Inventor

ZHENG LINGYI A

US49 patents

⚠️ This page may combine multiple inventors who share the name “ZHENG LINGYI A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ZHENG LINGYI A

MICRON TECHNOLOGY INC

Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces

Method and structure for reducing leakage current in capacitors

Atomic layer deposition of capacitor dielectric

Methods of fabricating double-sided hemispherical silicon grain electrodes and capacitor modules

Oxygen barrier for cell container process

Method of atomic layer deposition on plural semiconductor substrates simultaneously

Methods of fabricating double-sided hemispherical silicon grain electrodes and capacitor modules

Methods for making semiconductor device structures with capacitor containers and contact apertures having increased aspect ratios

Methods for treating pluralities of discrete semiconductor substrates

Methods for making semiconductor device structures with capacitor containers and contact apertures having increased aspect ratios

Method of forming inside rough and outside smooth HSG electrodes and capacitor structure

Reduction of damage in semiconductor container capacitors

Ultra thin TCS (SiCl4) cell nitride for DRAM capacitor with DCS (SiH2Cl2) interface seeding layer

Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers

Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces

Methods for forming small-scale capacitor structures

Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers

Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition

Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces

Cell nitride nucleation on insulative layers and reduced corner leakage of container capacitors

Method and structure for reducing leakage current in capacitors

Methods and systems for controlling temperature during microfeature workpiece processing, E.G. CVD deposition

Methods of fabricating double-sided hemispherical silicon grain electrodes and capacitor modules

Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces

Methods for treating semiconductor substrates

Semiconductor devices having double-sided hemispherical silicon grain electrodes

Methods for treating pluralities of discrete semiconductor substrates

Cell nitride nucleation on insulative layers and reduced corner leakage of container capacitors

Oxygen barrier for cell container process

Ultra thin TCS (SiCL4) cell nitride for dram capacitor with DCS (SiH2Cl2) interface seeding layer

Methods of forming capacitors

Capacitor constructions comprising a nitrogen-containing layer over a rugged polysilicon layer

Methods for forming small-scale capacitor structures

Ultra thin TCS (SiCl4) cell nitride for DRAM capacitor with DCS (SiH2Cl2) interface seeding layer

Method of forming inside rough and outside smooth HSG electrodes and capacitor structure

Methods of forming metal nitride, and methods of forming capacitor constructions

Methods of forming semiconductor capacitors and memory devices

Reduction of damage in semiconductor container capacitors

Method and structure for reducing leakage current in capacitors

Method of forming inside rough and outside smooth HSG electrodes and capacitor structure

Semiconductor constructions

Method of forming inside rough and outside smooth HSG electrodes and capacitor structure

Methods of fabricating double-sided hemispherical silicon grain electrodes and capacitor modules

Methods for treating pluralities of discrete semiconductor substrates

Method and structure for reducing leakage current in capacitors

Capacitor constructions comprising a nitrogen-containing layer over a rugged polysilicon layer

Methods of forming dielectric materials

BEAMAN KEVIN L

Methods and systems for controlling temperature during microfeature workpiece processing, E.G., CVD deposition

ZHENG LINGYI A

Ultra thin TCS (SiCl4) cell nitride for DRAM capacitor with DCS (SiH2Cl2) interface seeding layer