Inventor
BENSAHEL DANIEL
FR32 patents
⚠️ This page may combine multiple inventors who share the name “BENSAHEL DANIEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FRANCE TELECOM
8 patentsUS6537370B1Mar 25, 2003
Process for obtaining a layer of single-crystal germanium on a substrate of single-crystal silicon, and products obtained
FRANCE TELECOM158 citations98
US6117750ASep 12, 2000
Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively
FRANCE TELECOM123 citations98
US6429098B1Aug 6, 2002
Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively, and multilayer products obtained
FRANCE TELECOM42 citations96
US6399502B1Jun 4, 2002
Process for fabricating a planar heterostructure
FRANCE TELECOM31 citations92
US6255149B1Jul 3, 2001
Process for restricting interdiffusion in a semiconductor device with composite Si/SiGe gate
FRANCE TELECOM30 citations92
US5876796AMar 2, 1999
Process for selectively depositing a refractory metal silicide on silicon, and silicon wafer metallized using this process
FRANCE TELECOM44 citations90
US6372581B1Apr 16, 2002
Process for nitriding the gate oxide layer of a semiconductor device and device obtained
FRANCE TELECOM19 citations84
US6690027B1Feb 10, 2004
Method for making a device comprising layers of planes of quantum dots
FRANCE TELECOM10 citations73
ST MICROELECTRONICS SA
8 patentsUS6989570B2Jan 24, 2006
Strained-channel isolated-gate field effect transistor, process for making same and resulting integrated circuit
ST MICROELECTRONICS SA24 citations93
US6596555B2Jul 22, 2003
Forming of quantum dots
ST MICROELECTRONICS SA27 citations91
US7129563B2Oct 31, 2006
Method of fabricating a semiconductor device comprising a gate dielectric made of high dielectric permittivity material
ST MICROELECTRONICS SA8 citations71
US7033438B2Apr 25, 2006
Growth of a single-crystal region of a III-V compound on a single-crystal silicon substrate
ST MICROELECTRONICS SA5 citations63
US6969661B2Nov 29, 2005
Method for forming a localized region of a material difficult to etch
ST MICROELECTRONICS SA2 citations62
US7279404B2Oct 9, 2007
Process for fabricating strained layers of silicon or of a silicon/germanium alloy
ST MICROELECTRONICS SA1 citations51
US7884352B2Feb 8, 2011
Single-crystal semiconductor layer with heteroatomic macronetwork
ST MICROELECTRONICS SA0 citations49
US7381267B2Jun 3, 2008
Heteroatomic single-crystal layers
ST MICROELECTRONICS SA0 citations49
SOITEC SILICON ON INSULATOR
5 patentsUS6953736B2Oct 11, 2005
Process for transferring a layer of strained semiconductor material
SOITEC SILICON ON INSULATOR55 citations96
US7534701B2May 19, 2009
Process for transferring a layer of strained semiconductor material
SOITEC SILICON ON INSULATOR24 citations93
US7338883B2Mar 4, 2008
Process for transferring a layer of strained semiconductor material
SOITEC SILICON ON INSULATOR4 citations74
US8049224B2Nov 1, 2011
Process for transferring a layer of strained semiconductor material
SOITEC SILICON ON INSULATOR0 citations52
US7803694B2Sep 28, 2010
Process for transferring a layer of strained semiconductor material
SOITEC SILICON ON INSULATOR0 citations52
COMMISSARIAT ENERGIE ATOMIQUE
3 patentsUS4263056AApr 21, 1981
Method for the manufacture of light emitting and/or photodetective diodes
COMMISSARIAT ENERGIE ATOMIQUE13 citations72
US4229237AOct 21, 1980
Method of fabrication of semiconductor components having optoelectronic conversion properties
COMMISSARIAT ENERGIE ATOMIQUE11 citations66
US6551698B1Apr 22, 2003
Method for treating a silicon substrate, by nitriding, to form a thin insulating layer
COMMISSARIAT ENERGIE ATOMIQUE3 citations62