Inventor

YUN JONG-HO

KR30 patents

⚠️ This page may combine multiple inventors who share the name “YUN JONG-HO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YUN JONG-HO

SAMSUNG ELECTRONICS CO LTD

Method of forming semiconductor device having stacked transistors

Semiconductor device including upper and lower transistors and interconnection between upper and lower transistors

Stacked semiconductor device and method of fabrication

Methods of forming silicide films with metal films in semiconductor devices and contacts including the same

Methods of forming interlayer dielectrics having air gaps

Methods of forming a semiconductor device including buried bit line

Methods for forming cobalt layers including introducing vaporized cobalt precursors and methods for manufacturing semiconductor devices using the same

Semiconductor devices including buried bit lines

Method of forming semiconductor device having stacked transistors

Semiconductor device and method of fabricating the same

Methods of forming semiconductor devices having stacked transistors

Semiconductor package

Semiconductor devices having stacked structures

Methods of forming field effect transistors having metal silicide gate electrodes

Methods of forming a double metal salicide layer and methods of fabricating semiconductor devices incorporating the same

Method for forming a silicided gate

Semiconductor device including fuse

Methods of fabricating semiconductor devices having a double metal salicide layer

Method of forming relatively continuous silicide layers for semiconductor devices

Method of forming semiconductor device having stacked transistors

Methods of forming self-aligned silicide layers using multiple thermal processes

Methods of manufacturing semiconductor devices including a copper-based conductive layer

Method forming ohmic contact layer and metal wiring in semiconductor device

Method of forming cobalt disilicide layer and method of manufacturing semiconductor device using the same

Methods of forming metal silicide layers by annealing metal layers using inert heat transferring gases established in a convection apparatus

POSTECH FOUNDATION

Process for selective metal deposition in holes of semiconductor device

HYNIX SEMICONDUCTOR INC

Method for forming metal layer of semiconductor device

NAVER CORP

Method and system for creating a site on a user terminal

HWANG SON-KWAN

Through-silicon via structures providing reduced solder spreading and methods of fabricating the same

YUN JONG-HO

Methods of forming semiconductor devices including landing pads formed by electroless plating