Inventor
HSU CHING-HSIANG
TW146 patents
⚠️ This page may combine multiple inventors who share the name “HSU CHING-HSIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
EMEMORY TECHNOLOGY INC
21 patentsUS6678190B2Jan 13, 2004
Single poly embedded eprom
EMEMORY TECHNOLOGY INC138 citations99
US6920067B2Jul 19, 2005
Integrated circuit embedded with single-poly non-volatile memory
EMEMORY TECHNOLOGY INC69 citations98
US6418060B1Jul 9, 2002
Method of programming and erasing non-volatile memory cells
EMEMORY TECHNOLOGY INC101 citations98
US7903472B2Mar 8, 2011
Operating method of non-volatile memory
EMEMORY TECHNOLOGY INC40 citations96
US6617637B1Sep 9, 2003
Electrically erasable programmable logic device
EMEMORY TECHNOLOGY INC57 citations96
US6888190B2May 3, 2005
EEPROM with source line voltage stabilization mechanism
EMEMORY TECHNOLOGY INC36 citations93
US6847087B2Jan 25, 2005
Bi-directional Fowler-Nordheim tunneling flash memory
EMEMORY TECHNOLOGY INC20 citations93
US6801456B1Oct 5, 2004
Method for programming, erasing and reading a flash memory cell
EMEMORY TECHNOLOGY INC35 citations93
US6717206B2Apr 6, 2004
Structure of an embedded channel write/erase flash memory cell and fabricating method thereof
EMEMORY TECHNOLOGY INC17 citations93
US6711064B2Mar 23, 2004
Single-poly EEPROM
EMEMORY TECHNOLOGY INC31 citations93
US6654284B2Nov 25, 2003
Channel write/erase flash memory cell and its manufacturing method
EMEMORY TECHNOLOGY INC23 citations93
US6504763B1Jan 7, 2003
Nonvolatile semiconductor memory capable of random programming
EMEMORY TECHNOLOGY INC22 citations93
US6501685B2Dec 31, 2002
Channel write/erase flash memory cell and its manufacturing method
EMEMORY TECHNOLOGY INC43 citations93
US6489202B1Dec 3, 2002
Structure of an embedded channel write-erase flash memory cell and fabricating method thereof
EMEMORY TECHNOLOGY INC44 citations93
US6441443B1Aug 27, 2002
Embedded type flash memory structure and method for operating the same
EMEMORY TECHNOLOGY INC48 citations93
US7262457B2Aug 28, 2007
Non-volatile memory cell
EMEMORY TECHNOLOGY INC33 citations92
US7250654B2Jul 31, 2007
Non-volatile memory device
EMEMORY TECHNOLOGY INC48 citations92
US7172940B1Feb 6, 2007
Method of fabricating an embedded non-volatile memory device
EMEMORY TECHNOLOGY INC39 citations92
US6914825B2Jul 5, 2005
Semiconductor memory device having improved data retention
EMEMORY TECHNOLOGY INC30 citations92
US6490196B1Dec 3, 2002
Method for operating a nonvolatile memory having embedded word lines
EMEMORY TECHNOLOGY INC17 citations92
US6448607B1Sep 10, 2002
Nonvolatile memory having embedded word lines
EMEMORY TECHNOLOGY INC42 citations92
TAIWAN SEMICONDUCTOR MFG
15 patentsUS5851881ADec 22, 1998
Method of making monos flash memory for multi-level logic
TAIWAN SEMICONDUCTOR MFG140 citations99
US5714412AFeb 3, 1998
Multi-level, split-gate, flash memory cell and method of manufacture thereof
TAIWAN SEMICONDUCTOR MFG137 citations99
US6281545B1Aug 28, 2001
Multi-level, split-gate, flash memory cell
TAIWAN SEMICONDUCTOR MFG98 citations98
US5877523AMar 2, 1999
Multi-level split- gate flash memory cell
TAIWAN SEMICONDUCTOR MFG114 citations98
US5679591AOct 21, 1997
Method of making raised-bitline contactless trenched flash memory cell
TAIWAN SEMICONDUCTOR MFG120 citations98
US5818085AOct 6, 1998
Body contact for a MOSFET device fabricated in an SOI layer
TAIWAN SEMICONDUCTOR MFG53 citations96
US5804858ASep 8, 1998
Body contacted SOI MOSFET
TAIWAN SEMICONDUCTOR MFG65 citations96
US5591650AJan 7, 1997
Method of making a body contacted SOI MOSFET
TAIWAN SEMICONDUCTOR MFG55 citations96
US5573961ANov 12, 1996
Method of making a body contact for a MOSFET device fabricated in an SOI layer
TAIWAN SEMICONDUCTOR MFG66 citations96
US5504031AApr 2, 1996
Elevated source/drain with solid phase diffused source/drain extension for deep sub-micron mosfets
TAIWAN SEMICONDUCTOR MFG60 citations96
US6429081B1Aug 6, 2002
Parasitic surface transfer transistor cell (PASTT cell) for bi-level and multi-level NAND flash memory
TAIWAN SEMICONDUCTOR MFG79 citations94
US5693974ADec 2, 1997
Elevated source/drain with solid phase diffused source/drain extension for deep sub-micron MOSFETS
TAIWAN SEMICONDUCTOR MFG25 citations93
US6166410ADec 26, 2000
MONOS flash memory for multi-level logic and method thereof
TAIWAN SEMICONDUCTOR MFG40 citations92
US5834806ANov 10, 1998
Raised-bitline, contactless, trenched, flash memory cell
TAIWAN SEMICONDUCTOR MFG22 citations92
US5705839AJan 6, 1998
Gate spacer to control the base width of a lateral bipolar junction transistor using SOI technology
TAIWAN SEMICONDUCTOR MFG20 citations92
UNITED MICROELECTRONICS CORP
5 patentsUS5726070AMar 10, 1998
Silicon-rich tunnel oxide formed by oxygen implantation for flash EEPROM
UNITED MICROELECTRONICS CORP19 citations93
US5521105AMay 28, 1996
Method of forming counter-doped island in power MOSFET
UNITED MICROELECTRONICS CORP119 citations93
US5851879ADec 22, 1998
Method for fabricating compact contactless trenched flash memory cell
UNITED MICROELECTRONICS CORP29 citations92
US5796141AAug 18, 1998
Compact contactless trenched flash memory cell
UNITED MICROELECTRONICS CORP18 citations92
US5796142AAug 18, 1998
SOI compact contactless flash memory cell
UNITED MICROELECTRONICS CORP28 citations92
IBM
4 patentsUS5567635AOct 22, 1996
Method of making a three dimensional trench EEPROM cell structure
IBM172 citations97
US5315142AMay 24, 1994
High performance trench EEPROM cell
IBM154 citations97
US5231299AJul 27, 1993
Structure and fabrication method for EEPROM memory cell with selective channel implants
IBM78 citations96
US5331188AJul 19, 1994
Non-volatile DRAM cell
IBM84 citations95
SHIN ZU SHING CO LTD
2 patentsPROGRAMMABLE MICROELECTRONICS
1 patentFAR EASTONE TELECOMM CO LTD
1 patentGENMONT BIOTECH INC
1 patentShowing the top 50 of 146 patents by PatentIndex Score.