Inventor
DRAY CYRILLE
FR37 patents
⚠️ This page may combine multiple inventors who share the name “DRAY CYRILLE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SA
16 patentsUS6639427B2Oct 28, 2003
High-voltage switching device and application to a non-volatile memory
ST MICROELECTRONICS SA64 citations94
US7333362B2Feb 19, 2008
Electrically erasable and programmable, non-volatile semiconductor memory device having a single layer of gate material, and corresponding memory plane
ST MICROELECTRONICS SA24 citations89
US6707697B2Mar 16, 2004
FAMOS type non-volatile memory
ST MICROELECTRONICS SA7 citations74
US6639270B2Oct 28, 2003
Non-volatile memory cell
ST MICROELECTRONICS SA7 citations74
US6639838B2Oct 28, 2003
Non-volatile memory architecture and integrated circuit comprising a corresponding memory
ST MICROELECTRONICS SA7 citations73
US7751229B2Jul 6, 2010
SRAM memory device with improved write operation and method thereof
ST MICROELECTRONICS SA5 citations72
US7391661B2Jun 24, 2008
Column redundancy system for an integrated circuit memory
ST MICROELECTRONICS SA4 citations63
US7795917B2Sep 14, 2010
High-speed buffer circuit, system and method
ST MICROELECTRONICS SA4 citations61
US6728135B2Apr 27, 2004
Memory cell of the famos type having several programming logic levels
ST MICROELECTRONICS SA2 citations61
US6667909B2Dec 23, 2003
Method of erasing a FAMOS memory cell and a corresponding memory cell
ST MICROELECTRONICS SA2 citations61
US6940119B2Sep 6, 2005
Non-volatile programmable and electrically erasable memory with a single layer of gate material
ST MICROELECTRONICS SA2 citations57
US7489559B2Feb 10, 2009
Recursive device for switching over a high potential greater than a nominal potential of a technology in which the device is made and related system and method
ST MICROELECTRONICS SA4 citations54
US7139212B2Nov 21, 2006
Memory architecture with segmented writing lines
ST MICROELECTRONICS SA0 citations51
US7545686B2Jun 9, 2009
Device for setting up a write current in an MRAM type memory and memory comprising
ST MICROELECTRONICS SA0 citations50
US7110315B2Sep 19, 2006
Switch arrangement for switching a node between different voltages without generating combinational currents
ST MICROELECTRONICS SA0 citations42
US6850112B2Feb 1, 2005
Device for controlling a circuit generating reference voltages
ST MICROELECTRONICS SA0 citations42
INTEL CORP
7 patentsUS9418761B2Aug 16, 2016
Apparatus for boosting source-line voltage to reduce leakage in resistive memories
INTEL CORP9 citations82
US9286976B2Mar 15, 2016
Apparatuses and methods for detecting write completion for resistive memory
INTEL CORP7 citations81
US9875783B2Jan 23, 2018
High voltage tolerant word-line driver
INTEL CORP2 citations72
US9865322B2Jan 9, 2018
Low resistance bitline and sourceline apparatus for improving read and write operations of a nonvolatile memory
INTEL CORP4 citations72
US11024356B2Jun 1, 2021
Apparatus for low power write and read operations for resistive memory
INTEL CORP0 citations61
US10068628B2Sep 4, 2018
Apparatus for low power write and read operations for resistive memory
INTEL CORP1 citations61
US10438640B2Oct 8, 2019
Apparatus for low power write and read operations for resistive memory
INTEL CORP0 citations51
DRAY CYRILLE
5 patentsUS9478273B2Oct 25, 2016
Low resistance bitline and sourceline apparatus for improving read and write operations of a nonvolatile memory
DRAY CYRILLE8 citations82
US8243490B2Aug 14, 2012
Memory with intervening transistor
DRAY CYRILLE2 citations61
US8605479B2Dec 10, 2013
Nonvolatile memory architecture
DRAY CYRILLE3 citations59
US8335121B2Dec 18, 2012
Method for implementing an SRAM memory information storage device
DRAY CYRILLE1 citations50
US8331166B2Dec 11, 2012
Method and system for reading from memory cells in a memory device
DRAY CYRILLE1 citations47
INTEL IP CORP
2 patentsST MICROELECTRONICS INC
2 patentsUS7209383B2Apr 24, 2007
Magnetic random access memory array having bit/word lines for shared write select and read operations
ST MICROELECTRONICS INC10 citations82
US7372728B2May 13, 2008
Magnetic random access memory array having bit/word lines for shared write select and read operations
ST MICROELECTRONICS INC1 citations51