 25, 1987
Process for the preparation of photoelectromotive force member
CANON KK60 citations96
US5656098AAug 12, 1997
Photovoltaic conversion device and method for producing same
CANON KK93 citations95
US7663116B2Feb 16, 2010
Sensor and image pickup device
CANON KK22 citations93
US7535010B2May 19, 2009
Sensor and image pickup device
CANON KK26 citations93
US7001460B2Feb 21, 2006
Semiconductor element and its manufacturing method
CANON KK13 citations93
US6635899B2Oct 21, 2003
Semiconductor element having microcrystalline grains and manufacturing method thereof
CANON KK26 citations93
US6379994B1Apr 30, 2002
Method for manufacturing photovoltaic element
CANON KK29 citations93
US6362020B1Mar 26, 2002
Process of forming deposited film, process of producing semiconductor element substrate, and process of producing photovoltaic element
CANON KK19 citations93
US6331474B1Dec 18, 2001
Defect compensation method for semiconductor element
CANON KK26 citations93
US6303945B1Oct 16, 2001
Semiconductor element having microcrystalline semiconductor material
CANON KK24 citations93
US6107116AAug 22, 2000
Method for producing a photovoltaic element with zno layer having increasing fluorine content in layer thickness direction
CANON KK34 citations93
US6054024AApr 25, 2000
Apparatus for forming transparent conductive film by sputtering and method therefor
CANON KK34 citations93
US5849108ADec 15, 1998
Photovoltaic element with zno layer having increasing fluorine content in layer thickness direction
CANON KK24 citations93
US5824566AOct 20, 1998
Method of producing a photovoltaic device
CANON KK52 citations93
US5676765AOct 14, 1997
Pin junction photovoltaic device having a multi-layered I-type semiconductor layer with a specific non-single crystal I-type layer formed by a microwave plasma CVD process
CANON KK40 citations93
US5342452AAug 30, 1994
Photovoltaic device
CANON KK20 citations93
US4788120ANov 29, 1988
Light receiving member for use in electrophotography having an amorphous silicon layer
CANON KK27 citations93
US4702934AOct 27, 1987
Electrophotographic photosensitive member, process and apparatus for the preparation thereof
CANON KK31 citations93
US5439533AAug 8, 1995
Photovoltaic device, method of producing the same and generating system using the same
CANON KK22 citations92
US5429685AJul 4, 1995
Photoelectric conversion element and power generation system using the same
CANON KK34 citations92
US5371380ADec 6, 1994
Si- and/or Ge-containing non-single crystalline semiconductor film with an average radius of 3.5 A or less as for microvoids contained therein and a microvoid density 1×10.sup.(19) (cm-3) or less
CANON KK23 citations92
US5284525AFeb 8, 1994
Solar cell
CANON KK21 citations92
US5281541AJan 25, 1994
Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method
CANON KK23 citations92
US4898798AFeb 6, 1990
Photosensitive member having a light receiving layer comprising a carbonic film for use in electrophotography
CANON KK36 citations92
US6483021B2Nov 19, 2002
Stacked photovoltaic element
CANON KK15 citations84
US5418680AMay 23, 1995
Apparatus for repairing an electrically short-circuited semiconductor device
CANON KK16 citations82
US5563075AOct 8, 1996
Forming a non-monocrystalline silicone semiconductor having pin junction including laminated intrinsic layers
CANON KK15 citations74
US5563425AOct 8, 1996
Photoelectrical conversion device and generating system using the same
CANON KK12 citations74
US5510631AApr 23, 1996
Non-monocrystalline silicon carbide semiconductor and semiconductor device employing the same
CANON KK10 citations74
US5362684ANov 8, 1994
Non-monocrystalline silicon carbide semiconductor, process of production thereof, and semiconductor device employing the same
CANON KK13 citations74
US4940642AJul 10, 1990
Electrophotographic light receiving member having polycrystalline silicon charge injection inhibition layer prepared by chemical reaction of excited precursors and A-SI:C:H surface layer
CANON KK7 citations74
US4892800AJan 9, 1990
Photosensitive member having a photoconductive layer comprising a carbonic film for use in electrophotography
CANON KK9 citations74
US4887134ADec 12, 1989
Semiconductor device having a semiconductor region in which either the conduction or valence band remains flat while bandgap is continuously graded
CANON KK6 citations74
US4845001AJul 4, 1989
Light receiving member for use in electrophotography with a surface layer comprising non-single-crystal material containing tetrahedrally bonded boron nitride
CANON KK10 citations74
US4803093AFeb 7, 1989
Process for preparing a functional deposited film
CANON KK18 citations74
US4798167AJan 17, 1989
Apparatus for preparing a photoelectromotive force member having a concentric triplicate conduit for generating active species and precursor
CANON KK8 citations74
US4795691AJan 3, 1989
Layered amorphous silicon photoconductor with surface layer having specific refractive index properties
CANON KK19 citations74
US10561396B2Feb 18, 2020
Ultrasonic probe, and photoacoustic-ultrasonic system and inspection object imaging apparatus including the ultrasonic probe
CANON KK1 citations73
PIONEER ELECTRONIC CORP
2 patentsSAITO KEISHI
1 patentSOMEDA YASUHIRO
1 patentShowing the top 50 of 60 patents by PatentIndex Score.