Inventor
CAMPIDELLI YVES
FR22 patents
⚠️ This page may combine multiple inventors who share the name “CAMPIDELLI YVES”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FRANCE TELECOM
7 patentsUS6537370B1Mar 25, 2003
Process for obtaining a layer of single-crystal germanium on a substrate of single-crystal silicon, and products obtained
FRANCE TELECOM158 citations98
US6117750ASep 12, 2000
Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively
FRANCE TELECOM123 citations98
US6429098B1Aug 6, 2002
Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively, and multilayer products obtained
FRANCE TELECOM42 citations96
US6399502B1Jun 4, 2002
Process for fabricating a planar heterostructure
FRANCE TELECOM31 citations92
US6255149B1Jul 3, 2001
Process for restricting interdiffusion in a semiconductor device with composite Si/SiGe gate
FRANCE TELECOM30 citations92
US6372581B1Apr 16, 2002
Process for nitriding the gate oxide layer of a semiconductor device and device obtained
FRANCE TELECOM19 citations84
US6690027B1Feb 10, 2004
Method for making a device comprising layers of planes of quantum dots
FRANCE TELECOM10 citations73
ST MICROELECTRONICS SA
4 patentsUS6596555B2Jul 22, 2003
Forming of quantum dots
ST MICROELECTRONICS SA27 citations91
US7129563B2Oct 31, 2006
Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity material
ST MICROELECTRONICS SA8 citations71
US7884352B2Feb 8, 2011
Single-crystal semiconductor layer with heteroatomic macronetwork
ST MICROELECTRONICS SA0 citations49
US7381267B2Jun 3, 2008
Heteroatomic single-crystal layers
ST MICROELECTRONICS SA0 citations49
ST MICROELECTRONICS CROLLES 2
3 patentsUS7547914B2Jun 16, 2009
Single-crystal layer on a dielectric layer
ST MICROELECTRONICS CROLLES 29 citations76
US7879679B2Feb 1, 2011
Electronic component manufacturing method
ST MICROELECTRONICS CROLLES 25 citations60
US8975154B2Mar 10, 2015
Process for producing at least one deep trench isolation
ST MICROELECTRONICS CROLLES 22 citations57
ST MICROELECTRONICS CROLLES 2 SAS
2 patentsUS10186605B1Jan 22, 2019
Cyclic epitaxy process to form air gap isolation for a bipolar transistor
ST MICROELECTRONICS CROLLES 2 SAS15 citations82
US9412589B2Aug 9, 2016
Method for fabricating NMOS and PMOS transistors on a substrate of the SOI, in particular FDSOI, type and corresponding integrated circuit
ST MICROELECTRONICS CROLLES 2 SAS1 citations47