P

Inventor

SCHWARZL SIEGFRIED

DE40 patents
⚠️ This page may combine multiple inventors who share the name “SCHWARZL SIEGFRIED”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

32 patents
US6458603B1Oct 1, 2002

Method of fabricating a micro-technical structure, and micro-technical component

INFINEON TECHNOLOGIES AG104 citations97
US6379978B2Apr 30, 2002

Memory cell configuration in which an electrical resistance of a memory element represents an information item and can be influenced by a magnetic field, and method for fabricating it

INFINEON TECHNOLOGIES AG98 citations96
US6351408B1Feb 26, 2002

Memory cell configuration

INFINEON TECHNOLOGIES AG61 citations96
US7078134B2Jul 18, 2006

Photolithographic mask having a structure region covered by a thin protective coating of only a few atomic layers and methods for the fabrication of the mask including ALCVD to form the thin protective coating

INFINEON TECHNOLOGIES AG22 citations92
US6577526B1Jun 10, 2003

Magnetoresistive element and the use thereof as storage element in a storage cell array

INFINEON TECHNOLOGIES AG21 citations92
US6574138B2Jun 3, 2003

Memory cell configuration and method for operating the configuration

INFINEON TECHNOLOGIES AG28 citations92
US7064439B1Jun 20, 2006

Integrated electrical circuit and method for fabricating it

INFINEON TECHNOLOGIES AG17 citations84
US6925002B2Aug 2, 2005

Semiconductor memory having mutually crossing word and bit lines, at which magnetoresistive memory cells are arranged

INFINEON TECHNOLOGIES AG18 citations84
US6717843B1Apr 6, 2004

Polyvalent, magnetoresistive write/read memory and method for writing and reading a memory of this type

INFINEON TECHNOLOGIES AG14 citations84
US6424562B1Jul 23, 2002

Read/write architecture for MRAM

INFINEON TECHNOLOGIES AG14 citations84
US7023063B2Apr 4, 2006

Arrangement of microstructures

INFINEON TECHNOLOGIES AG12 citations83
US6462980B2Oct 8, 2002

MRAM memory with drive logic arrangement

INFINEON TECHNOLOGIES AG16 citations81
US6930052B2Aug 16, 2005

Method for producing an integrated circuit having at least one metalicized surface

INFINEON TECHNOLOGIES AG7 citations74
US6872495B2Mar 29, 2005

Method for fabricating a lithographic reflection mask in particular for the patterning of a semiconductor wafer, and a reflection mask

INFINEON TECHNOLOGIES AG11 citations74
US6579729B2Jun 17, 2003

Memory cell configuration and method for fabricating it

INFINEON TECHNOLOGIES AG8 citations74
US7859648B2Dec 28, 2010

Passivation of multi-layer mirror for extreme ultraviolet lithography

INFINEON TECHNOLOGIES AG5 citations73
US7407729B2Aug 5, 2008

EUV magnetic contrast lithography mask and manufacture thereof

INFINEON TECHNOLOGIES AG7 citations73
US6686643B2Feb 3, 2004

Substrate with at least two metal structures deposited thereon, and method for fabricating the same

INFINEON TECHNOLOGIES AG7 citations73
US6605837B2Aug 12, 2003

Memory cell configuration and production method

INFINEON TECHNOLOGIES AG4 citations63
US6495873B2Dec 17, 2002

Magnetoresistive element and use thereof as a memory element in a memory cell configuration

INFINEON TECHNOLOGIES AG2 citations63
US7316933B2Jan 8, 2008

Method for producing an annular microstructure element

INFINEON TECHNOLOGIES AG2 citations62
US6943393B2Sep 13, 2005

Memory cell arrangement and method of fabricating it

INFINEON TECHNOLOGIES AG4 citations62
US6825098B2Nov 30, 2004

Method for fabricating microstructures and arrangement of microstructures

INFINEON TECHNOLOGIES AG4 citations62
US7029808B2Apr 18, 2006

Photosensitive coating material for a substrate and process for exposing the coated substrate

INFINEON TECHNOLOGIES AG6 citations61
US6630703B2Oct 7, 2003

Magnetoresistive memory cell configuration and method for its production

INFINEON TECHNOLOGIES AG5 citations61
US7626682B2Dec 1, 2009

Reticle stages for lithography systems and lithography methods

INFINEON TECHNOLOGIES AG1 citations52
USRE39799EAug 28, 2007

Memory cell array and method for manufacturing it

INFINEON TECHNOLOGIES AG1 citations52
US6849365B2Feb 1, 2005

Reflection mask for EUV-lithography and method for fabricating the reflection mask

INFINEON TECHNOLOGIES AG1 citations52
US7259441B2Aug 21, 2007

Hollow structure in an integrated circuit and method for producing such a hollow structure in an integrated circuit

INFINEON TECHNOLOGIES AG1 citations51
US7332444B2Feb 19, 2008

Method for smoothing areas in structures by utilizing the surface tension

INFINEON TECHNOLOGIES AG0 citations49
US7417736B2Aug 26, 2008

Method for determining a radiation power and an exposure apparatus

INFINEON TECHNOLOGIES AG0 citations41
US7341875B2Mar 11, 2008

Semiconductor memory device with a capacitor formed therein and a method for forming the same

INFINEON TECHNOLOGIES AG0 citations41

SIEMENS AG

5 patents

SCHWARZL SIEGFRIED

2 patents

QIMONDA AG

1 patent