P

Inventor

KURTH CASEY

US34 patents
⚠️ This page may combine multiple inventors who share the name “KURTH CASEY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MICRON TECHNOLOGY INC

28 patents
US6781867B2Aug 24, 2004

Embedded ROM device using substrate leakage

MICRON TECHNOLOGY INC44 citations96
US6545899B1Apr 8, 2003

ROM embedded DRAM with bias sensing

MICRON TECHNOLOGY INC53 citations96
US6281131B1Aug 28, 2001

Methods of forming electrical contacts

MICRON TECHNOLOGY INC63 citations94
US6785167B2Aug 31, 2004

ROM embedded DRAM with programming

MICRON TECHNOLOGY INC22 citations92
US10062677B2Aug 28, 2018

Back-to-back solid state lighting devices and associated methods

MICRON TECHNOLOGY INC6 citations84
US7366946B2Apr 29, 2008

ROM redundancy in ROM embedded DRAM

MICRON TECHNOLOGY INC11 citations84
US7218547B2May 15, 2007

ROM embedded DRAM with anti-fuse programming

MICRON TECHNOLOGY INC11 citations84
US7174477B2Feb 6, 2007

ROM redundancy in ROM embedded DRAM

MICRON TECHNOLOGY INC11 citations84
US6735108B2May 11, 2004

ROM embedded DRAM with anti-fuse programming

MICRON TECHNOLOGY INC14 citations84
US6665207B2Dec 16, 2003

ROM embedded DRAM with dielectric removal/short

MICRON TECHNOLOGY INC14 citations84
US6996021B2Feb 7, 2006

ROM embedded DRAM with bias sensing

MICRON TECHNOLOGY INC9 citations82
US6865100B2Mar 8, 2005

6F2 architecture ROM embedded DRAM

MICRON TECHNOLOGY INC6 citations74
US6852611B2Feb 8, 2005

ROM embedded DRAM with dielectric removal/short

MICRON TECHNOLOGY INC5 citations74
US6788603B2Sep 7, 2004

ROM embedded DRAM with bias sensing

MICRON TECHNOLOGY INC3 citations74
US6747889B2Jun 8, 2004

Half density ROM embedded DRAM

MICRON TECHNOLOGY INC8 citations74
US6731556B2May 4, 2004

DRAM with bias sensing

MICRON TECHNOLOGY INC7 citations74
US11037918B2Jun 15, 2021

Back-to-back solid state lighting devices and associated methods

MICRON TECHNOLOGY INC3 citations73
US7001816B2Feb 21, 2006

Embedded ROM device using substrate leakage

MICRON TECHNOLOGY INC3 citations63
US6903957B2Jun 7, 2005

Half density ROM embedded DRAM

MICRON TECHNOLOGY INC4 citations63
US6865130B2Mar 8, 2005

ROM embedded DRAM with bias sensing

MICRON TECHNOLOGY INC1 citations63
US6768664B2Jul 27, 2004

ROM embedded DRAM with bias sensing

MICRON TECHNOLOGY INC2 citations63
US12191298B2Jan 7, 2025

Back-to-back solid state lighting devices and associated methods

MICRON TECHNOLOGY INC0 citations62
US11710732B2Jul 25, 2023

Back-to-back solid state lighting devices and associated methods

MICRON TECHNOLOGY INC0 citations62
US6472328B2Oct 29, 2002

Methods of forming an electrical contact to semiconductive material

MICRON TECHNOLOGY INC3 citations61
US7099212B2Aug 29, 2006

Embedded ROM device using substrate leakage

MICRON TECHNOLOGY INC0 citations52
US7012006B2Mar 14, 2006

Embedded ROM device using substrate leakage

MICRON TECHNOLOGY INC0 citations52
US6771529B2Aug 3, 2004

ROM embedded DRAM with bias sensing

MICRON TECHNOLOGY INC0 citations52
US6603693B2Aug 5, 2003

DRAM with bias sensing

MICRON TECHNOLOGY INC0 citations52

BASCERI CEM

2 patents

SCHUBERT MARTIN F

1 patent

SCHELLHAMMER SCOTT D

1 patent

QROMIS INC

1 patent

QUORA TECH INC

1 patent