Inventor

YOSHIDA SEIKOH

JP30 patents

⚠️ This page may combine multiple inventors who share the name “YOSHIDA SEIKOH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YOSHIDA SEIKOH

FURUKAWA ELECTRIC CO LTD

GaN-based field effect transistor of a normally-off type

III-V nitride semiconductor device, and protection element and power conversion apparatus using the same

GaN-based compound semiconductor device

GaN-based high electron mobility transistor

GaN-type semiconductor vertical field effect transistor

III-V nitride semiconductor devices and process for the production thereof

Method of growing single crystal of compound semiconductor

Field effect transistor and manufacturing method therefor

Nitride semiconductor heterojunction field effect transistor

GaN-based semiconductor device

GaN based semiconductor element

Nitride-based compound semiconductor electron device including a buffer layer structure

Method of producing field effect transistor

Process for producing semiconductor device using optical absorption layer

ED inverter circuit and integrate circuit element including the same

Semiconductor device and GaN-based field effect transistor for use in the same

Method of growing single crystal of compound semiconductors

Method for growing compound semiconductor crystal

Field effect transistor and method of manufacturing the same

IKEDA NARIAKI

GaN-based semiconductor element

GaN-based semiconductor element

GaN semiconductor device having a high withstand voltage

SATO YOSHIHIRO

Semiconductor device

Field effect transistor having semiconductor operating layer formed with an inclined side wall

NIIYAMA YUKI

Normally-off field effect transistor using III-nitride semiconductor and method for manufacturing such transistor

KAYA SHUSUKE

GaN-based semiconductor device and method of manufacturing the same

NIYAMA YUKI

Field effect transistor

OPTOELECTRONICS TECHNOLOGY RES

Method of growing a crystal of a compound semiconductor at a low temperature

KAMBAYASHI HIROSHI

Semiconductor device

NOMURA TAKEHIKO

Field effect transistor having MOS structure made of nitride compound semiconductor