Inventor
GABRIEL CALVIN T
US68 patents
⚠️ This page may combine multiple inventors who share the name “GABRIEL CALVIN T”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
30 patentsUS6716571B2Apr 6, 2004
Selective photoresist hardening to facilitate lateral trimming
ADVANCED MICRO DEVICES INC545 citations99
US6583046B1Jun 24, 2003
Post-treatment of low-k dielectric for prevention of photoresist poisoning
ADVANCED MICRO DEVICES INC67 citations96
US6534397B1Mar 18, 2003
Pre-treatment of low-k dielectric for prevention of photoresist poisoning
ADVANCED MICRO DEVICES INC56 citations96
US6475929B1Nov 5, 2002
Method of manufacturing a semiconductor structure with treatment to sacrificial stop layer producing diffusion to an adjacent low-k dielectric layer lowering the constant
ADVANCED MICRO DEVICES INC70 citations96
US6864184B1Mar 8, 2005
Method for reducing critical dimension attainable via the use of an organic conforming layer
ADVANCED MICRO DEVICES INC49 citations93
US6811956B1Nov 2, 2004
Line edge roughness reduction by plasma treatment before etch
ADVANCED MICRO DEVICES INC35 citations93
US6603206B2Aug 5, 2003
Slot via filled dual damascene interconnect structure without middle etch stop layer
ADVANCED MICRO DEVICES INC17 citations93
US6599839B1Jul 29, 2003
Plasma etch process for nonhomogenous film
ADVANCED MICRO DEVICES INC36 citations93
US6521524B1Feb 18, 2003
Via filled dual damascene structure with middle stop layer and method for making the same
ADVANCED MICRO DEVICES INC36 citations93
US6518646B1Feb 11, 2003
Semiconductor device with variable composition low-k inter-layer dielectric and method of making
ADVANCED MICRO DEVICES INC40 citations93
US6472231B1Oct 29, 2002
Dielectric layer with treated top surface forming an etch stop layer and method of making the same
ADVANCED MICRO DEVICES INC43 citations93
US6465889B1Oct 15, 2002
Silicon carbide barc in dual damascene processing
ADVANCED MICRO DEVICES INC32 citations93
US6372631B1Apr 16, 2002
Method of making a via filled dual damascene structure without middle stop layer
ADVANCED MICRO DEVICES INC29 citations93
US6645679B1Nov 11, 2003
Attenuated phase shift mask for use in EUV lithography and a method of making such a mask
ADVANCED MICRO DEVICES INC51 citations92
US6593037B1Jul 15, 2003
EUV mask or reticle having reduced reflections
ADVANCED MICRO DEVICES INC30 citations92
US7379924B1May 27, 2008
Quantifying and predicting the impact of line edge roughness on device reliability and performance
ADVANCED MICRO DEVICES INC9 citations84
US7309659B1Dec 18, 2007
Silicon-containing resist to pattern organic low k-dielectrics
ADVANCED MICRO DEVICES INC15 citations84
US7235414B1Jun 26, 2007
Using scatterometry to verify contact hole opening during tapered bilayer etch
ADVANCED MICRO DEVICES INC13 citations84
US7052921B1May 30, 2006
System and method using in situ scatterometry to detect photoresist pattern integrity during the photolithography process
ADVANCED MICRO DEVICES INC16 citations84
US6815359B2Nov 9, 2004
Process for improving the etch stability of ultra-thin photoresist
ADVANCED MICRO DEVICES INC16 citations84
US6632707B1Oct 14, 2003
Method for forming an interconnect structure using a CVD organic BARC to mitigate via poisoning
ADVANCED MICRO DEVICES INC15 citations84
US6451673B1Sep 17, 2002
Carrier gas modification for preservation of mask layer during plasma etching
ADVANCED MICRO DEVICES INC20 citations84
US6448654B1Sep 10, 2002
Ultra thin etch stop layer for damascene process
ADVANCED MICRO DEVICES INC16 citations84
