Inventor

JUNG SUG-WOO

KR27 patents

⚠️ This page may combine multiple inventors who share the name “JUNG SUG-WOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JUNG SUG-WOO

SAMSUNG ELECTRONICS CO LTD

Method of forming semiconductor device having stacked transistors

Semiconductor device including upper and lower transistors and interconnection between upper and lower transistors

Stacked semiconductor device and method of fabrication

Methods of forming silicide films with metal films in semiconductor devices and contacts including the same

Methods of fabricating a semiconductor device having MOS transistor with strained channel

Magnetoresistive random access memory device and method of manufacturing the same

Method of forming semiconductor device having stacked transistors

Methods of forming semiconductor devices having stacked transistors

Variable resistive memory device and method of manufacturing the same

Nickel salicide process with reduced dopant deactivation

Semiconductor devices having stacked structures

Methods of forming a double metal salicide layer and methods of fabricating semiconductor devices incorporating the same

Variable resistive memory device

Magnetoresistive random access memory device

Methods of fabricating semiconductor devices having a double metal salicide layer

Method of forming relatively continuous silicide layers for semiconductor devices

Method of forming semiconductor device having stacked transistors

Methods of forming self-aligned silicide layers using multiple thermal processes

Methods of forming metal silicide layers by annealing metal layers using inert heat transferring gases established in a convection apparatus

SAMSUNG DISPLAY CO LTD

Display device

Display device

Display device

Display device

Display device

Display device

OH GYU-HWAN

Non-volatile memory device having bottom electrode

Semiconductor memory device including buffer electrode