Inventor

KWAK JOON-SEOP

KR36 patents

⚠️ This page may combine multiple inventors who share the name “KWAK JOON-SEOP”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KWAK JOON-SEOP

SAMSUNG ELECTRO MECH

Method for fabricating semiconductor light emitting device

GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same

Reflective electrode and compound semiconductor light emitting device including the same

Light emitting device and method of manufacturing the same

Multi-layer electrode and compound semiconductor light emitting device comprising the same

Semiconductor light emitting diode having textured structure and method of manufacturing the same

Semiconductor laser diode for controlling width of carrier inflow path

Method for manufacturing semiconductor laser diode

Semiconductor laser diode including ridge wave guide and method of manufacturing the same

Semiconductor laser diode with current restricting layer and fabrication method thereof

GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same

Semiconductor laser diode with current restricting layer and fabrication method thereof

Light emitting device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD

Reflective electrode and compound semiconductor light emitting device including the same

Top-emitting nitride-based light emitting device and method of manufacturing the same

Semiconductor laser diode and semiconductor laser diode assembly containing the same

Electrode structure, semiconductor light-emitting device having the same and method of manufacturing the same

Semiconductor laser device with a rounded base mesa structure

SnAgAu solder bumps, method of manufacturing the same, and method of bonding light emitting device using the same

Submount of semiconductor laser diode, method of manufacturing the same, and semiconductor laser diode assembly using the submount

Top-emitting nitride-based light emitting device and method of manufacturing the same

Semiconductor device having superlattice semiconductor layer and method of manufacturing the same

Light emitting diode and method for fabricating the same

Nitride semiconductor light emitting device and method of manufacturing the same

Light emitting device assembly

KWAK JOON-SEOP

Light emitting diode and method for fabricating the same

Light emitting diode and method for fabricating the same

Light emitting device and method of manufacturing the same

Method for manufacturing of light emitting device using GaN series III-V group nitride semiconductor material

Light emitting diode and method for fabricating the same

KWAK JOON SEOP

LED with uniform current spreading and method of fabrication

Low resistance electrode and compound semiconductor light emitting device including the same

SAMSUNG LED CO LTD

Low resistance electrode and compound semiconductor light emitting device including the same

Nitride semiconductor light emitting device and manufacturing method of the same

KWANGJU INST SCI & TECH

GaN-based III—V group compound semiconductor device and p-type electrode for the same

INDUSTRY ACADEMIC COOPERATION FOUNDATION OF SUNCHON NATIONAL UNIV

Method for manufacturing micro array light emitting diode and lighting device