US6383919B1May 7, 2002
Method of making a dual damascene structure without middle stop layer
ADVANCED MICRO DEVICES INC18 citations84
US7427457B1Sep 23, 2008
Methods for designing grating structures for use in situ scatterometry to detect photoresist defects
ADVANCED MICRO DEVICES INC11 citations83
US7132306B1Nov 7, 2006
Method of forming an interlevel dielectric layer employing dielectric etch-back process without extra mask set
ADVANCED MICRO DEVICES INC11 citations83
US7288487B1Oct 30, 2007
Metal/oxide etch after polish to prevent bridging between adjacent features of a semiconductor structure
ADVANCED MICRO DEVICES INC9 citations74
US7279429B1Oct 9, 2007
Method to improve ignition in plasma etching or plasma deposition steps
ADVANCED MICRO DEVICES INC7 citations74
US6846749B1Jan 25, 2005
N-containing plasma etch process with reduced resist poisoning
ADVANCED MICRO DEVICES INC7 citations74
US6495447B1Dec 17, 2002
Use of hydrogen doping for protection of low-k dielectric layers
ADVANCED MICRO DEVICES INC13 citations74
VLSI TECHNOLOGY INC
18 patentsUS5420796AMay 30, 1995
Method of inspecting planarity of wafer surface after etchback step in integrated circuit fabrication
VLSI TECHNOLOGY INC141 citations98
US5861342AJan 19, 1999
Optimized structures for dummy fill mask design
VLSI TECHNOLOGY INC75 citations96
US5639697AJun 17, 1997
Dummy underlayers for improvement in removal rate consistency during chemical mechanical polishing
VLSI TECHNOLOGY INC73 citations96
US5198072AMar 30, 1993
Method and apparatus for detecting imminent end-point when etching dielectric layers in a plasma etch system
VLSI TECHNOLOGY INC53 citations96
US5290734AMar 1, 1994
Method for making anti-fuse structures
VLSI TECHNOLOGY INC78 citations95
US5120679AJun 9, 1992
Anti-fuse structures and methods for making same
VLSI TECHNOLOGY INC116 citations95
US5405488AApr 11, 1995
System and method for plasma etching endpoint detection
VLSI TECHNOLOGY INC92 citations94
US5522957AJun 4, 1996
Method for leak detection in etching chambers
VLSI TECHNOLOGY INC28 citations93
US5462892AOct 31, 1995
Semiconductor processing method for preventing corrosion of metal film connections
VLSI TECHNOLOGY INC32 citations93
US5397433AMar 14, 1995
Method and apparatus for patterning a metal layer
VLSI TECHNOLOGY INC23 citations93
US5294295AMar 15, 1994
Method for moisture sealing integrated circuits using silicon nitride spacer protection of oxide passivation edges
VLSI TECHNOLOGY INC41 citations93
US5965941AOct 12, 1999
Use of dummy underlayers for improvement in removal rate consistency during chemical mechanical polishing
VLSI TECHNOLOGY INC21 citations92
US5753561AMay 19, 1998
Method for making shallow trench isolation structure having rounded corners
VLSI TECHNOLOGY INC50 citations92
US5638006AJun 10, 1997
Method and apparatus for wafer level prediction of thin oxide reliability using differentially sized gate-like antennae
VLSI TECHNOLOGY INC20 citations92
US5548224AAug 20, 1996
Method and apparatus for wafer level prediction of thin oxide reliability
VLSI TECHNOLOGY INC21 citations92
US5328865AJul 12, 1994
Method for making cusp-free anti-fuse structures
VLSI TECHNOLOGY INC35 citations92
US4954212ASep 4, 1990
Endpoint detection system and method for plasma etching
VLSI TECHNOLOGY INC32 citations92
US6057245AMay 2, 2000
Gas phase planarization process for semiconductor wafers
VLSI TECHNOLOGY INC14 citations82
PHILIPS ELECTRONICS NA
2 patentsShowing the top 50 of 68 patents by PatentIndex Score.