Inventor
SCHWARZL SIEGFRIED
DE40 patents
⚠️ This page may combine multiple inventors who share the name “SCHWARZL SIEGFRIED”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
32 patentsUS6458603B1Oct 1, 2002
Method of fabricating a micro-technical structure, and micro-technical component
INFINEON TECHNOLOGIES AG104 citations97
US6379978B2Apr 30, 2002
Memory cell configuration in which an electrical resistance of a memory element represents an information item and can be influenced by a magnetic field, and method for fabricating it
INFINEON TECHNOLOGIES AG98 citations96
US6351408B1Feb 26, 2002
Memory cell configuration
INFINEON TECHNOLOGIES AG61 citations96
US7078134B2Jul 18, 2006
Photolithographic mask having a structure region covered by a thin protective coating of only a few atomic layers and methods for the fabrication of the mask including ALCVD to form the thin protective coating
INFINEON TECHNOLOGIES AG22 citations92
US6577526B1Jun 10, 2003
Magnetoresistive element and the use thereof as storage element in a storage cell array
INFINEON TECHNOLOGIES AG21 citations92
US6574138B2Jun 3, 2003
Memory cell configuration and method for operating the configuration
INFINEON TECHNOLOGIES AG28 citations92
US7064439B1Jun 20, 2006
Integrated electrical circuit and method for fabricating it
INFINEON TECHNOLOGIES AG17 citations84
US6925002B2Aug 2, 2005
Semiconductor memory having mutually crossing word and bit lines, at which magnetoresistive memory cells are arranged
INFINEON TECHNOLOGIES AG18 citations84
US6717843B1Apr 6, 2004
Polyvalent, magnetoresistive write/read memory and method for writing and reading a memory of this type
INFINEON TECHNOLOGIES AG14 citations84
US6424562B1Jul 23, 2002
Read/write architecture for MRAM
INFINEON TECHNOLOGIES AG14 citations84
US7023063B2Apr 4, 2006
Arrangement of microstructures
INFINEON TECHNOLOGIES AG12 citations83
US6462980B2Oct 8, 2002
MRAM memory with drive logic arrangement
INFINEON TECHNOLOGIES AG16 citations81
US6930052B2Aug 16, 2005
Method for producing an integrated circuit having at least one metalicized surface
INFINEON TECHNOLOGIES AG7 citations74
US6872495B2Mar 29, 2005
Method for fabricating a lithographic reflection mask in particular for the patterning of a semiconductor wafer, and a reflection mask
INFINEON TECHNOLOGIES AG11 citations74
US6579729B2Jun 17, 2003
Memory cell configuration and method for fabricating it
INFINEON TECHNOLOGIES AG8 citations74
US7859648B2Dec 28, 2010
Passivation of multi-layer mirror for extreme ultraviolet lithography
INFINEON TECHNOLOGIES AG5 citations73
US7407729B2Aug 5, 2008
EUV magnetic contrast lithography mask and manufacture thereof
INFINEON TECHNOLOGIES AG7 citations73
US6686643B2Feb 3, 2004
Substrate with at least two metal structures deposited thereon, and method for fabricating the same
INFINEON TECHNOLOGIES AG7 citations73
US6605837B2Aug 12, 2003
Memory cell configuration and production method
INFINEON TECHNOLOGIES AG4 citations63
US6495873B2Dec 17, 2002
Magnetoresistive element and use thereof as a memory element in a memory cell configuration
INFINEON TECHNOLOGIES AG2 citations63
US7316933B2Jan 8, 2008
Method for producing an annular microstructure element
INFINEON TECHNOLOGIES AG2 citations62
US6943393B2Sep 13, 2005
Memory cell arrangement and method of fabricating it
INFINEON TECHNOLOGIES AG4 citations62
US6825098B2Nov 30, 2004
Method for fabricating microstructures and arrangement of microstructures
INFINEON TECHNOLOGIES AG4 citations62
US7029808B2Apr 18, 2006
Photosensitive coating material for a substrate and process for exposing the coated substrate
INFINEON TECHNOLOGIES AG6 citations61
US6630703B2Oct 7, 2003
Magnetoresistive memory cell configuration and method for its production
INFINEON TECHNOLOGIES AG5 citations61
US7626682B2Dec 1, 2009
Reticle stages for lithography systems and lithography methods
INFINEON TECHNOLOGIES AG1 citations52
USRE39799EAug 28, 2007
Memory cell array and method for manufacturing it
INFINEON TECHNOLOGIES AG1 citations52
US6849365B2Feb 1, 2005
Reflection mask for EUV-lithography and method for fabricating the reflection mask
INFINEON TECHNOLOGIES AG1 citations52
US7259441B2Aug 21, 2007
Hollow structure in an integrated circuit and method for producing such a hollow structure in an integrated circuit
INFINEON TECHNOLOGIES AG1 citations51
US7332444B2Feb 19, 2008
Method for smoothing areas in structures by utilizing the surface tension
INFINEON TECHNOLOGIES AG0 citations49
US7417736B2Aug 26, 2008
Method for determining a radiation power and an exposure apparatus
INFINEON TECHNOLOGIES AG0 citations41
US7341875B2Mar 11, 2008
Semiconductor memory device with a capacitor formed therein and a method for forming the same
INFINEON TECHNOLOGIES AG0 citations41
SIEMENS AG
5 patentsUS6510078B2Jan 21, 2003
Memory cell array and method for manufacturing it
SIEMENS AG40 citations92
US5529950AJun 25, 1996
Method for manufacturing a cubically integrated circuit arrangement
SIEMENS AG53 citations92
US4581319AApr 8, 1986
Method for the manufacture of bipolar transistor structures with self-adjusting emitter and base regions for extreme high frequency circuits
SIEMENS AG37 citations91
US5262002ANov 16, 1993
Method for manufacturing a trench structure in a substrate
SIEMENS AG19 citations71
US5626279AMay 6, 1997
Method for fastening a first substrate on a second substrate and employment of said method for manufacturing a three-dimensional circuit arrangement
SIEMENS AG3 citations62