Inventor
ZENKE MASANOBU
JP21 patents
⚠️ This page may combine multiple inventors who share the name “ZENKE MASANOBU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
20 patentsUS5521126AMay 28, 1996
Method of fabricating semiconductor devices
NEC CORP210 citations98
US6258690B1Jul 10, 2001
Method of manufacturing semiconductor device
NEC CORP66 citations96
US5959326ASep 28, 1999
Capacitor incorporated in semiconductor device having a lower electrode composed of multi-layers or of graded impurity concentration
NEC CORP88 citations96
US5372962ADec 13, 1994
Method of making a semiconductor integrated circuit device having a capacitor with a porous surface of an electrode
NEC CORP106 citations95
US5956595ASep 21, 1999
Method of fabricating a semiconductor integrated circuit having a capacitor with lower electrode comprising titanium nitride
NEC CORP26 citations92
US5700710ADec 23, 1997
Process of fabricating capacitor having waved rough surface of accumulating electrode
NEC CORP40 citations92
US5441594AAug 15, 1995
Method of manufacturing semiconductor device
NEC CORP28 citations92
US5187557AFeb 16, 1993
Semiconductor capacitor with a metal nitride film and metal oxide dielectric
NEC CORP34 citations92
US6146966ANov 14, 2000
Process for forming a capacitor incorporated in a semiconductor device
NEC CORP12 citations74
US6020248AFeb 1, 2000
Method for fabricating semiconductor device having capacitor increased in capacitance by using hemispherical grains without reduction of dopant concentration
NEC CORP13 citations74
US5969381AOct 19, 1999
Semiconductor device with unbreakable testing elements for evaluating components and process of fabrication thereof
NEC CORP7 citations74
US5851581ADec 22, 1998
Semiconductor device fabrication method for preventing tungsten from removing
NEC CORP15 citations74
US5811333ASep 22, 1998
Method of roughening a polysilicon layer of a random crystal structure included in a semiconductor device
NEC CORP11 citations74
US5691229ANov 25, 1997
Process of fabricating dynamic random access memory cell having inter-level insulating structure without silicon nitride layer between access transistor and storage node
NEC CORP16 citations74
US5525540AJun 11, 1996
Method for manufacturing silicon layer having impurity diffusion preventing layer
NEC CORP14 citations72
US6204076B1Mar 20, 2001
Semiconductor device with unbreakable testing elements for evaluating components and process of fabrication thereof
NEC CORP2 citations63
US5843840ADec 1, 1998
Semiconductor device having a wiring layer and method for manufacturing same
NEC CORP1 citations60
US5798569AAug 25, 1998
Semiconductor device having multilayered wiring structure
NEC CORP4 citations60
US5897983AApr 27, 1999
Method for forming a capacitor in a memory cell in a dynamic random access memory device
NEC CORP5 citations58
US5700738ADec 23, 1997
Method for producing a semiconductor device
NEC CORP1 citations52