P

Inventor

SOHN YOUNG-SOO

KR84 patents
⚠️ This page may combine multiple inventors who share the name “SOHN YOUNG-SOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

33 patents
US9087602B2Jul 21, 2015

Volatile memory device capable of relieving disturbances of adjacent memory cells and refresh method thereof

SAMSUNG ELECTRONICS CO LTD86 citations98
US9087614B2Jul 21, 2015

Memory modules and memory systems

SAMSUNG ELECTRONICS CO LTD25 citations93
US7542507B2Jun 2, 2009

Decision feedback equalization input buffer

SAMSUNG ELECTRONICS CO LTD19 citations93
US7843239B2Nov 30, 2010

Dividing circuit and phase locked loop using the same

SAMSUNG ELECTRONICS CO LTD29 citations92
US7567103B2Jul 28, 2009

Apparatus for detecting and preventing a lock failure in a delay-locked loop

SAMSUNG ELECTRONICS CO LTD26 citations92
US7822111B2Oct 26, 2010

Receiving apparatus and method thereof

SAMSUNG ELECTRONICS CO LTD28 citations91
US9570132B2Feb 14, 2017

Address-remapped memory chip, memory module and memory system including the same

SAMSUNG ELECTRONICS CO LTD12 citations84
US9536586B2Jan 3, 2017

Memory device and memory system having the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US9235466B2Jan 12, 2016

Memory devices with selective error correction code

SAMSUNG ELECTRONICS CO LTD14 citations84
US7579890B2Aug 25, 2009

Duty detector and duty detection/correction circuit including the same and method thereof

SAMSUNG ELECTRONICS CO LTD17 citations84
US7479818B2Jan 20, 2009

Sense amplifier flip flop

SAMSUNG ELECTRONICS CO LTD13 citations84
US7439775B2Oct 21, 2008

Sense amplifier circuit and sense amplifier-based flip-flop having the same

SAMSUNG ELECTRONICS CO LTD12 citations84
US7339438B2Mar 4, 2008

Phase and delay locked loops and semiconductor memory device having the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US7135900B2Nov 14, 2006

Phase locked loop with adaptive loop bandwidth

SAMSUNG ELECTRONICS CO LTD11 citations84
US7449949B2Nov 11, 2008

Data amplifying circuit controllable with swing level according to operation mode and output driver including the same

SAMSUNG ELECTRONICS CO LTD5 citations74
US7143303B2Nov 28, 2006

Memory device for compensating for a clock skew causing a centering error and a method for compensating for the clock skew

SAMSUNG ELECTRONICS CO LTD8 citations74
US9875155B2Jan 23, 2018

Memory device for performing error correction code operation and redundancy repair operation

SAMSUNG ELECTRONICS CO LTD3 citations73
US9685218B2Jun 20, 2017

Memory device and memory system having the same

SAMSUNG ELECTRONICS CO LTD5 citations73
US9589674B2Mar 7, 2017

Method of operating memory device and methods of writing and reading data in memory device

SAMSUNG ELECTRONICS CO LTD3 citations73
US9355703B2May 31, 2016

Devices, systems and methods with improved refresh address generation

SAMSUNG ELECTRONICS CO LTD5 citations73
US9007856B2Apr 14, 2015

Repair control circuit and semiconductor memory device including the same

SAMSUNG ELECTRONICS CO LTD6 citations73
US11211102B2Dec 28, 2021

Method and memory system for optimizing on-die termination settings of multi-ranks in a multi-rank memory device

SAMSUNG ELECTRONICS CO LTD4 citations72
US11049584B2Jun 29, 2021

Integrated circuit memory devices having buffer dies and test interface circuits therein that support testing and methods of testing same

SAMSUNG ELECTRONICS CO LTD2 citations72
US10885950B2Jan 5, 2021

Method and memory system for optimizing on-die termination settings of multi-ranks in a multi-rank memory device

SAMSUNG ELECTRONICS CO LTD3 citations72
US9264039B2Feb 16, 2016

Circuit and method for on-die termination, and semiconductor memory device including the same

SAMSUNG ELECTRONICS CO LTD3 citations72
US11508420B2Nov 22, 2022

Memory device, memory system, and operation method of memory device

SAMSUNG ELECTRONICS CO LTD1 citations71
US11062744B2Jul 13, 2021

Memory device performing ZQ calibration, memory system, and operation method of memory device

SAMSUNG ELECTRONICS CO LTD2 citations71
US10983792B2Apr 20, 2021

Memory device that performs internal copy operation

SAMSUNG ELECTRONICS CO LTD0 citations63
US9412470B2Aug 9, 2016

Memory device

SAMSUNG ELECTRONICS CO LTD2 citations63
US9305631B1Apr 5, 2016

Profiling method of address access count of semiconductor device and profiling circuit using the same

SAMSUNG ELECTRONICS CO LTD1 citations63
US7808318B2Oct 5, 2010

Data amplifying circuit controllable with swing level according to operation mode and output driver including the same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7795905B2Sep 14, 2010

On die termination (ODT) circuit having improved high frequency performance

SAMSUNG ELECTRONICS CO LTD3 citations63
US7456676B2Nov 25, 2008

Charge pump circuit for semiconductor memory device

SAMSUNG ELECTRONICS CO LTD5 citations63

SAMSUNG DISPLAY CO LTD

7 patents

OH TAE-YOUNG

3 patents

SOHN YOUNG-SOO

2 patents

SAMSUNG ELECTRONICS LTD

1 patent

SON JONG-PIL

1 patent

POSTECH FOUNDATION

1 patent

SEOL HO-SEOK

1 patent

KIM DONG-MIN

1 patent

Showing the top 50 of 84 patents by PatentIndex Score.