Inventor
CHU FAN
US19 patents
⚠️ This page may combine multiple inventors who share the name “CHU FAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CYPRESS SEMICONDUCTOR CORP
6 patentsUS9514797B1Dec 6, 2016
Hybrid reference generation for ferroelectric random access memory
CYPRESS SEMICONDUCTOR CORP21 citations92
US10074422B1Sep 11, 2018
2T1C ferro-electric random access memory cell
CYPRESS SEMICONDUCTOR CORP25 citations91
US9514816B1Dec 6, 2016
Non-volatile static RAM and method of operation thereof
CYPRESS SEMICONDUCTOR CORP20 citations89
US10304731B2May 28, 2019
Damascene oxygen barrier and hydrogen barrier for ferroelectric random-access memory
CYPRESS SEMICONDUCTOR CORP0 citations52
US10332596B2Jun 25, 2019
2T1C ferro-electric random access memory cell
CYPRESS SEMICONDUCTOR CORP0 citations49
US8963343B1Feb 24, 2015
Ferroelectric memories with a stress buffer
CYPRESS SEMICONDUCTOR CORP1 citations42
FUJITSU LTD
5 patentsUS6887716B2May 3, 2005
Process for producing high quality PZT films for ferroelectric memory integrated circuits
FUJITSU LTD34 citations92
US6627930B1Sep 30, 2003
Ferroelectric thin film capacitors having multi-layered crystallographic textures
FUJITSU LTD18 citations83
US6617626B2Sep 9, 2003
Ferroelectric semiconductor memory device and a fabrication process thereof
FUJITSU LTD7 citations72
US6964873B2Nov 15, 2005
Semiconductor device having a ferroelectric capacitor and a fabrication process thereof
FUJITSU LTD7 citations70
US6777287B2Aug 17, 2004
Ferroelectric semiconductor memory device and a fabrication process thereof
FUJITSU LTD1 citations51
RAMTRON INT CORP
4 patentsUS6376259B1Apr 23, 2002
Method for manufacturing a ferroelectric memory cell including co-annealing
RAMTRON INT CORP34 citations91
US6287637B1Sep 11, 2001
Multi-layer approach for optimizing ferroelectric film performance
RAMTRON INT CORP25 citations91
US7116572B2Oct 3, 2006
Circuit for generating a centered reference voltage for a 1T/1C ferroelectric memory
RAMTRON INT CORP14 citations82
US7313010B2Dec 25, 2007
Circuit for generating a centered reference voltage for a 1T/1C ferroelectric memory
RAMTRON INT CORP9 citations71