P

Inventor

GABRIEL CALVIN T

US68 patents
⚠️ This page may combine multiple inventors who share the name “GABRIEL CALVIN T”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

30 patents
US6716571B2Apr 6, 2004

Selective photoresist hardening to facilitate lateral trimming

ADVANCED MICRO DEVICES INC545 citations99
US6583046B1Jun 24, 2003

Post-treatment of low-k dielectric for prevention of photoresist poisoning

ADVANCED MICRO DEVICES INC67 citations96
US6534397B1Mar 18, 2003

Pre-treatment of low-k dielectric for prevention of photoresist poisoning

ADVANCED MICRO DEVICES INC56 citations96
US6475929B1Nov 5, 2002

Method of manufacturing a semiconductor structure with treatment to sacrificial stop layer producing diffusion to an adjacent low-k dielectric layer lowering the constant

ADVANCED MICRO DEVICES INC70 citations96
US6864184B1Mar 8, 2005

Method for reducing critical dimension attainable via the use of an organic conforming layer

ADVANCED MICRO DEVICES INC49 citations93
US6811956B1Nov 2, 2004

Line edge roughness reduction by plasma treatment before etch

ADVANCED MICRO DEVICES INC35 citations93
US6603206B2Aug 5, 2003

Slot via filled dual damascene interconnect structure without middle etch stop layer

ADVANCED MICRO DEVICES INC17 citations93
US6599839B1Jul 29, 2003

Plasma etch process for nonhomogenous film

ADVANCED MICRO DEVICES INC36 citations93
US6521524B1Feb 18, 2003

Via filled dual damascene structure with middle stop layer and method for making the same

ADVANCED MICRO DEVICES INC36 citations93
US6518646B1Feb 11, 2003

Semiconductor device with variable composition low-k inter-layer dielectric and method of making

ADVANCED MICRO DEVICES INC40 citations93
US6472231B1Oct 29, 2002

Dielectric layer with treated top surface forming an etch stop layer and method of making the same

ADVANCED MICRO DEVICES INC43 citations93
US6465889B1Oct 15, 2002

Silicon carbide barc in dual damascene processing

ADVANCED MICRO DEVICES INC32 citations93
US6372631B1Apr 16, 2002

Method of making a via filled dual damascene structure without middle stop layer

ADVANCED MICRO DEVICES INC29 citations93
US6645679B1Nov 11, 2003

Attenuated phase shift mask for use in EUV lithography and a method of making such a mask

ADVANCED MICRO DEVICES INC51 citations92
US6593037B1Jul 15, 2003

EUV mask or reticle having reduced reflections

ADVANCED MICRO DEVICES INC30 citations92
US7379924B1May 27, 2008

Quantifying and predicting the impact of line edge roughness on device reliability and performance

ADVANCED MICRO DEVICES INC9 citations84
US7309659B1Dec 18, 2007

Silicon-containing resist to pattern organic low k-dielectrics

ADVANCED MICRO DEVICES INC15 citations84
US7235414B1Jun 26, 2007

Using scatterometry to verify contact hole opening during tapered bilayer etch

ADVANCED MICRO DEVICES INC13 citations84
US7052921B1May 30, 2006

System and method using in situ scatterometry to detect photoresist pattern integrity during the photolithography process

ADVANCED MICRO DEVICES INC16 citations84
US6815359B2Nov 9, 2004

Process for improving the etch stability of ultra-thin photoresist

ADVANCED MICRO DEVICES INC16 citations84
US6632707B1Oct 14, 2003

Method for forming an interconnect structure using a CVD organic BARC to mitigate via poisoning

ADVANCED MICRO DEVICES INC15 citations84
US6451673B1Sep 17, 2002

Carrier gas modification for preservation of mask layer during plasma etching

ADVANCED MICRO DEVICES INC20 citations84
US6448654B1Sep 10, 2002

Ultra thin etch stop layer for damascene process

ADVANCED MICRO DEVICES INC16 citations84
US6383919B1May 7, 2002

Method of making a dual damascene structure without middle stop layer

ADVANCED MICRO DEVICES INC18 citations84
US7427457B1Sep 23, 2008

Methods for designing grating structures for use in situ scatterometry to detect photoresist defects

