P

Inventor

CLARK ROBERT D

US77 patents
⚠️ This page may combine multiple inventors who share the name “CLARK ROBERT D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOKYO ELECTRON LTD

31 patents
US7767262B2Aug 3, 2010

Nitrogen profile engineering in nitrided high dielectric constant films

TOKYO ELECTRON LTD519 citations99
US7651961B2Jan 26, 2010

Method for forming strained silicon nitride films and a device containing such films

TOKYO ELECTRON LTD528 citations99
US10522343B2Dec 31, 2019

Method of enhancing high-k film nucleation rate and electrical mobility in a semiconductor device by microwave plasma treatment

TOKYO ELECTRON LTD40 citations94
US7939455B2May 10, 2011

Method for forming strained silicon nitride films and a device containing such films

TOKYO ELECTRON LTD33 citations93
US7772073B2Aug 10, 2010

Semiconductor device containing a buried threshold voltage adjustment layer and method of forming

TOKYO ELECTRON LTD35 citations93
US7531452B2May 12, 2009

Strained metal silicon nitride films and method of forming

TOKYO ELECTRON LTD20 citations93
US10283369B2May 7, 2019

Atomic layer etching using a boron-containing gas and hydrogen fluoride gas

TOKYO ELECTRON LTD5 citations84
US8865581B2Oct 21, 2014

Hybrid gate last integration scheme for multi-layer high-k gate stacks

TOKYO ELECTRON LTD13 citations84
US8003503B1Aug 23, 2011

Method of integrating stress into a gate stack

TOKYO ELECTRON LTD14 citations84
US7833913B2Nov 16, 2010

Method of forming crystallographically stabilized doped hafnium zirconium based films

TOKYO ELECTRON LTD12 citations84
US7790628B2Sep 7, 2010

Method of forming high dielectric constant films using a plurality of oxidation sources

TOKYO ELECTRON LTD12 citations84
US7759746B2Jul 20, 2010

Semiconductor device with gate dielectric containing aluminum and mixed rare earth elements

TOKYO ELECTRON LTD10 citations84
US7755128B2Jul 13, 2010

Semiconductor device containing crystallographically stabilized doped hafnium zirconium based materials

TOKYO ELECTRON LTD11 citations84
US7713868B2May 11, 2010

Strained metal nitride films and method of forming

TOKYO ELECTRON LTD16 citations84
US7494937B2Feb 24, 2009

Strained metal silicon nitride films and method of forming

TOKYO ELECTRON LTD19 citations84
US7741202B2Jun 22, 2010

Method of controlling interface layer thickness in high dielectric constant film structures including growing and annealing a chemical oxide layer

TOKYO ELECTRON LTD7 citations74
US10014213B2Jul 3, 2018

Selective bottom-up metal feature filling for interconnects

TOKYO ELECTRON LTD4 citations73
US9837304B2Dec 5, 2017

Sidewall protection scheme for contact formation

TOKYO ELECTRON LTD2 citations73
US9978649B2May 22, 2018

Solid source doping for source and drain extension doping

TOKYO ELECTRON LTD2 citations71
US9899224B2Feb 20, 2018

Method of controlling solid phase diffusion of boron dopants to form ultra-shallow doping regions

TOKYO ELECTRON LTD4 citations65
US12532719B2Jan 20, 2026

Barrier schemes for metallization using manganese and graphene

TOKYO ELECTRON LTD0 citations63
US12421604B2Sep 23, 2025

Ultra-shallow dopant and ohmic contact regions by solid state diffusion

TOKYO ELECTRON LTD0 citations63
US12362304B2Jul 15, 2025

Bonding layer and process of making

TOKYO ELECTRON LTD0 citations63
US12261209B2Mar 25, 2025

Replacement channel 2D material integration

TOKYO ELECTRON LTD0 citations63
US11967640B2Apr 23, 2024

Crystalline dielectric systems for interconnect circuit manufacturing

TOKYO ELECTRON LTD0 citations63
US11942536B2Mar 26, 2024

Semiconductor device having channel structure with 2D material

TOKYO ELECTRON LTD0 citations63
US9012316B2Apr 21, 2015

Method for forming ultra-shallow boron doping regions by solid phase diffusion

TOKYO ELECTRON LTD3 citations63
US8012442B2Sep 6, 2011

Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition

TOKYO ELECTRON LTD4 citations63
US7964515B2Jun 21, 2011

Method of forming high-dielectric constant films for semiconductor devices

TOKYO ELECTRON LTD5 citations63
US7816737B2Oct 19, 2010

Semiconductor device with gate dielectric containing mixed rare earth elements

TOKYO ELECTRON LTD4 citations63
US10923392B2Feb 16, 2021

Interconnect structure and method of forming the same

TOKYO ELECTRON LTD1 citations62

CLARK ROBERT D

12 patents

TRIPOS INC

3 patents

AIR PROD & CHEM

2 patents

(unassigned)

1 patent

XEROX CORP

1 patent

Showing the top 50 of 77 patents by PatentIndex Score.