P

Inventor

DERNER SCOTT

US29 patents
⚠️ This page may combine multiple inventors who share the name “DERNER SCOTT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

28 patents
US9786348B1Oct 10, 2017

Dynamic adjustment of memory cell digit line capacitance

MICRON TECHNOLOGY INC55 citations97
US6781867B2Aug 24, 2004

Embedded ROM device using substrate leakage

MICRON TECHNOLOGY INC44 citations96
US6545899B1Apr 8, 2003

ROM embedded DRAM with bias sensing

MICRON TECHNOLOGY INC53 citations96
US6785167B2Aug 31, 2004

ROM embedded DRAM with programming

MICRON TECHNOLOGY INC22 citations92
US6108804AAug 22, 2000

Method and apparatus for testing adjustment of a circuit parameter

MICRON TECHNOLOGY INC22 citations92
US7366946B2Apr 29, 2008

ROM redundancy in ROM embedded DRAM

MICRON TECHNOLOGY INC11 citations84
US7218547B2May 15, 2007

ROM embedded DRAM with anti-fuse programming

MICRON TECHNOLOGY INC11 citations84
US7174477B2Feb 6, 2007

ROM redundancy in ROM embedded DRAM

MICRON TECHNOLOGY INC11 citations84
US6735108B2May 11, 2004

ROM embedded DRAM with anti-fuse programming

MICRON TECHNOLOGY INC14 citations84
US6665207B2Dec 16, 2003

ROM embedded DRAM with dielectric removal/short

MICRON TECHNOLOGY INC14 citations84
US6996021B2Feb 7, 2006

ROM embedded DRAM with bias sensing

MICRON TECHNOLOGY INC9 citations82
US6865100B2Mar 8, 2005

6F2 architecture ROM embedded DRAM

MICRON TECHNOLOGY INC6 citations74
US6852611B2Feb 8, 2005

ROM embedded DRAM with dielectric removal/short

MICRON TECHNOLOGY INC5 citations74
US6788603B2Sep 7, 2004

ROM embedded DRAM with bias sensing

MICRON TECHNOLOGY INC3 citations74
US6747889B2Jun 8, 2004

Half density ROM embedded DRAM

MICRON TECHNOLOGY INC8 citations74
US6731556B2May 4, 2004

DRAM with bias sensing

MICRON TECHNOLOGY INC7 citations74
US6367039B1Apr 2, 2002

Method and apparatus for testing adjustment of a circuit parameter

MICRON TECHNOLOGY INC6 citations74
US10153024B2Dec 11, 2018

Dynamic adjustment of memory cell digit line capacitance

MICRON TECHNOLOGY INC2 citations72
US9934839B2Apr 3, 2018

Dynamic adjustment of memory cell digit line capacitance

MICRON TECHNOLOGY INC2 citations72
US7001816B2Feb 21, 2006

Embedded ROM device using substrate leakage

MICRON TECHNOLOGY INC3 citations63
US6903957B2Jun 7, 2005

Half density ROM embedded DRAM

MICRON TECHNOLOGY INC4 citations63
US6865130B2Mar 8, 2005

ROM embedded DRAM with bias sensing

MICRON TECHNOLOGY INC1 citations63
US6768664B2Jul 27, 2004

ROM embedded DRAM with bias sensing

MICRON TECHNOLOGY INC2 citations63
US7099212B2Aug 29, 2006

Embedded ROM device using substrate leakage

MICRON TECHNOLOGY INC0 citations52
US7012006B2Mar 14, 2006

Embedded ROM device using substrate leakage

MICRON TECHNOLOGY INC0 citations52
US6771529B2Aug 3, 2004

ROM embedded DRAM with bias sensing

MICRON TECHNOLOGY INC0 citations52
US6603693B2Aug 5, 2003

DRAM with bias sensing

MICRON TECHNOLOGY INC0 citations52
US10796743B2Oct 6, 2020

Dynamic adjustment of memory cell digit line capacitance

MICRON TECHNOLOGY INC0 citations51

NANYA TECHNOLOGY CORP

1 patent