Inventor

KIM CHUL-SUNG

KR60 patents

⚠️ This page may combine multiple inventors who share the name “KIM CHUL-SUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KIM CHUL-SUNG

SAMSUNG ELECTRONICS CO LTD

Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer

Method and device for forming an STI type isolation in a semiconductor device

Method for fabricating semiconductor device having a silicide layer

Integrated circuit device and method of fabricating the same

Methods of forming integrated circuits with thermal oxide layers on side walls of gate electrodes wherein the source and drain are higher than the gate electrode

Method and device for forming an STI type isolation in a semiconductor device

Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer

Method of forming self-aligned silicide in semiconductor device

Semiconductor devices including recessed source/drain silicides and methods of forming the same

Semiconductor device having contact plugs

Methods of forming a thin-film structure, methods of manufacturing non-volatile semiconductor devices using the same, and resulting non-volatile semiconductor devices

Integrated circuit device

Semiconductor device having contact pads and method for manufacturing the same

Transistor having reverse self-aligned structure

Method and device for forming an STI type isolation in a semiconductor device

Semiconductor devices including contact structures that partially overlap silicide layers

Semiconductor devices having reduced contact resistance

Semiconductor device and method of manufacturing the same

Integrated circuit device

Semiconductor device including contact plug and method of manufacturing the same

Semiconductor devices including active areas with increased contact area

Method of forming an insulation structure and method of manufacturing a semiconductor device using the same

Memory devices and methods of manufacturing the same

Methods for fabricating DRAM semiconductor devices including silicon epitaxial and metal silicide layers

Semiconductor devices having gate structures and contact pads that are lower than the gate structures

Metal oxide semiconductor transistors having a drain punch through blocking region and methods for fabricating metal oxide semiconductor transistors having a drain punch through blocking region

Semiconductor device and method for fabricating the same

Semiconductor devices including recessed source/drain silicides and methods of forming the same

Methods of forming impurity containing insulating films and flash memory devices including the same

Semiconductor devices having tunnel and gate insulating layers

Method of manufacturing a flash memory device having compensation members formed on edge portions of a tunnel oxide layer

Method of manufacturing a non-volatile memory device

EXXONMOBIL UPSTREAM RES CO

Method for identification of unknown substances

Reliability measures for statistical prediction of geophysical and geological parameters in geophysical prospecting

Rapid method for reservoir connectivity analysis using a fast marching method

Method for rapid fault interpretation of fault surfaces generated to fit three-dimensional seismic discontinuity data

Determining connectivity architecture in 2-D and 3-D heterogeneous data

SAMSUNG KWANGJU ELECTRONICS CO

Suction muffler for hermetic reciprocating compressor

Hermetic reciprocating compressor

Hermetic compressor

SHIN CHUNG HWAN

Semiconductor devices with shaped portions of elevated source/drain regions

Semiconductor devices with shaped portions of elevated source/drain regions

EXXON PRODUCTION RESEARCH CO

Reconstruction of geologic thermal histories

KIM JIN-BUM

Semiconductor device and method of fabricating the same

SHIN CHUNG-HWAN

Methods of forming semiconductor devices with metal silicide using pre-amorphization implants

DOBIN MARK W

Tracking geologic object and detecting geologic anomalies in exploration seismic data volume

HOLL JAMES E

Functional-based knowledge analysis in a 2D and 3D visual environment

KIM CHUL-SUNG

Method of generating and combining multiple horizons to determine a seismic horizon and its uncertainty

LEE DO-SUN

Semiconductor devices including contact structures that partially overlap silicide layers

UNIV KOREA RES & BUS FOUND

Method for preparation of hematite iron oxide with different nanostructures and hematite iron oxide prepared thereby