Inventor

TABAT MARTIN D

US17 patents

⚠️ This page may combine multiple inventors who share the name “TABAT MARTIN D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TABAT MARTIN D

TEL EPION INC

Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products

Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation

Method and system for directional growth using a gas cluster ion beam

Apparatus and method for reducing particulate contamination in gas cluster ion beam processing equipment

Gas cluster ion beam etching process for etching Si-containing, Ge-containing, and metal-containing materials

Compensated location specific processing apparatus and method

Compensated location specific processing apparatus and method

TABAT MARTIN D

Method for selectively etching areas of a substrate using a gas cluster ion beam

Multiple nozzle gas cluster ion beam processing system and method of operating

Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials

Method for depositing hydrogenated diamond-like carbon films using a gas cluster ion beam

Multiple nozzle gas cluster ion beam system

Method of irradiating substrate with gas cluster ion beam formed from multiple gas nozzles

SHAO YAN

Gas cluster ion beam etching process for Si-containing and Ge-containing materials

Gas cluster ion beam etching process for metal-containing materials

EPION CORP

Method and apparatus for improved processing with a gas-cluster ion beam

AEROSPACE CORP

Method for patterning and etching film layers of semiconductor devices