P

Inventor

HSU CHING-HSIANG

TW146 patents
⚠️ This page may combine multiple inventors who share the name “HSU CHING-HSIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

EMEMORY TECHNOLOGY INC

21 patents
US6678190B2Jan 13, 2004

Single poly embedded eprom

EMEMORY TECHNOLOGY INC138 citations99
US6920067B2Jul 19, 2005

Integrated circuit embedded with single-poly non-volatile memory

EMEMORY TECHNOLOGY INC69 citations98
US6418060B1Jul 9, 2002

Method of programming and erasing non-volatile memory cells

EMEMORY TECHNOLOGY INC101 citations98
US7903472B2Mar 8, 2011

Operating method of non-volatile memory

EMEMORY TECHNOLOGY INC40 citations96
US6617637B1Sep 9, 2003

Electrically erasable programmable logic device

EMEMORY TECHNOLOGY INC57 citations96
US6888190B2May 3, 2005

EEPROM with source line voltage stabilization mechanism

EMEMORY TECHNOLOGY INC36 citations93
US6847087B2Jan 25, 2005

Bi-directional Fowler-Nordheim tunneling flash memory

EMEMORY TECHNOLOGY INC20 citations93
US6801456B1Oct 5, 2004

Method for programming, erasing and reading a flash memory cell

EMEMORY TECHNOLOGY INC35 citations93
US6717206B2Apr 6, 2004

Structure of an embedded channel write/erase flash memory cell and fabricating method thereof

EMEMORY TECHNOLOGY INC17 citations93
US6711064B2Mar 23, 2004

Single-poly EEPROM

EMEMORY TECHNOLOGY INC31 citations93
US6654284B2Nov 25, 2003

Channel write/erase flash memory cell and its manufacturing method

EMEMORY TECHNOLOGY INC23 citations93
US6504763B1Jan 7, 2003

Nonvolatile semiconductor memory capable of random programming

EMEMORY TECHNOLOGY INC22 citations93
US6501685B2Dec 31, 2002

Channel write/erase flash memory cell and its manufacturing method

EMEMORY TECHNOLOGY INC43 citations93
US6489202B1Dec 3, 2002

Structure of an embedded channel write-erase flash memory cell and fabricating method thereof

EMEMORY TECHNOLOGY INC44 citations93
US6441443B1Aug 27, 2002

Embedded type flash memory structure and method for operating the same

EMEMORY TECHNOLOGY INC48 citations93
US7262457B2Aug 28, 2007

Non-volatile memory cell

EMEMORY TECHNOLOGY INC33 citations92
US7250654B2Jul 31, 2007

Non-volatile memory device

EMEMORY TECHNOLOGY INC48 citations92
US7172940B1Feb 6, 2007

Method of fabricating an embedded non-volatile memory device

EMEMORY TECHNOLOGY INC39 citations92
US6914825B2Jul 5, 2005

Semiconductor memory device having improved data retention

EMEMORY TECHNOLOGY INC30 citations92
US6490196B1Dec 3, 2002

Method for operating a nonvolatile memory having embedded word lines

EMEMORY TECHNOLOGY INC17 citations92
US6448607B1Sep 10, 2002

Nonvolatile memory having embedded word lines

EMEMORY TECHNOLOGY INC42 citations92

TAIWAN SEMICONDUCTOR MFG

15 patents
US5851881ADec 22, 1998

Method of making monos flash memory for multi-level logic

TAIWAN SEMICONDUCTOR MFG140 citations99
US5714412AFeb 3, 1998

Multi-level, split-gate, flash memory cell and method of manufacture thereof

TAIWAN SEMICONDUCTOR MFG137 citations99
US6281545B1Aug 28, 2001

Multi-level, split-gate, flash memory cell

TAIWAN SEMICONDUCTOR MFG98 citations98
US5877523AMar 2, 1999

Multi-level split- gate flash memory cell

TAIWAN SEMICONDUCTOR MFG114 citations98
US5679591AOct 21, 1997

Method of making raised-bitline contactless trenched flash memory cell

TAIWAN SEMICONDUCTOR MFG120 citations98
US5818085AOct 6, 1998

Body contact for a MOSFET device fabricated in an SOI layer

TAIWAN SEMICONDUCTOR MFG53 citations96
US5804858ASep 8, 1998

Body contacted SOI MOSFET

TAIWAN SEMICONDUCTOR MFG65 citations96
US5591650AJan 7, 1997

Method of making a body contacted SOI MOSFET

TAIWAN SEMICONDUCTOR MFG55 citations96
US5573961ANov 12, 1996

Method of making a body contact for a MOSFET device fabricated in an SOI layer

TAIWAN SEMICONDUCTOR MFG66 citations96
US5504031AApr 2, 1996

Elevated source/drain with solid phase diffused source/drain extension for deep sub-micron mosfets

TAIWAN SEMICONDUCTOR MFG60 citations96
US6429081B1Aug 6, 2002

Parasitic surface transfer transistor cell (PASTT cell) for bi-level and multi-level NAND flash memory

TAIWAN SEMICONDUCTOR MFG79 citations94
US5693974ADec 2, 1997

Elevated source/drain with solid phase diffused source/drain extension for deep sub-micron MOSFETS

TAIWAN SEMICONDUCTOR MFG25 citations93
US6166410ADec 26, 2000

MONOS flash memory for multi-level logic and method thereof

TAIWAN SEMICONDUCTOR MFG40 citations92
US5834806ANov 10, 1998

Raised-bitline, contactless, trenched, flash memory cell

TAIWAN SEMICONDUCTOR MFG22 citations92
US5705839AJan 6, 1998

Gate spacer to control the base width of a lateral bipolar junction transistor using SOI technology

TAIWAN SEMICONDUCTOR MFG20 citations92

UNITED MICROELECTRONICS CORP

5 patents

IBM

4 patents

SHIN ZU SHING CO LTD

2 patents

PROGRAMMABLE MICROELECTRONICS

1 patent

FAR EASTONE TELECOMM CO LTD

1 patent

GENMONT BIOTECH INC

1 patent

Showing the top 50 of 146 patents by PatentIndex Score.