Inventor

RYU SEI-HYUNG

US107 patents

⚠️ This page may combine multiple inventors who share the name “RYU SEI-HYUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RYU SEI-HYUNG

CREE INC

Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same

Semiconductor devices including schottky diodes with controlled breakdown

Methods of processing semiconductor wafers having silicon carbide power devices thereon

Silicon carbide power devices with self-aligned source and well regions

Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors

Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same

Multiple floating guard ring edge termination for silicon carbide devices

Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel

Silicon carbide inversion channel mosfets

Methods of fabricating silicon carbide inversion channel devices without the need to utilize P-type implantation

Methods of fabricating silicon carbide devices with hybrid well regions

Self-aligned bipolar junction silicon carbide transistors

Methods of fabricating vertical JFET limited silicon carbide metal-oxide semiconductor field effect transistors

Large area silicon carbide devices and manufacturing methods therefor

High power insulated gate bipolar transistors

High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities

High voltage silicon carbide devices having bi-directional blocking capabilities

Large area silicon carbide devices

Power switching semiconductor devices including rectifying junction-shunts

Silicon carbide bipolar junction transistors having a silicon carbide passivation layer on the base region thereof

Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same

Methods of fabricating silicon carbide devices including multiple floating guard ring edge termination

Manufacturing methods for large area silicon carbide devices

Wide bandgap semiconductor device

Schottky diode

PECVD protective layers for semiconductor devices

RYU SEI-HYUNG

Vertical JFET limited silicon carbide metal-oxide semiconductor field effect transistors

Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection

High voltage insulated gate bipolar transistors with minority carrier diverter

Field effect transistor devices with low source resistance

Field effect transistor devices with low source resistance

Monolithic bidirectional silicon carbide switching devices

Monolithic high voltage switching devices

Edge termination structures for silicon carbide devices

ZHANG QINGCHUN

Junction barrier Schottky diodes with current surge capability

High power insulated gate bipolar transistors

Junction Barrier Schottky diodes with current surge capability

Semiconductor devices including Schottky diodes having doped regions arranged as islands and methods of fabricating same

Power switching devices having controllable surge current capabilities

Transistors with semiconductor interconnection layers and semiconductor channel layers of different semiconductor materials

WOLFSPEED INC

Gate trench power semiconductor devices having improved deep shield connection patterns

Gate trench power semiconductor devices having improved deep shield connection patterns

Semiconductor devices having gate resistors with low variation in resistance values

Semiconductor device with improved short circuit withstand time and methods for manufacturing the same

HENNING JASON PATRICK

Schottky diode

Power module for supporting high current densities

Schottky diode employing recesses for elements of junction barrier array

CREE RESEARCH INC

Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices

HENNING JASON

Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same

HANEY SARAH KAY

Bidirectional silicon carbide transient voltage suppression devices