Inventor
RODOV VLADIMIR
JP65 patents
⚠️ This page may combine multiple inventors who share the name “RODOV VLADIMIR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APD SEMICONDUCTOR INC
10 patentsUS6448160B1Sep 10, 2002
Method of fabricating power rectifier device to vary operating parameters and resulting device
APD SEMICONDUCTOR INC99 citations98
US6399996B1Jun 4, 2002
Schottky diode having increased active surface area and method of fabrication
APD SEMICONDUCTOR INC99 citations98
US6420225B1Jul 16, 2002
Method of fabricating power rectifier device
APD SEMICONDUCTOR INC86 citations97
US6426541B2Jul 30, 2002
Schottky diode having increased forward current with improved reverse bias characteristics and method of fabrication
APD SEMICONDUCTOR INC55 citations96
US6404033B1Jun 11, 2002
Schottky diode having increased active surface area with improved reverse bias characteristics and method of fabrication
APD SEMICONDUCTOR INC68 citations96
US6743703B2Jun 1, 2004
Power diode having improved on resistance and breakdown voltage
APD SEMICONDUCTOR INC74 citations95
US6498367B1Dec 24, 2002
Discrete integrated circuit rectifier device
APD SEMICONDUCTOR INC88 citations95
US6515330B1Feb 4, 2003
Power device having vertical current path with enhanced pinch-off for current limiting
APD SEMICONDUCTOR INC40 citations92
US6979861B2Dec 27, 2005
Power device having reduced reverse bias leakage current
APD SEMICONDUCTOR INC25 citations91
US6537860B2Mar 25, 2003
Method of fabricating power VLSI diode devices
APD SEMICONDUCTOR INC19 citations82
PAKAL TECH INC
6 patentsUS11393901B2Jul 19, 2022
Cell layouts for MOS-gated devices for improved forward voltage
PAKAL TECH INC2 citations72
US12568639B2Mar 3, 2026
Insulated gate power device with epitaxially grown substrate layers
PAKAL TECH INC0 citations62
US11824092B2Nov 21, 2023
Insulated trench gates with dopants implanted through gate oxide
PAKAL TECH INC0 citations62
US11916138B2Feb 27, 2024
Etch stop layer for injecting carriers into drift layer for a vertical power device
PAKAL TECH INC0 citations52
US11757017B2Sep 12, 2023
Anti-parallel diode formed using damaged crystal structure in a vertical power device
PAKAL TECH INC0 citations52
US11114553B2Sep 7, 2021
Lateral insulated gate turn-off device with induced emitter
PAKAL TECH INC0 citations52
ANKOUDINOV ALEXEI
4 patentsUS8148748B2Apr 3, 2012
Adjustable field effect rectifier
ANKOUDINOV ALEXEI18 citations92
US8643055B2Feb 4, 2014
Series current limiter device
ANKOUDINOV ALEXEI9 citations83
US8421118B2Apr 16, 2013
Regenerative building block and diode bridge rectifier and methods
ANKOUDINOV ALEXEI11 citations83
US8633521B2Jan 21, 2014
Self-bootstrapping field effect diode structures and methods
ANKOUDINOV ALEXEI3 citations62
ADVANCED POWER DEVICES INC
3 patentsUS6624030B2Sep 23, 2003
Method of fabricating power rectifier device having a laterally graded P-N junction for a channel region
ADVANCED POWER DEVICES INC45 citations96
US6331455B1Dec 18, 2001
Power rectifier device and method of fabricating power rectifier devices
ADVANCED POWER DEVICES INC29 citations92
US6186408B1Feb 13, 2001
High cell density power rectifier
ADVANCED POWER DEVICES INC43 citations92
LUMINOUS INTENT INC
3 patentsSEMICOA SEMICONDUCTORS
3 patentsUS5932922AAug 3, 1999
Uniform current density and high current gain bipolar transistor
SEMICOA SEMICONDUCTORS18 citations92
US5554880ASep 10, 1996
Uniform current density and high current gain bipolar transistor
SEMICOA SEMICONDUCTORS18 citations74
US6103584AAug 15, 2000
Uniform current density and high current gain bipolar transistor
SEMICOA SEMICONDUCTORS3 citations63
INT RECTIFIER CORP
3 patentsUS4140560AFeb 20, 1979
Process for manufacture of fast recovery diodes
INT RECTIFIER CORP20 citations82
US4138280AFeb 6, 1979
Method of manufacture of zener diodes
INT RECTIFIER CORP19 citations82
US4168990ASep 25, 1979
Hot implantation at 1100°-1300° C. for forming non-gaussian impurity profile
INT RECTIFIER CORP10 citations67
TRW INC
3 patentsPAKAL TECH LLC
3 patentsUS10256331B2Apr 9, 2019
Insulated gate turn-off device having low capacitance and low saturation current
PAKAL TECH LLC1 citations61
US12249642B2Mar 11, 2025
Vertical insulated gate power switch with isolated base contact regions
PAKAL TECH LLC0 citations51
US11610987B2Mar 21, 2023
NPNP layered MOS-gated trench device having lowered operating voltage
PAKAL TECH LLC0 citations51
ESD PULSE INC
2 patents(unassigned)
1 patentADVANCED POWER DEVICES
1 patentDALECO RESEARCH DEV
1 patentMOLECULAR ELECTRONICS CORP
1 patentFUJIFILM CORP
1 patentPAKAL TECHNOLOGIES LLC
1 patentST MICROELECTRONICS INT NV
1 patentDIODES INC
1 patentHUGHES AIRCRAFT CO
1 patentST MICROELECTRONICS TOURS SAS
1 patentShowing the top 50 of 65 patents by PatentIndex Score.