ADVANCED MICRO DEVICES INC11 citations83
US7132306B1Nov 7, 2006

Method of forming an interlevel dielectric layer employing dielectric etch-back process without extra mask set

ADVANCED MICRO DEVICES INC11 citations83
US7288487B1Oct 30, 2007

Metal/oxide etch after polish to prevent bridging between adjacent features of a semiconductor structure

ADVANCED MICRO DEVICES INC9 citations74
US7279429B1Oct 9, 2007

Method to improve ignition in plasma etching or plasma deposition steps

ADVANCED MICRO DEVICES INC7 citations74
US6846749B1Jan 25, 2005

N-containing plasma etch process with reduced resist poisoning

ADVANCED MICRO DEVICES INC7 citations74
US6495447B1Dec 17, 2002

Use of hydrogen doping for protection of low-k dielectric layers

ADVANCED MICRO DEVICES INC13 citations74

VLSI TECHNOLOGY INC

18 patents
US5420796AMay 30, 1995

Method of inspecting planarity of wafer surface after etchback step in integrated circuit fabrication

VLSI TECHNOLOGY INC141 citations98
US5861342AJan 19, 1999

Optimized structures for dummy fill mask design

VLSI TECHNOLOGY INC75 citations96
US5639697AJun 17, 1997

Dummy underlayers for improvement in removal rate consistency during chemical mechanical polishing

VLSI TECHNOLOGY INC73 citations96
US5198072AMar 30, 1993

Method and apparatus for detecting imminent end-point when etching dielectric layers in a plasma etch system

VLSI TECHNOLOGY INC53 citations96
US5290734AMar 1, 1994

Method for making anti-fuse structures

VLSI TECHNOLOGY INC78 citations95
US5120679AJun 9, 1992

Anti-fuse structures and methods for making same

VLSI TECHNOLOGY INC116 citations95
US5405488AApr 11, 1995

System and method for plasma etching endpoint detection

VLSI TECHNOLOGY INC92 citations94
US5522957AJun 4, 1996

Method for leak detection in etching chambers

VLSI TECHNOLOGY INC28 citations93
US5462892AOct 31, 1995

Semiconductor processing method for preventing corrosion of metal film connections

VLSI TECHNOLOGY INC32 citations93
US5397433AMar 14, 1995

Method and apparatus for patterning a metal layer

VLSI TECHNOLOGY INC23 citations93
US5294295AMar 15, 1994

Method for moisture sealing integrated circuits using silicon nitride spacer protection of oxide passivation edges

VLSI TECHNOLOGY INC41 citations93
US5965941AOct 12, 1999

Use of dummy underlayers for improvement in removal rate consistency during chemical mechanical polishing

VLSI TECHNOLOGY INC21 citations92
US5753561AMay 19, 1998

Method for making shallow trench isolation structure having rounded corners

VLSI TECHNOLOGY INC50 citations92
US5638006AJun 10, 1997

Method and apparatus for wafer level prediction of thin oxide reliability using differentially sized gate-like antennae

VLSI TECHNOLOGY INC20 citations92
US5548224AAug 20, 1996

Method and apparatus for wafer level prediction of thin oxide reliability

VLSI TECHNOLOGY INC21 citations92
US5328865AJul 12, 1994

Method for making cusp-free anti-fuse structures

VLSI TECHNOLOGY INC35 citations92
US4954212ASep 4, 1990

Endpoint detection system and method for plasma etching

VLSI TECHNOLOGY INC32 citations92
US6057245AMay 2, 2000

Gas phase planarization process for semiconductor wafers

VLSI TECHNOLOGY INC14 citations82

PHILIPS ELECTRONICS NA

2 patents

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