Inventor
HORII YOSHIMASA
JP17 patents
⚠️ This page may combine multiple inventors who share the name “HORII YOSHIMASA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
9 patentsUS7176132B2Feb 13, 2007
Manufacturing method of semiconductor device
FUJITSU LTD30 citations92
US6887716B2May 3, 2005
Process for producing high quality PZT films for ferroelectric memory integrated circuits
FUJITSU LTD34 citations92
US6674633B2Jan 6, 2004
Process for producing a strontium ruthenium oxide protective layer on a top electrode
FUJITSU LTD19 citations91
US6812510B2Nov 2, 2004
Ferroelectric capacitor, process for manufacturing thereof and ferroelectric memory
FUJITSU LTD11 citations73
US7075135B2Jul 11, 2006
Semiconductor device having a stress layer for applying tensile of compressive stress to the ferroelectric film
FUJITSU LTD5 citations72
US7029984B2Apr 18, 2006
Method for fabricating semiconductor device
FUJITSU LTD8 citations71
US6964873B2Nov 15, 2005
Semiconductor device having a ferroelectric capacitor and a fabrication process thereof
FUJITSU LTD7 citations70
US7241656B2Jul 10, 2007
Semiconductor device and its manufacture method, and measurement fixture for the semiconductor device
FUJITSU LTD4 citations61
US7239026B2Jul 3, 2007
Semiconductor device having die attachment and die pad for applying tensile or compressive stress to the IC chip
FUJITSU LTD0 citations50
FUJITSU SEMICONDUCTOR LTD
3 patentsUS8344434B2Jan 1, 2013
Semiconductor device having ferroelectric capacitor
FUJITSU SEMICONDUCTOR LTD7 citations84
US7960228B2Jun 14, 2011
Methods of making a ferroelectric memory device having improved interfacial characteristics
FUJITSU SEMICONDUCTOR LTD12 citations84
US7897413B2Mar 1, 2011
Methods of making a ferroelectric memory device having improved interfacial characteristics
FUJITSU SEMICONDUCTOR LTD11 citations84