Inventor
BEASOM JAMES DOUGLAS
US20 patents
⚠️ This page may combine multiple inventors who share the name “BEASOM JAMES DOUGLAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTERSIL INC
9 patentsUS7829954B2Nov 9, 2010
PMOS depletable drain extension made from NMOS dual depletable drain extensions
INTERSIL INC4 citations73
US7385246B2Jun 10, 2008
Depletable cathode low charge storage diode
INTERSIL INC5 citations73
US7285469B2Oct 23, 2007
Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns
INTERSIL INC4 citations73
US7759728B2Jul 20, 2010
Depletable cathode low charge storage diode
INTERSIL INC2 citations62
US7973360B2Jul 5, 2011
Depletable cathode low charge storage diode
INTERSIL INC0 citations52
US7547592B2Jun 16, 2009
PMOS depletable drain extension made from NMOS dual depletable drain extensions
INTERSIL INC0 citations52
US7473983B2Jan 6, 2009
Bipolar method and structure having improved BVCEO/RCS trade-off made with depletable collector columns
INTERSIL INC0 citations52
US7067383B2Jun 27, 2006
Method of making bipolar transistors and resulting product
INTERSIL INC0 citations52
US7098103B2Aug 29, 2006
Method and structure for non-single-polycrystalline capacitor in an integrated circuit
INTERSIL INC0 citations43
HARRIS CORP
8 patentsUS5770878AJun 23, 1998
Trench MOS gate device
HARRIS CORP175 citations98
US5801084ASep 1, 1998
Bonded wafer processing
HARRIS CORP95 citations95
US5780311AJul 14, 1998
bonded wafer processing
HARRIS CORP60 citations93
US5895953AApr 20, 1999
Ohmic contact to lightly doped islands from a conductive rapid diffusion buried layer
HARRIS CORP30 citations92
US5841169ANov 24, 1998
Integrated circuit containing devices dielectrically isolated and junction isolated from a substrate
HARRIS CORP20 citations92
US5650658AJul 22, 1997
Integration of high voltage lateral MOS devices in low voltage CMOS architecture using CMOS-compatible process steps
HARRIS CORP26 citations92
US5643821AJul 1, 1997
Method for making ohmic contact to lightly doped islands from a silicide buried layer and applications
HARRIS CORP26 citations92
US5770880AJun 23, 1998
P-collector H.V. PMOS switch VT adjusted source/drain
HARRIS CORP28 citations89