Inventor
CLARK ROBERT D
US77 patents
⚠️ This page may combine multiple inventors who share the name “CLARK ROBERT D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOKYO ELECTRON LTD
31 patentsUS7767262B2Aug 3, 2010
Nitrogen profile engineering in nitrided high dielectric constant films
TOKYO ELECTRON LTD519 citations99
US7651961B2Jan 26, 2010
Method for forming strained silicon nitride films and a device containing such films
TOKYO ELECTRON LTD528 citations99
US10522343B2Dec 31, 2019
Method of enhancing high-k film nucleation rate and electrical mobility in a semiconductor device by microwave plasma treatment
TOKYO ELECTRON LTD40 citations94
US7939455B2May 10, 2011
Method for forming strained silicon nitride films and a device containing such films
TOKYO ELECTRON LTD33 citations93
US7772073B2Aug 10, 2010
Semiconductor device containing a buried threshold voltage adjustment layer and method of forming
TOKYO ELECTRON LTD35 citations93
US7531452B2May 12, 2009
Strained metal silicon nitride films and method of forming
TOKYO ELECTRON LTD20 citations93
US10283369B2May 7, 2019
Atomic layer etching using a boron-containing gas and hydrogen fluoride gas
TOKYO ELECTRON LTD5 citations84
US8865581B2Oct 21, 2014
Hybrid gate last integration scheme for multi-layer high-k gate stacks
TOKYO ELECTRON LTD13 citations84
US8003503B1Aug 23, 2011
Method of integrating stress into a gate stack
TOKYO ELECTRON LTD14 citations84
US7833913B2Nov 16, 2010
Method of forming crystallographically stabilized doped hafnium zirconium based films
TOKYO ELECTRON LTD12 citations84
US7790628B2Sep 7, 2010
Method of forming high dielectric constant films using a plurality of oxidation sources
TOKYO ELECTRON LTD12 citations84
US7759746B2Jul 20, 2010
Semiconductor device with gate dielectric containing aluminum and mixed rare earth elements
TOKYO ELECTRON LTD10 citations84
US7755128B2Jul 13, 2010
Semiconductor device containing crystallographically stabilized doped hafnium zirconium based materials
TOKYO ELECTRON LTD11 citations84
US7713868B2May 11, 2010
Strained metal nitride films and method of forming
TOKYO ELECTRON LTD16 citations84
US7494937B2Feb 24, 2009
Strained metal silicon nitride films and method of forming
TOKYO ELECTRON LTD19 citations84
US7741202B2Jun 22, 2010
Method of controlling interface layer thickness in high dielectric constant film structures including growing and annealing a chemical oxide layer
TOKYO ELECTRON LTD7 citations74
US10014213B2Jul 3, 2018
Selective bottom-up metal feature filling for interconnects
TOKYO ELECTRON LTD4 citations73
US9837304B2Dec 5, 2017
Sidewall protection scheme for contact formation
TOKYO ELECTRON LTD2 citations73
US9978649B2May 22, 2018
Solid source doping for source and drain extension doping
TOKYO ELECTRON LTD2 citations71
US9899224B2Feb 20, 2018
Method of controlling solid phase diffusion of boron dopants to form ultra-shallow doping regions
TOKYO ELECTRON LTD4 citations65
US12532719B2Jan 20, 2026
Barrier schemes for metallization using manganese and graphene
TOKYO ELECTRON LTD0 citations63
US12421604B2Sep 23, 2025
Ultra-shallow dopant and ohmic contact regions by solid state diffusion
TOKYO ELECTRON LTD0 citations63
US12362304B2Jul 15, 2025
Bonding layer and process of making
TOKYO ELECTRON LTD0 citations63
US12261209B2Mar 25, 2025
Replacement channel 2D material integration
TOKYO ELECTRON LTD0 citations63
US11967640B2Apr 23, 2024
Crystalline dielectric systems for interconnect circuit manufacturing
TOKYO ELECTRON LTD0 citations63
US11942536B2Mar 26, 2024
Semiconductor device having channel structure with 2D material
TOKYO ELECTRON LTD0 citations63
US9012316B2Apr 21, 2015
Method for forming ultra-shallow boron doping regions by solid phase diffusion
TOKYO ELECTRON LTD3 citations63
US8012442B2Sep 6, 2011
Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition
TOKYO ELECTRON LTD4 citations63
US7964515B2Jun 21, 2011
Method of forming high-dielectric constant films for semiconductor devices
TOKYO ELECTRON LTD5 citations63
US7816737B2Oct 19, 2010
Semiconductor device with gate dielectric containing mixed rare earth elements
TOKYO ELECTRON LTD4 citations63
US10923392B2Feb 16, 2021
Interconnect structure and method of forming the same
TOKYO ELECTRON LTD1 citations62
CLARK ROBERT D
12 patentsUS8580664B2Nov 12, 2013
Method for forming ultra-shallow boron doping regions by solid phase diffusion
CLARK ROBERT D43 citations94
US8481341B2Jul 9, 2013
Epitaxial film growth in retrograde wells for semiconductor devices
CLARK ROBERT D24 citations93
US5090600AFeb 25, 1992
Liquid pressure opened pouring spout
CLARK ROBERT D29 citations93
US8877620B2Nov 4, 2014
Method for forming ultra-shallow doping regions by solid phase diffusion
CLARK ROBERT D6 citations84
US8569158B2Oct 29, 2013
Method for forming ultra-shallow doping regions by solid phase diffusion
CLARK ROBERT D12 citations84
US8313994B2Nov 20, 2012
Method for forming a high-K gate stack with reduced effective oxide thickness
CLARK ROBERT D13 citations84
US7165275B2Jan 23, 2007
Toilet mounting assembly
CLARK ROBERT D14 citations84
US8865538B2Oct 21, 2014
Method of integrating buried threshold voltage adjustment layers for CMOS processing
CLARK ROBERT D5 citations73
US8440520B2May 14, 2013
Diffused cap layers for modifying high-k gate dielectrics and interface layers
CLARK ROBERT D5 citations73
US8962078B2Feb 24, 2015
Method for depositing dielectric films
CLARK ROBERT D3 citations63
US8334183B2Dec 18, 2012
Semiconductor device containing a buried threshold voltage adjustment layer and method of forming
CLARK ROBERT D3 citations63
US8097300B2Jan 17, 2012
Method of forming mixed rare earth oxynitride and aluminum oxynitride films by atomic layer deposition
CLARK ROBERT D3 citations63
TRIPOS INC
3 patentsUS6185506B1Feb 6, 2001
Method for selecting an optimally diverse library of small molecules based on validated molecular structural descriptors
TRIPOS INC79 citations93
US6535819B1Mar 18, 2003
Optimal dissimilarity method for choosing distinctive items of information from a large body of information
TRIPOS INC14 citations84
US7184893B2Feb 27, 2007
Method for selecting an optimally diverse library of small molecules based on validated molecular structural descriptors
TRIPOS INC5 citations73
AIR PROD & CHEM
2 patents(unassigned)
1 patentXEROX CORP
1 patentShowing the top 50 of 77 patents by PatentIndex Score.