Inventor
YANG CHING-SUNG
TW69 patents
⚠️ This page may combine multiple inventors who share the name “YANG CHING-SUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
EMEMORY TECHNOLOGY INC
28 patentsUS6678190B2Jan 13, 2004
Single poly embedded eprom
EMEMORY TECHNOLOGY INC138 citations99
US6418060B1Jul 9, 2002
Method of programming and erasing non-volatile memory cells
EMEMORY TECHNOLOGY INC101 citations98
US6617637B1Sep 9, 2003
Electrically erasable programmable logic device
EMEMORY TECHNOLOGY INC57 citations96
US6888190B2May 3, 2005
EEPROM with source line voltage stabilization mechanism
EMEMORY TECHNOLOGY INC36 citations93
US6847087B2Jan 25, 2005
Bi-directional Fowler-Nordheim tunneling flash memory
EMEMORY TECHNOLOGY INC20 citations93
US6717206B2Apr 6, 2004
Structure of an embedded channel write/erase flash memory cell and fabricating method thereof
EMEMORY TECHNOLOGY INC17 citations93
US6711064B2Mar 23, 2004
Single-poly EEPROM
EMEMORY TECHNOLOGY INC31 citations93
US6654284B2Nov 25, 2003
Channel write/erase flash memory cell and its manufacturing method
EMEMORY TECHNOLOGY INC23 citations93
US6504763B1Jan 7, 2003
Nonvolatile semiconductor memory capable of random programming
EMEMORY TECHNOLOGY INC22 citations93
US6501685B2Dec 31, 2002
Channel write/erase flash memory cell and its manufacturing method
EMEMORY TECHNOLOGY INC43 citations93
US6489202B1Dec 3, 2002
Structure of an embedded channel write-erase flash memory cell and fabricating method thereof
EMEMORY TECHNOLOGY INC44 citations93
US6441443B1Aug 27, 2002
Embedded type flash memory structure and method for operating the same
EMEMORY TECHNOLOGY INC48 citations93
US8355282B2Jan 15, 2013
Logic-based multiple time programming memory cell
EMEMORY TECHNOLOGY INC17 citations92
US6490196B1Dec 3, 2002
Method for operating a nonvolatile memory having embedded word lines
EMEMORY TECHNOLOGY INC17 citations92
US6448607B1Sep 10, 2002
Nonvolatile memory having embedded word lines
EMEMORY TECHNOLOGY INC42 citations92
US10181357B2Jan 15, 2019
Code generating apparatus and one time programming block
EMEMORY TECHNOLOGY INC6 citations84
US8344445B2Jan 1, 2013
Non-volatile semiconductor memory cell with dual functions
EMEMORY TECHNOLOGY INC18 citations84
US6677198B2Jan 13, 2004
Structure of a low-voltage channel write/erase flash memory cell and fabricating method thereof
EMEMORY TECHNOLOGY INC14 citations84
US6952369B2Oct 4, 2005
Method for operating a NAND-array memory module composed of P-type memory cells
EMEMORY TECHNOLOGY INC7 citations74
US6885587B2Apr 26, 2005
Single poly embedded EPROM
EMEMORY TECHNOLOGY INC9 citations74
US6882574B2Apr 19, 2005
Single poly UV-erasable programmable read only memory
EMEMORY TECHNOLOGY INC11 citations74
US6750504B2Jun 15, 2004
Low voltage single-poly flash memory cell and array
EMEMORY TECHNOLOGY INC9 citations74
US6710397B1Mar 23, 2004
Nonvolatile semiconductor memory device having divided bit lines
EMEMORY TECHNOLOGY INC7 citations74
US6534817B2Mar 18, 2003
Contactless channel write/erase flash memory cell and its fabrication method
EMEMORY TECHNOLOGY INC6 citations74
US10020268B2Jul 10, 2018
Random number generator device and control method thereof
EMEMORY TECHNOLOGY INC5 citations73
US9638549B2May 2, 2017
Integrated capacitance sensing module and associated system
EMEMORY TECHNOLOGY INC3 citations70
US8604538B2Dec 10, 2013
Non-volatile semiconductor memory device with intrinsic charge trapping layer
EMEMORY TECHNOLOGY INC1 citations63
US10476680B2Nov 12, 2019
Electronic device with self-protection and anti-cloning capabilities and related method
EMEMORY TECHNOLOGY INC1 citations62
POWERCHIP SEMICONDUCTOR CORP
9 patentsUS7436028B2Oct 14, 2008
One-time programmable read only memory and operating method thereof
POWERCHIP SEMICONDUCTOR CORP20 citations92
US6898126B1May 24, 2005
Method of programming a flash memory through boosting a voltage level of a source line
POWERCHIP SEMICONDUCTOR CORP39 citations92
US7397080B2Jul 8, 2008
Non-volatile memory
POWERCHIP SEMICONDUCTOR CORP9 citations84
US7291882B2Nov 6, 2007
Programmable and erasable digital switch device and fabrication method and operating method thereof
POWERCHIP SEMICONDUCTOR CORP8 citations74
US7154142B2Dec 26, 2006
Non-volatile memory device and manufacturing method and operating method thereof
POWERCHIP SEMICONDUCTOR CORP9 citations74
US6908818B2Jun 21, 2005
Contactless channel write/erase flash memory cell and its fabrication method
POWERCHIP SEMICONDUCTOR CORP7 citations74
US7491607B2Feb 17, 2009
Method of fabricating flash memory cell
POWERCHIP SEMICONDUCTOR CORP3 citations63
US7462902B2Dec 9, 2008
Nonvolatile memory
POWERCHIP SEMICONDUCTOR CORP2 citations63
US7391078B2Jun 24, 2008
Non-volatile memory and manufacturing and operating method thereof
POWERCHIP SEMICONDUCTOR CORP5 citations63
LU HAU-YAN
4 patentsUS8174063B2May 8, 2012
Non-volatile semiconductor memory device with intrinsic charge trapping layer
LU HAU-YAN67 citations97
US8638589B2Jan 28, 2014
Operating method for non-volatile memory unit
LU HAU-YAN12 citations84
US8724363B2May 13, 2014
Anti-fuse memory ultilizing a coupling channel and operating method thereof
LU HAU-YAN5 citations73
US8390056B2Mar 5, 2013
Non-volatile semiconductor memory device with intrinsic charge trapping layer
LU HAU-YAN3 citations62
PUFSECURITY CORP
3 patentsUS11381394B2Jul 5, 2022
High speed encryption key generating engine
PUFSECURITY CORP2 citations73
US12113895B2Oct 8, 2024
Key management system providing secure management of cryptographic keys, and methods of operating the same
PUFSECURITY CORP0 citations62
US11876899B2Jan 16, 2024
Random number generator and method of generating output random number
PUFSECURITY CORP0 citations62
HSU TE-HSUN
1 patentCHEN WEI-REN
1 patentMIIDA TAKASHI
1 patentCHING WEN-HAO
1 patentWU MENG-YI
1 patentYANG CHING-SUNG
1 patentShowing the top 50 of 69 patents by PatentIndex Score.